Patents by Inventor Yoshiaki Kageshima
Yoshiaki Kageshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10865500Abstract: A SiC epitaxial wafer having a SiC epitaxial layer formed on a SiC single crystal substrate having an offset angle of 4 degrees or less in a<11-20>direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.Type: GrantFiled: February 16, 2016Date of Patent: December 15, 2020Assignee: SHOWA DENKO K.K.Inventors: Jun Norimatsu, Akira Miyasaka, Yoshiaki Kageshima, Koji Kamei, Daisuke Muto
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Patent number: 10494737Abstract: The SiC epitaxial wafer-producing apparatus according to the invention includes a mounting plate having a concave accommodation portion, a satellite that is provided in the concave accommodation portion and has an upper surface on which a SiC substrate is placed, and a carbon member that is provided in the concave accommodation portion at a position which is lower than the SiC substrate and does not come into contact with the SiC substrate.Type: GrantFiled: October 30, 2014Date of Patent: December 3, 2019Assignee: SHOWA DENKO K.K.Inventors: Jun Norimatsu, Akira Miyasaka, Yoshiaki Kageshima
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Patent number: 10176987Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).Type: GrantFiled: May 4, 2017Date of Patent: January 8, 2019Assignee: SHOWA DENKO K.K.Inventors: Akira Miyasaka, Yutaka Tajima, Yoshiaki Kageshima, Daisuke Muto, Kenji Momose
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Publication number: 20180016706Abstract: An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.Type: ApplicationFiled: February 16, 2016Publication date: January 18, 2018Applicant: SHOWA DENKO K.K.Inventors: Jun NORIMATSU, Akira MIYASAKA, Yoshiaki KAGESHIMA, Koji KAMEI, Daisuke MUTO
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Patent number: 9768047Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.Type: GrantFiled: September 8, 2016Date of Patent: September 19, 2017Assignee: SHOWA DENKO K.K.Inventors: Yoshiaki Kageshima, Daisuke Muto, Kenji Momose, Yoshihiko Miyasaka
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Publication number: 20170233893Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).Type: ApplicationFiled: May 4, 2017Publication date: August 17, 2017Applicant: SHOWA DENKO K.K.Inventors: Akira MIYASAKA, Yutaka TAJIMA, Yoshiaki KAGESHIMA, Daisuke MUTO, Kenji MOMOSE
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Patent number: 9679767Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.Type: GrantFiled: June 19, 2013Date of Patent: June 13, 2017Assignee: SHOWA DENKO K.K.Inventors: Akira Miyasaka, Yutaka Tajima, Yoshiaki Kageshima, Daisuke Muto, Kenji Momose
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Patent number: 9624602Abstract: An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.Type: GrantFiled: August 3, 2012Date of Patent: April 18, 2017Assignee: SHOWA DENKO K.K.Inventors: Yoshiaki Kageshima, Daisuke Muto, Kenji Momose
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Patent number: 9607832Abstract: Provided is an epitaxial wafer manufacturing device (1) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (12), arranged in close proximity to the lower surface of a top plate (3) so as to prevent deposits from being deposited on the lower surface of the top plate (3), is removably attached inside the chamber, has an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (16), (17) and (18) around the opening (13).Type: GrantFiled: August 2, 2012Date of Patent: March 28, 2017Assignee: SHOWA DENKO K.K.Inventors: Yoshiaki Kageshima, Tomoyuki Noguchi, Daisuke Muto, Kenji Momose
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Publication number: 20160379860Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.Type: ApplicationFiled: September 8, 2016Publication date: December 29, 2016Applicant: SHOWA DENKO K.K.Inventors: Yoshiaki KAGESHIMA, Daisuke MUTO, Kenji MOMOSE, Yoshihiko MIYASAKA
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Publication number: 20160312381Abstract: The SiC epitaxial wafer-producing apparatus according to the invention includes a mounting plate having a concave accommodation portion, a satellite that is provided in the concave accommodation portion and has an upper surface on which a SiC substrate is placed, and a carbon member that is provided in the concave accommodation portion at a position which is lower than the SiC substrate and does not come into contact with the SiC substrate.Type: ApplicationFiled: October 30, 2014Publication date: October 27, 2016Applicant: SHOWA DENKO K.K.Inventors: Jun NORIMATSU, Akira MIYASAKA, Yoshiaki KAGESHIMA
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Patent number: 9287121Abstract: A method of manufacturing a SiC epitaxial wafer wherein a SiC epitaxial layer is provided on a SiC single crystal substrate having an off angle. The method includes determining a ratio of basal plane dislocations (BPD) which cause stacking faults in a SiC epitaxial film of a prescribed thickness, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, determining an upper limit of surface density of basal plane dislocations, preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.Type: GrantFiled: September 4, 2012Date of Patent: March 15, 2016Assignee: SHOWA DENKO K.K.Inventors: Kenji Momose, Michiya Odawara, Daisuke Muto, Yoshiaki Kageshima
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Publication number: 20150162187Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.Type: ApplicationFiled: June 19, 2013Publication date: June 11, 2015Applicant: SHOWA DENKO K.K.Inventors: Akira Miyasaka, Yutaka Tajima, Yoshiaki Kageshima, Daisuke Muto, Kenji Momose
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Publication number: 20140230722Abstract: An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.Type: ApplicationFiled: August 3, 2012Publication date: August 21, 2014Applicant: SHOWA DENKO K.K.Inventors: Yoshiaki Kageshima, Daisuke Muto, Kenji Momose
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Publication number: 20140190400Abstract: Provided is an epitaxial wafer manufacturing device (1) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (12), arranged in close proximity to the lower surface of a top plate (3) so as to prevent deposits from being deposited on the lower surface of the top plate (3), is removably attached inside the chamber, has an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (16), (17) and (18) around the opening (13).Type: ApplicationFiled: August 2, 2012Publication date: July 10, 2014Applicant: SHOWA DENKO K.K.Inventors: Yoshiaki Kageshima, Tomoyuki Noguchi, Daisuke Muto, Kenji Momose
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Publication number: 20140175461Abstract: Provided are a SiC epitaxial wafer in which the surface density of stacking faults is reduced, and a manufacturing method thereof. The method for manufacturing such a SiC epitaxial wafer comprises a step of determining a ratio of basal plane dislocations (BPD), which causes stacking faults in a SiC epitaxial film of a prescribed thickness which is formed on a SiC single crystal substrate having an off angle, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, a step of determining an upper limit of surface density of basal plane dislocations on the growth surface of a SiC single crystal substrate used based on the above ratio, and a step of preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.Type: ApplicationFiled: September 4, 2012Publication date: June 26, 2014Applicant: SHOWA DENKO K.K.Inventors: Kenji Momose, Michiya Odawara, Daisuke Muto, Yoshiaki Kageshima
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Publication number: 20140145214Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SIC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.Type: ApplicationFiled: July 12, 2012Publication date: May 29, 2014Applicant: SHOWA DENKO K.K.Inventors: Yoshiaki Kageshima, Daisuke Muto, Kenji Momose, Yoshihiko Miyasaka