Patents by Inventor Yoriko TOMINAGA

Yoriko TOMINAGA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND SEMICONDUCTOR WAFER
    Publication number: 20190115434
    Abstract: Semiconductor devices each include: a semiconductor substrate that contains beta-gallium oxide and has a first conductivity type; a first semiconductor region that contains beta-gallium oxide, has the first conductivity type, and is provided on an upper side of the semiconductor substrate; a second semiconductor region that contains beta-gallium oxide, has a second conductivity type, and is provided on an upper side of a part of the first semiconductor region; and a third semiconductor region that contains beta-gallium oxide, has the first conductivity type, and is provided on an upper side of a part of the second semiconductor region. When the first conductivity type is an n-type and the second conductivity type is a p-type, the second semiconductor region further contains a band gap control element. The band gap control element is selected from a group of boron, aluminum, and indium.
    Type: Application
    Filed: October 15, 2018
    Publication date: April 18, 2019
    Applicants: Yazaki Corporation, National University Corporation Hiroshima University
    Inventors: Naotake SAKUMOTO, Yoshinori MATSUSHITA, Hiroki ISHIHARA, Tatsuo SUNAYAMA, Misako AIDA, Yoriko TOMINAGA, Dai AKASE