Patents by Inventor Yosef Y. Shacham

Yosef Y. Shacham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5240497
    Abstract: Alkali-free layers of pure metals such as copper, nickel and cobalt were deposited on noble metal or noble metal sensitized substrates by electroless deposition using pure quaternary ammonium hydroxides or quaternary phosphonium hydroxides to generate the hydroxyl ion (OH.sup.-) needed to produce electrons for the metal reduction.Using the new alkaline-free electroless compositions, uniform, continuous and reproducible metal layers were selectively deposited with excellent electrical properties. With the improved compositions and process, nanosize copper lines having widths in the range of 100 to 500 nm were prepared.
    Type: Grant
    Filed: October 8, 1991
    Date of Patent: August 31, 1993
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Yosef Y. Shacham, Roman Bielski
  • Patent number: 5070383
    Abstract: A memory matrix comprises a plurality of word lines, a plurality of bit lines, and a stacked diode and voltage-variable resistor structure interconnecting bit lines to word lines. The stacked diode and voltage-variable resistor structure includes a doped region in a semiconductor substrate defining a work line, a doped polycrystalline silicon layer over said word line and forming a p-n junction therewith, and an amorphized region in the doped polycrystalline silicon layer having increased resistance over the non-amorphized portion of the doped polycrystalline silicon layer. A contact is made to the amorphized polycrystalline silicon material which preferably includes a titanium-tungsten barrier layer and an aluminum layer over the barrier layer.
    Type: Grant
    Filed: January 10, 1989
    Date of Patent: December 3, 1991
    Assignee: Zoran Corporation
    Inventors: Alexander B. Sinar, Levy Gerzberg, Yosef Y. Shacham, Ilan A. Blech, Eric R. Sirkin
  • Patent number: 4882611
    Abstract: A voltage-programmable device in which the programming voltage V.sub.p and the "off" resistance R.sub.i are separately controlled. The device includes a body of semiconductor material having a doped region therein, and an amorphized layer in the doped region and abutting a surface, and a surface layer in the amorphized layer with the surface layer having a resistivity higher than the resistivity of the amorphized layer prior ot programming of the device. The surface layer has a miniscule thickness (on the order of 50-150 Angstroms) and does not affect the programming of the device. Moreover, the final resistance of the programmed device is not significantly affected by the presence of the first layer. The amorphized layer is formed by ion implantation, and the or by oxygen plasma treatment.
    Type: Grant
    Filed: July 21, 1988
    Date of Patent: November 21, 1989
    Assignee: Zoran Corporation
    Inventors: Ilan A. Blech, Levy Gerzberg, Yosef Y. Shacham, Alexander Sinar, Eric R. Sirkin
  • Patent number: 4845045
    Abstract: An electrically programmable element is fabricated in a P-N junction isolated region of a semiconductor body by first extending the depth of the region in the body by introducing dopants through the region into the body by ion implantation or by diffusion and drive-in, and thereafter forming an amorphotized layer in the first region overlying the extended portion. The increased depth of the first region provided by the second region prevents damage to the P-N junction between the semiconductor body and the first region during formation of the amorphotized layer.
    Type: Grant
    Filed: September 15, 1988
    Date of Patent: July 4, 1989
    Assignee: Zoran Corporation
    Inventors: Yosef Y. Shacham, Alexander B. Sinar, Eric R. Sirkin, Ilan A. Blech