Patents by Inventor Yoram Uziel
Yoram Uziel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967535Abstract: A product includes a semiconductor substrate, with at least first and second thin-film layers disposed on the substrate and patterned to define a matrix of dies, which are separated by scribe lines and contain active areas circumscribed by the scribe lines. A plurality of overlay targets are formed in the first and second thin-film layers within each of the active areas, each overlay target having dimensions no greater than 10 ?m×10 ?m in a plane parallel to the substrate. The plurality of overlay targets include a first linear grating formed in the first thin-film layer and having a first grating vector, and a second linear grating formed in the second thin-film layer, in proximity to the first linear grating, and having a second grating vector parallel to the first grating vector.Type: GrantFiled: November 4, 2021Date of Patent: April 23, 2024Assignee: KLA CORPORATIONInventors: Amnon Manassen, Vladimir Levinski, Ido Dolev, Yoram Uziel
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Patent number: 11933717Abstract: A metrology system may include a metrology tool to selectively perform metrology measurements in a static mode in which one or more metrology targets on a sample are stationary during a measurement or a scanning mode in which one or more metrology targets are in motion during a measurement, and a controller communicatively coupled to the translation stage and at least one of the one or more detectors. The controller may receive locations of metrology targets on the sample to be inspected, designate the metrology targets for inspection with the static mode or the scanning mode, direct the metrology tool to perform metrology measurements on the metrology targets in the static mode or the scanning mode based on the designation, and generate metrology data for the sample based on the metrology measurements on the metrology targets.Type: GrantFiled: September 27, 2019Date of Patent: March 19, 2024Assignee: KLA CorporationInventors: Andrew V. Hill, Amnon Manassen, Yoram Uziel, Yossi Simon, Gilad Laredo
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Patent number: 11899375Abstract: A multi-column metrology tool may include two or more measurement columns distributed along a column direction, where the two or more measurement columns simultaneously probe two or more measurement regions on a sample including metrology targets. A measurement column may include an illumination sub-system to direct illumination to the sample, a collection sub-system including a collection lens to collect measurement signals from the sample and direct it to one or more detectors, and a column-positioning sub-system to adjust a position of the collection lens. A measurement region of a measurement column may be defined by a field of view of the collection lens and a range of the positioning system in the lateral plane. The tool may further include a sample-positioning sub-system to scan the sample along a scan path different than the column direction to position metrology targets within the measurement regions of the measurement columns for measurements.Type: GrantFiled: March 24, 2021Date of Patent: February 13, 2024Assignee: KLA CorporationInventors: Jonathan Madsen, Andrei V. Shchegrov, Amnon Manassen, Andrew V. Hill, Yossi Simon, Gilad Laredo, Yoram Uziel
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Publication number: 20240027919Abstract: A multi-column metrology tool may include two or more measurement columns distributed along a column direction, where the two or more measurement columns simultaneously probe two or more measurement regions on a sample including metrology targets. A measurement column may include an illumination sub-system to direct illumination to the sample, a collection sub-system including a collection lens to collect measurement signals from the sample and direct it to one or more detectors, and a column-positioning sub-system to adjust a position of the collection lens. A measurement region of a measurement column may be defined by a field of view of the collection lens and a range of the positioning system in the lateral plane. The tool may further include a sample-positioning sub-system to scan the sample along a scan path different than the column direction to position metrology targets within the measurement regions of the measurement columns for measurements.Type: ApplicationFiled: October 4, 2023Publication date: January 25, 2024Inventors: Jonathan Madsen, Andrei V. Shchegrov, Amnon Manassen, Andrew V. Hill, Yossi Simon, Gilad Laredo, Yoram Uziel
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Publication number: 20230400780Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.Type: ApplicationFiled: February 27, 2023Publication date: December 14, 2023Inventors: Amnon Manassen, Andrew V. Hill, Yonatan Vaknin, Yossi Simon, Daria Negri, Vladimir Levinski, Yuri Paskover, Anna Golotsvan, Nachshon Rothman, Nireekshan K. Reddy, Nir BenDavid, Avi Abramov, Dror Yaacov, Yoram Uziel, Nadav Gutman
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Publication number: 20230359129Abstract: A multi-column metrology tool may include two or more measurement columns distributed along a column direction, where the two or more measurement columns simultaneously probe two or more measurement regions on a sample including metrology targets. A measurement column may include an illumination sub-system to direct illumination to the sample, a collection sub-system including a collection lens to collect measurement signals from the sample and direct it to one or more detectors, and a column-positioning sub-system to adjust a position of the collection lens. A measurement region of a measurement column may be defined by a field of view of the collection lens and a range of the positioning system in the lateral plane. The tool may further include a sample-positioning sub-system to scan the sample along a scan path different than the column direction to position metrology targets within the measurement regions of the measurement columns for measurements.Type: ApplicationFiled: March 24, 2021Publication date: November 9, 2023Inventors: Jonathan Madsen, Andrei V. Shchegrov, Amnon Manassen, Andrew V. Hill, Yossi Simon, Gilad Laredo, Yoram Uziel
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Publication number: 20230324809Abstract: A metrology system includes an imaging system. The imaging system may include an objective lens. The metrology system may include one or more detectors. The metrology system may include an objective positioning stage structurally coupled to the objective lens and configured to adjust a focal plane of at least one of the one or more detectors via movement along an optical axis of the metrology system. The metrology system may include one or more proximity sensors configured to measure lateral positions of a stage element as the objective positioning stage moves along the optical axis. The metrology system may be configured to determine a metrology measurement associated with a target on a sample using the images and lateral positions of the stage element when implementing a metrology recipe.Type: ApplicationFiled: April 7, 2022Publication date: October 12, 2023Inventors: Yoram Uziel, Ariel Hildesheim, Alexander Novikov, Amnon Manassen, Etay Lavert, Ohad Bachar, Yoav Grauer
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Publication number: 20230314344Abstract: A system includes an illumination source configured to generate an illumination beam, and a collection sub-system that includes an objective lens, one or more detectors located at a collection pupil plane, a light modulator, and a controller. The light modulator is configured to direct one or more selected portions of measurement light to the one or more detectors. The controller includes one or more processors configured to execute program instructions causing the one or more processors to execute a metrology recipe by: receiving detection signals from the one or more detectors, wherein the detection signals are associated with the one or more selected portions of the measurement light directed to the one or more detectors; and generating an overlay measurement associated with at least two layers of a sample based on the detection signals.Type: ApplicationFiled: March 30, 2022Publication date: October 5, 2023Inventors: Yuri Paskover, Itay Gdor, Yuval Lubashevsky, Vladimir Levinski, Alexander Volfman, Yoram Uziel, Yevgeniy Men
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Publication number: 20230264234Abstract: A cleaning assembly is disclosed. The cleaning assembly includes a substrate. One or more patterns are formed on a bottom side of the substrate. One or more structures within the one or more patterns attract one or more particles from a chuck via at least one of electrostatic attraction or mechanical trapping when the substrate is positioned on the chuck.Type: ApplicationFiled: May 1, 2023Publication date: August 24, 2023Inventors: Mor Azaria, Giampietro Bieli, Shai Mark, Adi Pahima, Yoram Uziel
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Patent number: 11713959Abstract: An interferometric overlay tool may include an interferometer and a controller. The interferometer may include one or more beamsplitters to split illumination including one or more wavelengths into a probe beam along a probe path and a reference beam along a reference path, one or more illumination optics to illuminate a grating-over-grating structure with the probe beam, one or more collection optics to collect a measurement beam from the grating-over-grating structure, one or more beam combiners to combine the measurement beam and the reference beam as an interference beam, and a variable phase delay configured to vary an optical path difference (OPD) in the interferometer. The controller may receive one or more interference signals representative of interferometric phase data associated with a plurality of OPD values and the one or more wavelengths from a detector and determine an overlay error of the grating-over-grating structure based on the interferometric phase data.Type: GrantFiled: March 17, 2021Date of Patent: August 1, 2023Assignee: KLA CorporationInventors: Andrei V. Shchegrov, Ido Dolev, Yoram Uziel, Amnon Manassen
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Patent number: 11644419Abstract: A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of infrared wavelengths, and based on the measured spectral properties, computing a complex refractive index of the patterned polymer layer.Type: GrantFiled: January 28, 2021Date of Patent: May 9, 2023Assignee: KLA CorporationInventors: Roie Volkovich, Liran Yerushalmi, Amnon Manassen, Yoram Uziel
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Patent number: 11638938Abstract: A cleaning assembly is disclosed. The cleaning assembly includes a substrate. One or more patterns are formed on a bottom side of the substrate. One or more structures within the one or more patterns attract one or more particles from a chuck via at least one of electrostatic attraction or mechanical trapping when the substrate is positioned on the chuck.Type: GrantFiled: November 13, 2019Date of Patent: May 2, 2023Assignee: KLA CorporationInventors: Mor Azaria, Giampietro Bieli, Shai Mark, Adi Pahima, Yoram Uziel
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Patent number: 11637030Abstract: A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.Type: GrantFiled: June 12, 2020Date of Patent: April 25, 2023Assignee: KLA CorporationInventors: Yoram Uziel, Ulrich Pohlmann, Frank Laske, Nadav Gutman, Ariel Hildesheim, Aviv Balan
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Patent number: 11607716Abstract: A cleaning assembly may include a chuck. The cleaning assembly may include a plurality of lift pins positioned proximate to the chuck. The plurality of lift pins may be configured to engage a cleaning substrate and translate the cleaning substrate to allow the cleaning substrate to capture one or more particles from the surface of the chuck via at least one of electrostatic attraction or mechanical trapping when the cleaning substrate is positioned in the second position. The cleaning assembly may include a replaceable top skin coupled to the chuck and configured to capture the one or more particles.Type: GrantFiled: September 15, 2020Date of Patent: March 21, 2023Assignee: KLA CorporationInventors: Shai Mark, Mor Azaria, Yoram Uziel, Giampietro Bieli, Adi Pahima
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Publication number: 20230068016Abstract: A system and method for generating an angular calibration factor (ACF) for a metrology tool useful in a fabrication process, the method including providing the metrology tool, the metrology tool including a stage and a housing, measuring a rotational orientation of the stage relative to the housing and generating the ACF for the stage based at least partially on the rotational orientation.Type: ApplicationFiled: August 26, 2021Publication date: March 2, 2023Inventors: Alexander Novikov, Amnon Manassen, Ido Dolev, Yuri Paskover, Nir Ben David, Yoel Feler, Yoram Uziel
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Patent number: 11592755Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.Type: GrantFiled: March 31, 2021Date of Patent: February 28, 2023Assignee: KLA CorporationInventors: Amnon Manassen, Andrew Hill, Yonatan Vaknin, Yossi Simon, Daria Negri, Vladimir Levinski, Yuri Paskover, Anna Golotsvan, Nachshon Rothman, Nireekshan K. Reddy, Nir BenDavid, Avi Abramov, Dror Yaacov, Yoram Uziel, Nadav Gutman
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Publication number: 20220344218Abstract: A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.Type: ApplicationFiled: September 8, 2021Publication date: October 27, 2022Inventors: Liran Yerushalmi, Daria Negri, Ohad Bachar, Yossi Simon, Amnon Manassen, Nir Ben David, Yoram Uziel, Etay Lavert
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Publication number: 20220328365Abstract: A product includes a semiconductor substrate, with at least first and second thin-film layers disposed on the substrate and patterned to define a matrix of dies, which are separated by scribe lines and contain active areas circumscribed by the scribe lines. A plurality of overlay targets are formed in the first and second thin-film layers within each of the active areas, each overlay target having dimensions no greater than 10 ?m×10 ?m in a plane parallel to the substrate. The plurality of overlay targets include a first linear grating formed in the first thin-film layer and having a first grating vector, and a second linear grating formed in the second thin-film layer, in proximity to the first linear grating, and having a second grating vector parallel to the first grating vector.Type: ApplicationFiled: November 4, 2021Publication date: October 13, 2022Inventors: Amnon Manassen, Vladimir Levinski, Ido Dolev, Yoram Uziel
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Publication number: 20220317577Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.Type: ApplicationFiled: March 31, 2021Publication date: October 6, 2022Inventors: Amnon Manassen, Andrew Hill, Yonatan Vaknin, Yossi Simon, Daria Negri, Vladimir Levinski, Yuri Paskover, Anna Golotsvan, Nachshon Rothman, Nireekshan K. Reddy, Nir BenDavid, Avi Abramov, Dror Yaacov, Yoram Uziel, Nadav Gutman
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Publication number: 20220299308Abstract: An interferometric overlay tool may include an interferometer and a controller. The interferometer may include one or more beamsplitters to split illumination including one or more wavelengths into a probe beam along a probe path and a reference beam along a reference path, one or more illumination optics to illuminate a grating-over-grating structure with the probe beam, one or more collection optics to collect a measurement beam from the grating-over-grating structure, one or more beam combiners to combine the measurement beam and the reference beam as an interference beam, and a variable phase delay configured to vary an optical path difference (OPD) in the interferometer. The controller may receive one or more interference signals representative of interferometric phase data associated with a plurality of OPD values and the one or more wavelengths from a detector and determine an overlay error of the grating-over-grating structure based on the interferometric phase data.Type: ApplicationFiled: March 17, 2021Publication date: September 22, 2022Inventors: Andrei V. Shchegrov, Ido Dolev, Yoram Uziel, Amnon Manassen