Abstract: An energy-dispersive x-ray spectroscopy (EDX) sensing unit, the EDX sensing unit include a protective unit and an x-ray sensor that includes one or more sensing regions. The protective unit is configured to (i) introduce a change in one or more properties of electrons emitted from a sample, thereby preventing the electrons emitted from the sample from reaching the one or more sensing regions, the electrons are emitted from the sample due to an illuminating of the sample by a primary electron beam, and (ii) increase a safety of operation of the EDX sensing unit. The x-ray sensor is configured to (i) receive, by the one or more sensing regions, x-ray photons emitted from the sample due to the illuminating of the sample, and (ii) generate detection signals indicative of the x-ray photons.

Abstract: A method, a non-transitory computer readable medium and a device. The method may include (a) introducing a voltage difference between an absolute value of a negative pole of the electrostatic chuck and an absolute value of a positive pole of the electrostatic chuck, the introducing occurs while the wafer is supported by the electrostatic chuck and is contacted by one or more conductive contact pins of the electrostatic chuck; (b) monitoring, by an electrostatic sensor that comprises a sensing element, a charge at a point of measurement located at a front side of the wafer, at different points of time that follow a start of the introducing of the voltage difference, to provide monitoring results; and (c) determining an electrical parameter of the contact between the wafer and the electrostatic chuck, based on the monitoring results.

Abstract: A method, a non-transitory computer readable medium and a device. The method may include (a) introducing a voltage difference between an absolute value of a negative pole of the electrostatic chuck and an absolute value of a positive pole of the electrostatic chuck, the introducing occurs while the wafer is supported by the electrostatic chuck and is contacted by one or more conductive contact pins of the electrostatic chuck; (b) monitoring, by an electrostatic sensor that comprises a sensing element, a charge at a point of measurement located at a front side of the wafer, at different points of time that follow a start of the introducing of the voltage difference, to provide monitoring results; and (c) determining an electrical parameter of the contact between the wafer and the electrostatic chuck, based on the monitoring results.

Abstract: A method, a non-transitory computer readable medium and a detection system for detecting an electric arc hazard related to a wafer. The detection system may include a measurement unit, an electrode and a processing unit. The measurement unit may be configured to provide a measurement result by measuring an electrical parameter of the electrode during a test period, while the wafer may be moved in relation to the electrode, and while a certain electrical field may be formed between the electrode and the wafer; wherein the certain electrical field induces detached ends of partially detached conductive elements of the wafer to move away from the wafer. The processing unit may be configured to determine an existence of the electric arc hazard based on the measurement result.

Abstract: A method, a non-transitory computer readable medium and a system for compensating for an electromagnetic interference induced deviation of an electron beam. The method may include obtaining measurement information about a magnetic field within an electron beam tool, the measurement information is generated by at least one planar Hall Effect magnetic sensor that is located within the electron beam tool; wherein the at least one planar Hall Effect magnetic sensor comprises at least one magnetometer integrated with at least one magnetic flux concentrator; estimating the electromagnetic interference induced deviation of the electron beam, the estimating is based on the magnetic field; and setting a trajectory of the electron beam to compensate for the electromagnetic interference induced deviation of the electron beam.

Abstract: A method, a non-transitory computer readable medium and a detection system for detecting an electric arc hazard related to a wafer. The detection system may include a measurement unit, an electrode and a processing unit. The measurement unit may be configured to provide a measurement result by measuring an electrical parameter of the electrode during a test period, while the wafer may be moved in relation to the electrode, and while a certain electrical field may be formed between the electrode and the wafer; wherein the certain electrical field induces detached ends of partially detached conductive elements of the wafer to move away from the wafer. The processing unit may be configured to determine an existence of the electric arc hazard based on the measurement result.

Abstract: A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.

Abstract: A high voltage inspection system that includes a vacuum chamber; electron optics that is configured to direct an electron beam towards an upper surface of a substrate; a substrate support module that comprises a chuck and a housing; wherein the chuck is configured to support a substrate; wherein the housing is configured to surround the substrate without masking the electron beam, when the substrate is positioned on the chuck during a first operational mode of the high voltage inspection system; and wherein the substrate, the chuck and the housing are configured to (a) receive a high voltage bias signal of a high voltage level that exceeds ten thousand volts, and (b) to maintain at substantially the high voltage level during the first operational mode of the high voltage inspection system.

Abstract: The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.

Abstract: The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.