Abstract: A method of fabricating a grayscale mask includes preparing a silicon wafer; depositing a layer of Si3N4 directly on the silicon wafer; implanting H+ ions into the silicon wafer to form a defect layer; depositing a first layer of SiOxNy directly on the Si3N4 layer; depositing a layer of SRO directly on the first layer of SiOxNy; patterning and etching the SRO layer to form a microlens array in the SRO layer; depositing a second layer of SiOxNy on the SRO microlens array; CMP to planarize the second layer of SiOxNy; bonding and cleaving the planarized SiOxNy to a quartz plate to form a graymask reticle; etching to remove silicon from the bonded structure; etching to remove SiOxNy and Si3N4 from the bonded structure; and cleaning and drying the graymask reticle.