Patents by Inventor York C. Gerstenmaier

York C. Gerstenmaier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacture of a controllable power semiconductor element with buffer zone
    Patent number: 5506153
    Abstract: Controllable power semiconductor components such as, for example, IGBTs and thyristors are provided, which, compared to known components, have a relatively lightly doped n-buffer zone, a relatively flat p-emitter, and an n-base having a comparatively long charge carrier life expectancy. An advantage is achieved that the controllable power semiconductor component has a temperature-independent tail current, despite a low on-state dc resistance and a high blocking voltage.
    Type: Grant
    Filed: June 13, 1995
    Date of Patent: April 9, 1996
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heinrich Brunner, York C. Gerstenmaier
  • Controllable power semiconductor element with buffer zone and method for the manufacture thereof
    Patent number: 5466951
    Abstract: Controllable power semiconductor components such as, for example, IGBTs and thyristors are provided, which, compared to known components, have a relatively lightly doped n-buffer zone, a relatively flat p-emitter, and an n-base having a comparatively long charge carrier life expectancy. An advantage is achieved that the controllable power semiconductor component has a temperature-independent tail current, despite a low on-state dc resistance and a high blocking voltage.
    Type: Grant
    Filed: November 22, 1994
    Date of Patent: November 14, 1995
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heinrich Brunner, York C. Gerstenmaier