Abstract: A heating apparatus 2 comprises a housing 20; a flat heating chamber 4 which is provided in the housing 2 and adapted to heat a wafer W used as a substrate, with one side of the heating chamber 4 opening for carrying in and carrying out the wafer; and a heating plates 44, 45 provided in the heating chamber 4 such that the wafer W can be heated from both above and below. A cooling plate 3 is provided in the housing 20 located in the vicinity of the opening of the heating chamber 4, for cooling the wafer W after being heated by the heating plates 44, 45. Additionally, a carrying means is provided in the housing 20 for carrying the wafer W between an upper position of the cooling plate 3 and the interior of the heating chamber 4 such that a heat treatment for the wafer W can be performed with the wafer W being held in the heating chamber 4.