Patents by Inventor Yoshiaki Kitano
Yoshiaki Kitano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240030250Abstract: Provided is a solid-state imaging device capable of acquiring an image with higher image quality. It includes a plurality of pixel units including on-chip lenses, color filters, and photoelectric conversion units. The plurality of pixel units includes a first pixel unit (e.g., a pixel unit of an imaging pixel) and a second pixel unit (e.g., a pixel unit of a phase-difference detection pixel), the first pixel unit including an on-chip lens of a predetermined size, the second pixel unit including an on-chip lens of a size larger than the predetermined size, the first pixel unit including first pixel units, the second pixel unit including second pixel units. A height of an inter-CF light-shielding portion surrounding the respective color filters of the second pixel units is larger than a height of an inter-CF light-shielding portion between the color filters of the first pixel units.Type: ApplicationFiled: August 2, 2021Publication date: January 25, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kazuya FURUMOTO, Yuya MAEDA, Yoshiaki KITANO
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Publication number: 20230420478Abstract: An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.Type: ApplicationFiled: September 14, 2023Publication date: December 28, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Keiichi NAKAZAWA, Yoshiaki KITANO, Hirofumi YAMASHITA, Minoru ISHIDA
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Patent number: 11855108Abstract: A solid-state imaging element which detects visible light and ultraviolet light in one pixel provides improved resolution. First and second photoelectric conversion elements each perform photoelectric conversion of incident light. A first accumulation part accumulates electric charges that are photoelectrically converted by the first photoelectric conversion element second accumulation part is disposed on one face of a substrate and accumulates electric charges that are photoelectrically converted by the second photoelectric conversion element. A connection part is connected to the second accumulation part and transfers the electric charges accumulated in the second accumulation part to another face of the substrate.Type: GrantFiled: September 2, 2019Date of Patent: December 26, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Satoko Iida, Yoshiaki Kitano, Kengo Nagata, Toshiaki Ono, Tomohiko Asatsuma
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Patent number: 11798972Abstract: An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.Type: GrantFiled: December 12, 2022Date of Patent: October 24, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Keiichi Nakazawa, Yoshiaki Kitano, Hirofumi Yamashita, Minoru Ishida
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Publication number: 20230154964Abstract: An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.Type: ApplicationFiled: December 12, 2022Publication date: May 18, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Keiichi NAKAZAWA, Yoshiaki KITANO, Hirofumi YAMASHITA, Minoru ISHIDA
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Patent number: 11600651Abstract: An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.Type: GrantFiled: December 27, 2018Date of Patent: March 7, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Keiichi Nakazawa, Yoshiaki Kitano, Hirofumi Yamashita, Minoru Ishida
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Publication number: 20220384493Abstract: It is an object to provide a solid-state imaging apparatus and a distance measurement system that can detect high-frequency pulsed light. The solid-state imaging apparatus includes a plurality of pixels, a drive section, and a time measurement section. Each of the plurality of pixels has a light-receiving element that converts received light into an electric signal. The drive section drives the plurality of pixels by shifting operation timings of the light-receiving elements. The time measurement section is provided such that the electric signal is input from each of the plurality of pixels and measures the time until light emitted from a light source is reflected by a subject and received by the light-receiving element on the basis of the input of the electric signal.Type: ApplicationFiled: September 24, 2020Publication date: December 1, 2022Inventors: YUSUKE TAKATSUKA, YOSHIAKI KITANO, AKIRA MATSUMOTO
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Solid-state imaging element, method of driving solid-state imaging element, and electronic apparatus
Patent number: 11509842Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.Type: GrantFiled: October 12, 2018Date of Patent: November 22, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Toshiaki Ono, Satoko Iida, Tomohiko Asatsuma, Yoshiaki Kitano, Yusuke Matsumura, Ryoko Kajikawa -
Publication number: 20220367552Abstract: There is provided a solid-state imaging device including: a first substrate including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a second substrate including a semiconductor layer and a pixel transistor, the semiconductor layer being stacked on the first substrate, and the pixel transistor that includes a gate electrode opposed to the semiconductor layer, and reads the signal electric charge of the electric charge accumulation section; and a through electrode that is provided in the first substrate and the second substrate, and electrically couples the first substrate and the second substrate to each other and is partially in contact with the gate electrode.Type: ApplicationFiled: June 25, 2020Publication date: November 17, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Yoshiaki KITANO
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Publication number: 20220336504Abstract: A semiconductor device capable of reducing the size of pixels while maintaining a device withstand voltage is provided. The semiconductor device includes a pixel array unit in which a plurality of pixels each having an avalanche photodiode element is arranged in a matrix, and the avalanche photodiode element includes: a first electrode region of a first conductivity type and a second electrode region of a second conductivity type, the first electrode region and the second electrode region forming a p-n junction on the side of a first surface of a pixel formation region of a semiconductor layer, an avalanche multiplication region at the interface portion of the p-n junction; a contact region of the first conductivity type on the first surface side of the pixel formation region while being electrically connected to the first electrode region; and an insulating portion between the contact region and the second electrode region.Type: ApplicationFiled: July 15, 2020Publication date: October 20, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Yoshiaki KITANO
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Publication number: 20220238590Abstract: An imaging device according to embodiments of the present disclosure includes: a first semiconductor substrate provided with a photoelectric conversion element, floating diffusion that temporarily holds a charge output from the photoelectric conversion element, and a transfer transistor that transfers the charge output from the photoelectric conversion element to the floating diffusion; and a second semiconductor substrate provided on the first semiconductor substrate via a first interlayer insulating film and provided with a readout circuit unit that reads out the charge held in the floating diffusion and outputs a pixel signal.Type: ApplicationFiled: June 17, 2020Publication date: July 28, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Katsunori HIRAMATSU, Shintaro OKAMOTO, Yoshiaki KITANO, Yuya MAEDA, Shinya SATO
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Publication number: 20220181363Abstract: A sensor chip of an embodiment of the present disclosure includes: a semiconductor substrate including a pixel array section in which a plurality of pixels is arranged in an array; a light receiving element provided in the semiconductor substrate for each of the pixels and including a multiplier region in which avalanche multiplication of carriers is caused by a high electric field region; and a first pixel separation section provided between the pixels, the first pixel separation section extending from one surface of the semiconductor substrate toward another surface thereof opposed to the one surface, and having a bottom in the semiconductor substrate.Type: ApplicationFiled: February 21, 2021Publication date: June 9, 2022Inventors: AKIRA MATSUMOTO, YOSHIAKI KITANO, YUSUKE TAKATSUKA
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Publication number: 20210202545Abstract: A solid-state imaging element which detects visible light and ultraviolet light in one pixel provides improved resolution. First and second photoelectric conversion elements each perform photoelectric conversion. of incident light. A first accumulation part accumulates electric charges that are photoelectrically converted by the first photoelectric conversion element. second accumulation part is disposed on one face of a substrate and accumulates electric charges that are photoelectrically converted by the second photoelectric conversion element. A connection part is connected to the second accumulation part and transfers the electric charges accumulated in the second accumulation part to another face of the substrate.Type: ApplicationFiled: September 2, 2019Publication date: July 1, 2021Inventors: SATOKO IIDA, YOSHIAKI KITANO, KENGO NAGATA, TOSHIAKI ONO, TOMOHIKO ASATSUMA
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Publication number: 20210084249Abstract: An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.Type: ApplicationFiled: December 27, 2018Publication date: March 18, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Keiichi NAKAZAWA, Yoshiaki KITANO, Hirofumi YAMASHITA, Minoru ISHIDA
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SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC APPARATUS
Publication number: 20200260026Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.Type: ApplicationFiled: October 12, 2018Publication date: August 13, 2020Inventors: TOSHIAKI ONO, SATOKO IIDA, TOMOHIKO ASATSUMA, YOSHIAKI KITANO, YUSUKE MATSUMURA, RYOKO KAJIKAWA -
Patent number: 10008529Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.Type: GrantFiled: September 17, 2015Date of Patent: June 26, 2018Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takashi Nakashikiryo, Yoshiaki Kitano, Yuuji Nishimura, Kouichi Itabasi, Ryou Chiba, Yosuke Takita, Mitsuru Ishikawa, Toyomi Jinwaki, Yuichi Seki, Masaya Shimoji, Yoichi Ootsuka, Takafumi Nishi
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Publication number: 20170278889Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.Type: ApplicationFiled: September 17, 2015Publication date: September 28, 2017Inventors: TAKASHI NAKASHIKIRYO, YOSHIAKI KITANO, YUUJI NISHIMURA, KOUICHI ITABASI, RYOU CHIBA, YOSUKE TAKITA, MITSURU ISHIKAWA, TOYOMI JINWAKI, YUICHI SEKI, MASAYA SHIMOJI, YOICHI OOTSUKA, TAKAFUMI NISHI
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Patent number: 9571721Abstract: An imaging apparatus, for example, a solid-state imaging device, includes a phase difference pixel, and an electronic apparatus that optimizes the optical properties (pupil separation performance) of the phase difference pixel, and the optical properties (light sensitivity) of a standard pixel. The solid-state imaging device includes a standard pixel and a phase difference pixel. The standard pixel includes a first optical waveguide that guides incident light to a light receiving region. The phase difference pixel includes a second optical waveguide that guides incident light to the light receiving region, and a first light shielding film provided on the upper layer side of the second optical waveguide. The upper end of the first optical waveguide of the standard pixel and the upper end of the second optical waveguide of the phase difference pixel are located at different heights.Type: GrantFiled: June 23, 2015Date of Patent: February 14, 2017Assignee: SONY CORPORATIONInventor: Yoshiaki Kitano
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Solid-state imaging device, manufacturing method and designing method thereof, and electronic device
Patent number: 9419157Abstract: A solid-state imaging device including pixel photododes on a light-receiving surface of a substrate; a first insulating film on the substrate covering a multilayer wiring on and in contact with the substrate. The first insulating film comprises material of a first refractive index lower than a refractive index of the substrate for at least bottom and top surface portions of the first insulating film. A second insulating film with a second refractive index higher than the first refractive index is on the first insulating film. A third insulating film with a third refractive index higher than the second refractive index is on the second insulating film. For each pixel, a color filter is on the third insulating film.Type: GrantFiled: October 3, 2013Date of Patent: August 16, 2016Assignee: Sony CorporationInventors: Kyoko Izuha, Hiromi Wano, Yoshiaki Kitano -
Publication number: 20160198083Abstract: The present disclosure relates to a solid-state imaging device including a phase difference pixel, and an electronic apparatus. The solid-state imaging device can optimize the optical properties (pupil separation performance) of the phase difference pixel, and the optical properties (light sensitivity) of a standard pixel. A solid-state imaging device according to an aspect of the present disclosure is a solid-state imaging device that includes a standard pixel and a phase difference pixel. The standard pixel includes a first optical waveguide that guides incident light to a light receiving region. The phase difference pixel includes: a second optical waveguide that guides incident light to the light receiving region; and a first light shielding film provided on the upper layer side of the second optical waveguide. The upper end of the first optical waveguide of the standard pixel and the upper end of the second optical waveguide of the phase difference pixel are located at different heights.Type: ApplicationFiled: June 23, 2015Publication date: July 7, 2016Inventor: YOSHIAKI KITANO