Patents by Inventor Yoshiaki Kumazawa

Yoshiaki Kumazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6270898
    Abstract: A conductive polycrystalline diamond film having specific resistance of at least 1×10−4 &OHgr;cm and less than 1×103 &OHgr;cm, whose film thickness is in the range of at least 0.1 &mgr;m and not more than 500 &mgr;m, is film-formed by vapor-phase synthesis on a surface employed for pressure bonding, a surface opposite to this surface or at least two side surfaces intersecting with these surfaces on a substrate of a bonding tool tip that is applicable for bonding and packaging a semiconductor chip.
    Type: Grant
    Filed: November 18, 1998
    Date of Patent: August 7, 2001
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Katsuko Yamamoto, Takahisa Iguchi, Yoshiaki Kumazawa, Katsuyuki Tanaka, Hiromu Shiomi, Takashi Tsuno, Naoji Fujimori
  • Patent number: 6267637
    Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
    Type: Grant
    Filed: November 9, 1999
    Date of Patent: July 31, 2001
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hirohisa Saito, Takashi Tsuno, Hiromu Shiomi, Yoshiaki Kumazawa, Takahiro Imai
  • Patent number: 6184611
    Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
    Type: Grant
    Filed: March 10, 1998
    Date of Patent: February 6, 2001
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hirohisa Saito, Takashi Tsuno, Hiromu Shiomi, Yoshiaki Kumazawa, Takahiro Imai
  • Patent number: 6103389
    Abstract: Provided is a thermal transfer recording medium which can be transferred well even onto a medium to be transferred such as a durable plastic film. The printed matters can obtain all together sufficiently high mechanical abrasion resistance, solvent resistance against various solvents and light fastness against rays such as UV rays. The above thermal transfer recording medium comprises at least a support and a thermal transfer ink layer provided on the support, wherein the thermal transfer ink layer contains a colorant and a vinyl chloride base copolymer obtained by copolymerizing three components of 50 to 90% by weight of vinyl chloride, 5 to 20% by weight of vinyl acetate and 10 to 30% by weight of hydroxyacrylate each based on the whole amount of the monomers.
    Type: Grant
    Filed: February 26, 1998
    Date of Patent: August 15, 2000
    Assignee: Kabushiki Kaisha Pilot
    Inventors: Noriatsu Tanaka, Yoshiaki Kumazawa
  • Patent number: 6103401
    Abstract: An object of the invention is to provide a window for an optical use having excellent transmission property over a wide range of from infra-red to vacuum ultraviolet as well as excellent baking resistance and capable of being fitted to an ultra-high vacuum apparatus and a process for the production of the same.This object can be attained by a window for an optical use comprising a diamond as a window material, a flange for a vacuum apparatus, a frame for bonding the diamond to the flange and the specified adhesive material for bonding the frame and diamond, and a process for the production of the window for an optical use comprising a step of preparing a diamond plate, a step of fitting a frame to a flange and bonding the diamond plate to the frame through an adhesive material. The benefits can be enlarged by suitably selecting the shape, material, etc. of the frame.
    Type: Grant
    Filed: June 16, 1997
    Date of Patent: August 15, 2000
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Norio Okada, Shuji Asaka, Tsuneo Urisu, Yoshiyuki Yamamoto, Keiichiro Tanabe, Yoshiaki Kumazawa
  • Patent number: 6096129
    Abstract: An initial single-crystalline diamond base material is prepared from a flat plate having a major surface and side surfaces consisting of low-index planes. Then, single crystalline diamond is homoepitaxially vapor-deposited on the single-crystalline diamond base material, and a resulting diamond material is cut and polished in a particular manner to provide a successive base material on which single-crystalline diamond is again grown, thereby forming a single-crystalline diamond having a large area. A holder for the single-crystalline diamond base material consists of or is coated with a material hardly forming a compound with carbon. Single crystalline diamond can be stably formed on the surfaces of the base material. Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time using either plasma CVD or a thermal filament method.
    Type: Grant
    Filed: April 15, 1998
    Date of Patent: August 1, 2000
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hirohisa Saito, Takashi Tsuno, Takahiro Imai, Yoshiaki Kumazawa
  • Patent number: 6007730
    Abstract: A diamond polycrystal body having metal films on its upper and lower surfaces is cut in the vertical direction using a laser to form a diamond polycrystal body piece having upper and lower surfaces and a cut surface connecting the upper and lower surfaces. The cut surface may be damaged and include graphite resulting from the laser cutting. To remove the damage and the graphite, the cut surface of the diamond polycrystal body piece is then plasma-treated. Thereby a prescribed degree of electrical insulation between the metallized upper and lower surfaces can be ensured.
    Type: Grant
    Filed: February 10, 1998
    Date of Patent: December 28, 1999
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hiromu Shiomi, Yoshiaki Kumazawa
  • Patent number: 5993919
    Abstract: In a method of synthesizing diamond on a substrate from plasma containing a carbon component, filaments containing tungsten as a thermoelectron-emitting material are arranged above a substrate in a chamber. An electrode is provided at a position separated from and particularly above the filaments. The filaments are at least temporarily energized with a potential relatively higher than that of the substrate, while the electrode is at least temporarily supplied with a potential relatively higher than that of the filaments. Thus, plasma is generated between the filaments and the substrate, while electrons are moved from the filaments to the electrode for also generating plasma between the filaments and the electrode, thereby forming nuclei of diamond on the substrate. Thereafter, the respective potentials of the electron emitting filaments and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.
    Type: Grant
    Filed: December 3, 1997
    Date of Patent: November 30, 1999
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takashi Tsuno, Takahiro Imai, Kentaro Yoshida, Yoshiaki Kumazawa
  • Patent number: 5964976
    Abstract: It is an object to provide a thermal-transfer recording medium and its thermal-transfer recording method whereby it is possible to perform good thermal transfer to a durable transfer medium such as plastic film etc., and the transferred image is excellent in resistance to mechanical abrasion, and whereby color reproducibility is excellent when plural colors of thermal transferred inks are printed in layers. A thermal-transfer ink layer is provided which at least presents the visco-elastic characteristics that tan.delta. is of 1 or more and the complex dynamic viscosity falls within 100 to 40,000 Pa.s in the viscoelasticity measurement with a frequency of 1 Hz in the linear viscoelastic region of temperature from 100 to 150.degree. C. Alternatively, a thermal-transfer ink layer containing a coloring matter and a thermo-fusing resin is provided on a support, and the thermo-fusing resin presents the visco-elastic characteristics that tan.delta. is of 1.
    Type: Grant
    Filed: March 3, 1998
    Date of Patent: October 12, 1999
    Assignee: Kabushiki Kaisha Pilot
    Inventors: Noriatsu Tanaka, Yoshiaki Kumazawa, Hiroyuki Aimoto
  • Patent number: 5079102
    Abstract: A tool comprising a blank and shank, bonded at a low temperature through a bonding layer of gold formed by thermocompression bonding between the blank and shank is provided which can be used at a high temperature independently of the temperature at which the blank and shank were bonded.
    Type: Grant
    Filed: July 12, 1990
    Date of Patent: January 7, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Katsuyuki Tanaka, Yoshiaki Kumazawa, Nobuo Urakawa
  • Patent number: 4859531
    Abstract: A method for bonding a cubic boron nitride sintered compact to other cubic boron nitride sintered compact or to a body of shank material is disclosed. The method comprises forming a Ti layer of 0.01-1 .mu.m in thickness over a bonding interface between two cubic boron nitride sintered compacts or between a cubic boron nitride sintered compact and a body of shank material, forming a layer of Ni or Cu over the Ti layer to a thickness of 0.01-5 .mu.n, putting together the two cubic boron nitride sintered compacts or the cubic boron nitride sintered compact and the body of shank material with a 10-1,000 .mu.m foil of Al, Al-Ni alloy or Ag--Cu--In alloy being placed over the boding interface, and heating the cubic boron nitride sintered compact structure to temperatures above the meeting point of the metal foil and not exceeding 750.degree. C. in an inert atmosphere or in a vacuum.
    Type: Grant
    Filed: July 27, 1988
    Date of Patent: August 22, 1989
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kazuwo Tsuji, Hitoshi Sumiya, Yoshiaki Kumazawa, Nobuo Urakawa, Keiichi Satoh
  • Patent number: 4828611
    Abstract: Herein is disclosed a high hardness sintered diamond compact and a process for the production of the same.The high hardness sintered diamond compact comprises 80 to 95% by volume of diamond particles, 0.5 to 5% by volume of a carbide particles selected from a group consisting of WC and (Mo,W)C and having a diameter not larger than 1 micron, and 4.5 to 15% by volume of an iron group metal, at least 95% by volume of said diamond particles having a diameter from 0.1 to 2 micron and the remainder of the diamond particles being particles having a diameter smaller than 0.1 micron.The ratio by volume of the amount of the diamond particles having a diameter from 1 to 2 micron to that of the diamond particles having a diameter from 0.1 to 1 micron ranges from 4 to 1.The high hardness sintered diamond compact according to the present invention is preferably usable as a drawing die for drawing a high hardness plated-steel wire and as a tool bit.
    Type: Grant
    Filed: December 28, 1987
    Date of Patent: May 9, 1989
    Assignee: Sumitmo Electric
    Inventors: Tetsuo Nakai, Syuzi Yazu, Keizo Asai, Yoshiaki Kumazawa