Abstract: According to an embodiment of the present invention, provided is a method of synthesizing nanowires that includes the following steps of: disposing a covering inside a reaction furnace such that the covering is spaced apart by a predetermined gap from a substrate which is provided for synthesis of nanowires; heating the reaction furnace; and synthesizing nanowires by allowing a source gas to be deposited on the substrate while flowing through the gap between the substrate and the covering.

Abstract: According to an embodiment of the invention, provided is a method of forming a C/SiC functionally graded coating. In the embodiment, in a step of forming the C/SiC functionally graded coating, a reaction condition is controlled by feeding a larger amount of the oxygen gas at an early stage than a latter stage of the reaction so that a pure carbon film is formed on a surface of the substrate and then gradually decreasing the amount of the oxygen gas so that a SiC film having a higher concentration with an increasing distance from the surface of the substrate is formed.

Abstract: According to an embodiment of the present invention, provided is a method of synthesizing nanowires that includes the following steps of: disposing a covering inside a reaction furnace such that the covering is spaced apart by a predetermined gap from a substrate which is provided for synthesis of nanowires; heating the reaction furnace; and synthesizing nanowires by allowing a source gas to be deposited on the substrate while flowing through the gap between the substrate and the covering.