Abstract: A negative electrode material for lithium ion batteries is obtained by a method which includes: mixing carbon particles (B) such as graphite particles, particles (A), such as Si particles, containing an element capable of occluding and releasing lithium ions, a carbon precursor such as sucrose, a carboxylic acid compound such as acetic acid, and a liquid medium such as water or isopropyl alcohol to prepare a slurry; drying and solidifying the slurry; and heat-treating the resulting solidified material to carbonize the carbon precursor. A lithium ion battery is obtained using this negative electrode material.

Abstract: A negative electrode material for lithium ion batteries is obtained by a method which includes: mixing carbon particles (B) such as graphite particles, particles (A), such as Si particles, containing an element capable of occluding and releasing lithium ions, a carbon precursor such as sucrose, a carboxylic acid compound such as acetic acid, and a liquid medium such as water or isopropyl alcohol to prepare a slurry; drying and solidifying the slurry; and heat-treating the resulting solidified material to carbonize the carbon precursor. A lithium ion battery is obtained using this negative electrode material.

Abstract: The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

Abstract: The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

Abstract: The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In2O3 crystal.

Abstract: The present invention provides a solar cell that is useful for industry and has high photoelectric conversion efficiency and a method of manufacturing the same. A solar cell according to an aspect of the invention includes: a substrate; a buffer layer that is formed on the substrate and is composed of a group-III nitride semiconductor; and a group-III nitride semiconductor layer (p-type layer/an n-type layer) that has a p-n junction therein and is formed on the buffer layer. At least one of the buffer layer and the group-III nitride semiconductor layer having the p-n junction therein has a compound semiconductor layer formed by a sputtering method.

Abstract: A solid electrolytic capacitor includes a valve acting metal having microfine pores, a dielectric film formed on a surface of the valve acting metal, and a solid electrolyte layer provided on the dielectric film, in which at least a portion of the solid electrolyte layer is of a lamellar structure. In particular, a solid electrolytic capacitor includes an electrically conducting polymer having a specified condensed ring structure containing (1) a solid electrolyte layer containing a sulfoquinone anion, and (2) a solid electrolyte layer containing an anthracenesulfonate ion and other anion.

Abstract: A solid electrolytic capacitor includes a valve acting metal having microfine pores, a dielectric film formed on a surface of the valve acting metal, and a solid electrolyte layer provided on the dielectric film, in which at least a portion of the solid electrolyte layer is of a lamellar structure. In particular, a solid electrolytic capacitor includes an electrically conducting polymer having a specified condensed ring structure containing (1) a solid electrolyte layer containing a sulfoquinone anion, and (2) a solid electrolyte layer containing an anthracenesulfonate ion and other anion.

Abstract: A solid electrolytic capacitor includes a valve acting metal having microfine pores, a dielectric film formed on a surface of the valve acting metal, and a solid electrolyte layer provided on the dielectric film, in which at least a portion of the solid electrolyte layer is of a lamellar structure. In particular, a solid electrolytic capacitor includes an electrically conducting polymer having a specified condensed ring structure containing (1) a solid electrolyte layer containing a sulfoquinone anion having a sulfo anion group and a quinone structure and other anion, and (2) a solid electrolyte layer containing an anthracenesulfonate ion and other anion.

Abstract: A solid electrolytic capacitor includes a valve acting metal having microfine pores, a dielectric film formed on a surface of the valve acting metal, and a solid electrolyte layer provided on the dielectric film, in which at least a portion of the solid electrolyte layer is of a lamellar structure. In particular, a solid electrolytic capacitor includes an electrically conducting polymer having a specified condensed ring structure containing (1) a solid electrolyte layer containing a sulfoquinone anion having a sulfo anion group and a quinone structure and other anion, and (2) a solid electrolyte layer containing an anthracenesulfonate ion and other anion.

Abstract: Disclosed are a solid electrolytic capacitor comprising a valve-acting metal, an oxide dielectric layer formed on a surface of the valve-acting metal and a solid electrolyte layer provided on the dielectric film layer, in which the electrically conducting polymer composition layer contains as a dopant at least one anion selected from (1) an alkoxy-substituted naphthalene monosulfonate anion, (2) a heterocyclic sulfonate anion, and (3) an anion of an aliphatic polycyclic compound or a combination thereof with another anion having a dopant ability and a method for producing such a solid electrolytic capacitor. The solid electrolytic capacitor of the invention is excellent in voltage resistance, high frequency property, tan &dgr;, leakage current, heat resistance (reflow property), etc.

Abstract: A solid electrolytic capacitor includes a valve acting metal having microfine pores, a dielectric film formed on a surface of the valve acting metal, and a solid electrolyte layer provided on the dielectric film, in which at least a portion of the solid electrolyte layer is of a lamellar structure. In particular, a solid electrolytic capacitor includes an electrically conducting polymer having a specified condensed ring structure containing (1) a solid electrolyte layer containing a sulfoquinone anion having a sulfo anion group and a quinone structure and other anion, and (2) a solid electrolyte layer containing an anthracenesulfonate ion and other anion.

Abstract: A solid electrolytic capacitor includes a valve acting metal having microfine pores, a dielectric film formed on a surface of the valve acting metal, and a solid electrolyte layer provided on the dielectric film, in which at least a portion of the solid electrolyte layer is of a lamellar structure. In particular, a solid electrolytic capacitor includes an electrically conducting polymer having a specified condensed ring structure containing (1) a solid electrolyte layer containing a sulfoquinone anion having a sulfo anion group and a quinone structure and other anion, and (2) a solid electrolyte layer containing an anthracenesulfonate ion and other anion.

Abstract: A solid electrolytic capacitor includes a valve acting metal having microfine pores, a dielectric film formed on a surface of the valve acting metal, and a solid electrolyte layer provided on the dielectric film, in which at least a portion of the solid electrolyte layer is of a lamellar structure. In particular, a solid electrolytic capacitor includes an electrically conducting polymer having a specified condensed ring structure containing (1) a solid electrolyte layer containing a sulfoquinone anion having a sulfo anion group and a quinone structure and other anion, and (2) a solid electrolyte layer containing an anthracenesulfonate ion and other anion.

Abstract: Disclosed are a solid electrolytic capacitor comprising a valve-acting metal, an oxide dielectric layer formed on a surface of the valve-acting metal and a solid electrolyte layer provided on the dielectric film layer, in which the electrically conducting polymer composition layer contains as a dopant at least one anion selected from (1) an alkoxy-substituted naphthalene monosulfonate anion, (2) a heterocyclic sulfonate anion, and (3) an anion of an aliphatic polycyclic compound or a combination thereof with another anion having a dopant ability and a method for producing such a solid electrolytic capacitor. The solid electrolytic capacitor of the invention is excellent in voltage resistance, high frequency property, tan &dgr;, leakage current, heat resistance (reflow property), etc.

Abstract: An antistatic agent comprising a water-soluble electroconductive polymer comprising at least a repeating unit having a sulfo group-containing isothianaphthenylene structure; a method for suppressing electrification of an article during the production or use of the article by forming an electroconductive film comprising the water-soluble electroconductive polymer on the article; an article of which electrification is suppressed by having an electroconductive film comprising the water-soluble conductive polymer on the article; and a method for observing or inspecting an article with suppressing electrification thereof during irradiation with charged particle beams by forming an electroconductive film comprising the water-soluble electroconductive polymer on the article. The electroconductive film retains the electrification-suppressing effect and removability stably even when subjected to a heat treatment or left to stand for a long period of time.

Abstract: Electroconductive polymers having a chemical structure represented by, for example, the formula (I) ##STR1## wherein R.sup.1 and R.sup.2 independently represent H, a C.sub.1 to C.sub.20 alkyl or alkoxy group, an amino group, a trihalomethyl group or a phenyl group, X represents S, O, Se, Te or NR.sub.3 R.sub.3 represents H, a C.sub.1 to C.sub.6 alkyl group or an aryl group, M represents a cation such as H.sup.+, an alkali metal ion or a quaternary ammonium ion, and m is 0.2 to 2 and a process for producing the polymer.

Abstract: Electroconductive polymers having a chemical structure represented by, for example, the formula (I) ##STR1## wherein R.sup.1 and R.sup.2 independently represent H, a C.sub.1 to C.sub.20 alkyl or alkoxy group, an amino group, a trihalomethyl group or a phenyl group, X represents S, O, Se, Te or NR.sub.3 R.sub.3 represents H, a C.sub.1 to C.sub.6 alkyl group or an aryl group, M represents a cation such as M.sup.+, an alkali metal ion or a quaternary ammonium ion, and m is 0.2 to 2 and a process for producing the polymer.

Abstract: An electroconductive polymer comprising a repeating unit having a chemical structure represented by formula (I): ##STR1## or, formula (II): ##STR2## as defined herein, and a process for producing the same.

Abstract: Electrification is suppressed with a water-soluble electrification-suppressing film having an electron conductivity and comprising a polymer resin. A high electrification-suppressing effect which is also high in vacuum can be easily obtained by using the electrification-suppressing film with less contamination.