Abstract: The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.

Abstract: The present disclosure relates to a semiconductor device, a solid-state image pickup element, an image pickup device, and an electronic apparatus that are enabled to reduce restrictions on materials and restrictions on device configuration. A CSP imager and a mounting substrate are connected together with a connection portion other than a solder ball. With such a configuration, restrictions on materials and restrictions on device configuration are reduced, which has conventionally occurred because it is limited to a configuration in which solder balls are used for connection. The present disclosure can be applied to image pickup devices.

Abstract: An imaging device including: a photoelectric converter; a protection member provided on a light incidence side of the photoelectric converter; a substrate opposed to the protection member with the photoelectric converter interposed therebetween and having a first surface on the photoelectric converter side and a second surface opposed to the first surface; a rewiring layer provided in a selective region of the second surface of the substrate; and a protective resin layer provided on the second surface of the substrate, the second surface of the substrate having an external terminal coupling region exposed from the protective resin layer, and a stress relaxation region exposed from the protective resin layer and disposed at a position different from the external terminal coupling region.

Abstract: An imaging device including: a photoelectric converter; a protection member provided on a light incidence side of the photoelectric converter; a substrate opposed to the protection member with the photoelectric converter interposed therebetween and having a first surface on the photoelectric converter side and a second surface opposed to the first surface; a rewiring layer provided in a selective region of the second surface of the substrate; and a protective resin layer provided on the second surface of the substrate, the second surface of the substrate having an external terminal coupling region exposed from the protective resin layer, and a stress relaxation region exposed from the protective resin layer and disposed at a position different from the external terminal coupling region.

Abstract: The present technology relates to a semiconductor package and a method for manufacturing the semiconductor package that are capable of improving the quality of the semiconductor package having a WCSP structure. A semiconductor package includes: a semiconductor substrate including a light receiving element; an on-chip lens disposed on an incident surface side of the semiconductor substrate; a resin layer in contact with a central portion including a most protruding portion of the on-chip lens; and a glass substrate in contact with a surface of the resin layer opposite to a surface of the resin layer in contact with the on-chip lens, wherein a space is provided between a peripheral portion around the central portion of the on-chip lens and the resin layer. The present technology can be applied to, for example, an imaging element.

Abstract: A solid-state imaging element according to the present disclosure includes a first light receiving pixel, a second light receiving pixel, and a metal layer. The first light receiving pixel receives visible light. The second light receiving pixel receives infrared light. The metal layer is provided to face at least one of a photoelectric conversion unit of the first light receiving pixel and a photoelectric conversion unit of the second light receiving pixel on an opposite side of a light incident side, and contains tungsten as a main component.

Abstract: A solid-state imaging element that includes a semiconductor layer, a floating diffusion region (FD), a penetrating pixel separation region, and a non-penetrating pixel separation region. In the semiconductor layer, a visible-light pixel (PDc) that receives visible light and an infrared-light pixel (PDw) that receives infrared light are two-dimensionally arranged. The floating diffusion region is provided in the semiconductor layer and is shared by adjacent visible-light and infrared-light pixels. The penetrating pixel separation region is provided in a region excluding a region corresponding to the floating diffusion region in an inter-pixel region of the visible-light pixel and the infrared-light pixel, and penetrates the semiconductor layer in a depth direction.

Abstract: The solid-state imaging element includes a plurality of first light receiving pixels that receives visible light, a plurality of second light receiving pixels that receives infrared light, a separation region, and a light shielding wall. The plurality of first light receiving pixels and the plurality of second light receiving pixels are arranged in a matrix, and the separation regionis arranged in a lattice pattern, light and has a plurality of intersection portions The light shielding wall is provided in the separation region and includes a first light shielding wall provided along a first direction in plan view, and a second light shielding wall provided along a second direction intersecting the first direction in plan view. In addition, the first light shielding wall and the second light shielding wall are spaced apart at the intersection portionof at least a part of the separation region.

Abstract: There is provided a biological substance detection chip having high detection accuracy. The present technology provides a biological substance detection chip which is composed of a plurality of pixels, in which the pixel includes a holding surface on which a biological substance is held, a photoelectric conversion unit that is provided below the holding surface and provided on a semiconductor substrate, and a wiring layer that is provided below the photoelectric conversion unit.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first structural body and a second structural body that are layered, the first structural body including a pixel array unit, the second structural body including an input/output circuit unit, and a signal processing circuit; a first through-via, a signal output external terminal, a second through-via, and a signal input external terminal that are arranged below the pixel array, the first through-via penetrating through a semiconductor substrate constituting a part of the second structural body, the second through-via penetrating through the semiconductor substrate; a substrate connected to the signal output external terminal and the signal input external terminal; and a circuit board connected to a first surface of the substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

Abstract: Provided is a solid-state imaging device capable of improving sensitivity of near-infrared wavelengths and suppressing color mixing without being restricted by a wiring layout. A solid-state imaging device includes: a substrate on which a plurality of photoelectric conversion units are formed corresponding to different light wavelengths; a wiring layer including a transistor on a surface opposite to a surface on a light incident side of the substrate and on a photoelectric conversion unit side to execute signal processing on a charge output from the photoelectric conversion unit and a wiring on a side opposite to the photoelectric conversion unit side of the transistor so as to transfer an electrical signal obtained by the transistor; and a reflection design film on a transistor side from at least a junction between the substrate and the wiring layer, which has higher reflectivity than the wiring layer and reflects a vertical component of incident light.

Abstract: There is provided a biological substance detection chip having high detection accuracy. The present technology provides a biological substance detection chip which is composed of a plurality of pixels in which the pixel includes at least a holding surface on which a biological substance is held and a photoelectric conversion unit that is provided below the holding surface and provided on a semiconductor substrate, wherein a partition wall made of a conductor is provided between the pixels on the holding surface. In addition, the present technology provides a biological substance detection device and a biological substance detection system using the biological substance detection chip.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: The present technology generally relates to peptides that bind to the growth hormone receptor (GhR), to peptides that bind to the GhR and have antagonistic activity, and to compositions comprising such peptides.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first structural body and a second structural body that are layered, the first structural body including a pixel array unit, the second structural body including an input/output circuit unit, and a signal processing circuit; a first through-via, a signal output external terminal, a second through-via, and a signal input external terminal that are arranged below the pixel array, the first through-via penetrating through a semiconductor substrate constituting a part of the second structural body, the second through-via penetrating through the semiconductor substrate; a substrate connected to the signal output external terminal and the signal input external terminal; and a circuit board connected to a first surface of the substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

Abstract: An ink contains at least one kind of polyether-modified siloxane compound and at least one kind of aliphatic alcohol alkylene oxide compound.

Abstract: A photoelectric conversion element includes a first electrode section; a second electrode section; an electron-transporting section between the first electrode section and the second electrode section; a light-absorbing section; and a hole-transporting section. The hole-transporting section has a peak that reaches maximum at a Raman shift of 1575 cm?1±10 cm?1 and a peak that reaches maximum at a Raman shift of 1606 cm ?1±10 cm?1 in a Raman spectrum obtained by emitting laser light having a wavelength of 532 nm; and has a peak intensity ratio A/B of 0.80 or more, the peak intensity ratio A/B being obtained from a maximum peak intensity A of the peak that reaches maximum at 1575 cm?1±10 cm?1 and a maximum peak intensity B of the peak that reaches maximum at 1606 cm?1±10 cm?1.

Abstract: An ink contains a coloring material, an organic solvent, a resin, and a compound represented by Chemical Formula 1 having a weight average molecular weight of from 390 to 610, where R1 represents a hydrocarbon group, and n represents an integer of 2 or greater.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: There is provided an imaging device capable of further improving image quality of a subject, particularly a lesion portion such as cancer. There is provided an imaging device including: a first substrate including a first pixel array unit in which a plurality of pixels having at least a first photoelectric conversion unit is arranged in a two-dimensional manner, a first wiring layer, and a first support layer stacked in this order; and a second substrate including a second pixel array unit in which a plurality of pixels having at least a second photoelectric conversion unit is arranged in a two-dimensional manner, a second wiring layer, and a second support layer stacked in this order, in which the first support layer and the second support layer are bonded to each other to form a stacked structure, and at least one of the support layers includes an antireflection layer.