Patents by Inventor Yoshitake Hana

Yoshitake Hana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6336979
    Abstract: Wear resistant copper or a wear resistant copper base alloy having formed on the outermost surface thereof an oxide layer having a thickness of 10-1000 nm and a layer of an intermetallic compound primarily comprising Cu—Sn having a thickness of 0.1-10 &mgr;m under the oxide film layer is provided; a method of preparing the above-described wear resistant copper or copper base alloy by coating base material copper or a copper base alloy with Sn, preferably performing reflow treatment and then conducting heat treatment is provided; and an electrical part comprising the above-described wear resistant copper or copper base alloy is provided. A terminal made of the alloy according to the present invention which has an appropriate oxide film layer by performing heat treatment can greatly decrease a terminal-insertion force compared with that made of an ordinary copper base alloy which is not subjected to the heat treatment.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: January 8, 2002
    Assignees: Dowa Mining Co., Ltd., Yazaki Corporation
    Inventors: Akira Sugawara, Yoshitake Hana, Takayoshi Endo
  • Patent number: 6312762
    Abstract: A process for the production of copper or a copper base alloy that provides a surface having improved characteristics suitable for the production of a connector or a charging-socket of an electric automobile by having a decreased coefficient of friction on the surface and improved resistance to abrasion. The process comprises coating copper or a copper alloy with Sn, followed by heat treating the resulting Sn-plated copper or copper base in an atmosphere having an oxygen content of no more than 5%, thereby forming on an outermost surface thereof an oxide film and beneath the surface a layer of an intermetallic compound mainly comprising Cu—Sn.
    Type: Grant
    Filed: February 2, 2000
    Date of Patent: November 6, 2001
    Assignees: Dowa Mining Co., Ltd., Yazaki Corporation
    Inventors: Akira Sugawara, Yoshitake Hana, Takayoshi Endo
  • Patent number: 6254702
    Abstract: A copper alloy for terminals of the Cu—Ni—Sn—P system or Cu—Ni—Sn—P—Zn system and that has a tensile strength of at least 500 N/mm2, a spring limit of at least 400 N/mm2, a stress relaxation of no more than 10%, a conductivity of at least 30% IACS and a bending workability in terms of a R/t ratio of no more than 2. The spring portion or the entire part of such terminals are produced from the copper alloy, and have an initial insertion/extraction force of 1.5 N to 30 N and a resistance of no more than 3 m&OHgr; at low voltage and low current as initial performance. The terminals experience not more than 20% stress relaxation.
    Type: Grant
    Filed: August 24, 1999
    Date of Patent: July 3, 2001
    Assignees: Dowa Mining Co., Ltd., Yazaki Corporation
    Inventors: Yoshitake Hana, Akira Sugawara, Takayoshi Endo
  • Patent number: 6180174
    Abstract: The invention provides a process for producing a coated Cu alloy having a surface which has a low coefficient of friction and a high resistance to abrasion and is suitable for fabricating connectors, charging-sockets of electric automobiles etc. The coated Cu alloy is produced by coating the surface of a copper alloy with Sn and heat treating the coated Cu alloy at a temperature in the range of 100-450° C. for 0.5-24 hours. The Cu alloy which is coated with Sn consists of 1-41 wt % Zn with the balance being Cu and incidental impurities. By using the coated Cu alloy, the force of insertion, resistance to abrasion and resistance to corrosion of connectors can be significantly improved.
    Type: Grant
    Filed: November 2, 1999
    Date of Patent: January 30, 2001
    Assignees: Dowa Mining Co., Ltd., Yazaki Corporation
    Inventors: Akira Sugawara, Yoshitake Hana, Takayoshi Endo, Osamu Sugiyama
  • Patent number: 6040067
    Abstract: The invention provides a coated Cu alloy and a process for producing the coated Cu alloy having a surface which has a low coefficient of friction and a high resistance to abrasion and is suitable for fabricating connectors, charging-sockets of electric automobiles etc. The coated Cu alloy is produced by coating the surface of a copper alloy with Sn and heat treating the coated Cu alloy at a temperature in the range of 100-450.degree. C. for 0.5-24 hours. The Cu alloy which is coated with Sn consists of 1-41 wt % Zn with the balance being Cu and incidental impurities. By using the coated Cu alloy, the force of insertion, resistance to abrasion and resistance to corrosion of connectors can be significantly improved.
    Type: Grant
    Filed: July 9, 1997
    Date of Patent: March 21, 2000
    Assignees: Dowa Mining Co., Ltd., Yazaki Corporation
    Inventors: Akira Sugawara, Yoshitake Hana, Takayoshi Endo, Osamu Sugiyama
  • Patent number: 5849424
    Abstract: A coated Cu alloy having a high hardness surface which contains intermetallic compounds consisting essentially of Cu and Sn is produced by coating the surface of a Cu alloy with Sn and heat treating the coated Cu alloy to form on the surface thereof a high hardness coating containing Cu--Sn intermetallic compound(s). The coated Cu alloy has improved resistance to abrasion and corrosion and good workability, which permits producing terminal connectors therefrom. The Cu alloy which is coated with Sn consists essentially of 0.01-15 wt % Ni, 0.1-10 wt % Sn, 0.005-0.5 wt % P, and optionally 0.01-40 wt % in total of one or two or more elements selected from the group consisting of Fe, Co, Zn, Ti, Mg, Zr, Ca, Si, Mn, Cd, Al, Pb, Be, Te, In, Ag, B, Y, La, Cr, Ce and Au, with the balance being Cu and incidental impurities.
    Type: Grant
    Filed: May 15, 1996
    Date of Patent: December 15, 1998
    Assignee: Dowa Mining Co., Ltd.
    Inventors: Akira Sugawara, Yoshitake Hana