Patents by Inventor Yoshiaki Masuda

Yoshiaki Masuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240363656
    Abstract: The present disclosure relates to an imaging element package and an electronic device that allow images to be captured with better quality. A support portion configured to support a cover glass that protects a light-receiving surface of a semiconductor substrate provided with a photodiode is provided along an outer periphery of the semiconductor substrate, and an antireflection layer is provided between the support portion and the semiconductor substrate at least in an area where the support portion is provided. The antireflection layer is provided entirely on the light-receiving surface of the semiconductor substrate, and the support portion is stacked on the antireflection layer. The present disclosure can be applied to a CMOS image sensor, for example.
    Type: Application
    Filed: May 23, 2022
    Publication date: October 31, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshiaki MASUDA, Takashi MIYANAGA, Koshi OKITA, Shinichiro NOUDO, Shingo HAMAGUCHI, Atsushi TODA, Tomohiko ASATSUMA, Naoki YAMASHITA
  • Publication number: 20240306490
    Abstract: Compounds of formulae (2-7) or (2-9) are provided: Also provided are organic electroluminescence (EL) devices containing the compounds having a high emission efficiency when operated at low voltage and a long lifetime and electronic devices including such organic EL devices.
    Type: Application
    Filed: April 25, 2024
    Publication date: September 12, 2024
    Applicant: IDEMITSU KOSAN CO.,LTD.
    Inventors: Ryota TAKAHASHI, Tomoki KATO, Hirokatsu ITO, Masahiro KAWAMURA, Masakazu FUNAHASHI, Hiroyuki SAITO, Yuichiro KAWAMURA, Yoshiaki TAKAHASHI, Tetsuya MASUDA, Hitoshi KUMA
  • Publication number: 20240290801
    Abstract: The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.
    Type: Application
    Filed: April 5, 2024
    Publication date: August 29, 2024
    Applicant: SONY GROUP CORPORATION
    Inventors: Harumi TANAKA, Yoshiaki MASUDA, Shinji MIYAZAWA, Minoru ISHIDA
  • Patent number: 12070800
    Abstract: One aspect of the present invention is a method for manufacturing an electronic component, the method including: a first step of applying a metal paste containing metal particles onto a polymer compact in a prescribed pattern to form a metal paste layer; a second step of sintering the metal particles to form metal wiring; a third step of applying a solder paste containing solder particles and a resin component onto the metal wiring to form a solder paste layer; a fourth step of disposing an electronic element on the solder paste layer; and a fifth step of heating the solder paste layer so as to form a solder layer bonding the metal wiring and the electronic element, and so as to form a resin layer covering at least a portion of the solder layer.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: August 27, 2024
    Assignee: RESONAC CORPORATION
    Inventors: Yoshinori Ejiri, Shinichirou Sukata, Masaya Toba, Hideo Nakako, Yuki Kawana, Kosuke Urashima, Motoki Yonekura, Takaaki Nohdoh, Yoshiaki Kurihara, Hiroshi Masuda, Keita Sone
  • Publication number: 20240209027
    Abstract: The present invention relates to a peptide and a composition comprising the peptide. This peptide of the present invention comprises the following amino acid sequence: MeA-MeF-S-Cha-Y-S-Y-Y-R-R-Cha-C (SEQ ID NO: 2) or an amino acid sequence having a substitution, addition, deletion, or insertion in 1 to 10 amino acid residues selected from the group consisting of amino acid residues at positions 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10 in the above amino acid sequence.
    Type: Application
    Filed: March 22, 2022
    Publication date: June 27, 2024
    Inventors: Koichi Watashi, Hirofumi Ohashi, Keiichi Masuya, Masaki Ohuchi, Haruaki Kurasaki, Katsuma Matsui, Takayuki Nagasawa, Junpei Yamamoto, Kazutaka Nagatomo, Kei Sudo, Naoko Nakamura, Koji Yoshida, Yoshiaki Shimada, Tatsuya Niimi, Yoshiaki Masuda, Naoko Iwata, Nozomi Shiwa, Noriyo Nagata, Tadaki Suzuki, Hidetomo Kitamura
  • Patent number: 12009382
    Abstract: There is provided an imaging device capable of further improving image quality of a subject, particularly a lesion portion such as cancer. There is provided an imaging device including: a first substrate including a first pixel array unit in which a plurality of pixels having at least a first photoelectric conversion unit is arranged in a two-dimensional manner, a first wiring layer, and a first support layer stacked in this order; and a second substrate including a second pixel array unit in which a plurality of pixels having at least a second photoelectric conversion unit is arranged in a two-dimensional manner, a second wiring layer, and a second support layer stacked in this order, in which the first support layer and the second support layer are bonded to each other to form a stacked structure, and at least one of the support layers includes an antireflection layer.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: June 11, 2024
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshiaki Masuda, Tomohiko Asatsuma
  • Publication number: 20240186352
    Abstract: Provided is an imaging device capable of suppressing an influence of flare. An imaging device according to the present disclosure includes: a pixel region in which a plurality of pixels that performs photoelectric conversion is arranged; an on-chip lens provided on the pixel region; a protective member provided on the on-chip lens; and a resin layer that adheres between the on-chip lens and the protective member, in which when a thickness of the resin layer and the protective member is T, a length of a diagonal line of the pixel region viewed from an incident direction of light is L, and a critical angle of the protective member is ?c, T?L/2/tan?c (Formula 2) or T?L/4/tan?c (Formula 3) is satisfied.
    Type: Application
    Filed: February 9, 2022
    Publication date: June 6, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshiaki MASUDA, Keisuke HATANO, Hirokazu SEKI, Atsushi TODA, Shinichiro NOUDO, Yusuke OIKE, Yutaka OOKA, Naoto SASAKI, Toshiki SAKAMOTO, Takafumi MORIKAWA
  • Patent number: 11973091
    Abstract: The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.
    Type: Grant
    Filed: January 13, 2021
    Date of Patent: April 30, 2024
    Assignee: Sony Corporation
    Inventors: Harumi Tanaka, Yoshiaki Masuda, Shinji Miyazawa, Minoru Ishida
  • Patent number: 11923395
    Abstract: The present disclosure relates to a semiconductor device, a solid-state image pickup element, an image pickup device, and an electronic apparatus that are enabled to reduce restrictions on materials and restrictions on device configuration. A CSP imager and a mounting substrate are connected together with a connection portion other than a solder ball. With such a configuration, restrictions on materials and restrictions on device configuration are reduced, which has conventionally occurred because it is limited to a configuration in which solder balls are used for connection. The present disclosure can be applied to image pickup devices.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: March 5, 2024
    Assignee: Sony Group Corporation
    Inventors: Yoshiaki Masuda, Minoru Ishida
  • Publication number: 20230335574
    Abstract: An imaging device including: a photoelectric converter; a protection member provided on a light incidence side of the photoelectric converter; a substrate opposed to the protection member with the photoelectric converter interposed therebetween and having a first surface on the photoelectric converter side and a second surface opposed to the first surface; a rewiring layer provided in a selective region of the second surface of the substrate; and a protective resin layer provided on the second surface of the substrate, the second surface of the substrate having an external terminal coupling region exposed from the protective resin layer, and a stress relaxation region exposed from the protective resin layer and disposed at a position different from the external terminal coupling region.
    Type: Application
    Filed: June 26, 2023
    Publication date: October 19, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshiaki MASUDA, Tokihisa KANEGUCHI
  • Patent number: 11735615
    Abstract: An imaging device including: a photoelectric converter; a protection member provided on a light incidence side of the photoelectric converter; a substrate opposed to the protection member with the photoelectric converter interposed therebetween and having a first surface on the photoelectric converter side and a second surface opposed to the first surface; a rewiring layer provided in a selective region of the second surface of the substrate; and a protective resin layer provided on the second surface of the substrate, the second surface of the substrate having an external terminal coupling region exposed from the protective resin layer, and a stress relaxation region exposed from the protective resin layer and disposed at a position different from the external terminal coupling region.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: August 22, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshiaki Masuda, Tokihisa Kaneguchi
  • Publication number: 20230253427
    Abstract: The present technology relates to a semiconductor package and a method for manufacturing the semiconductor package that are capable of improving the quality of the semiconductor package having a WCSP structure. A semiconductor package includes: a semiconductor substrate including a light receiving element; an on-chip lens disposed on an incident surface side of the semiconductor substrate; a resin layer in contact with a central portion including a most protruding portion of the on-chip lens; and a glass substrate in contact with a surface of the resin layer opposite to a surface of the resin layer in contact with the on-chip lens, wherein a space is provided between a peripheral portion around the central portion of the on-chip lens and the resin layer. The present technology can be applied to, for example, an imaging element.
    Type: Application
    Filed: June 23, 2021
    Publication date: August 10, 2023
    Inventors: YOSHIAKI MASUDA, TOKIHISA KANEGUCHI
  • Publication number: 20230230986
    Abstract: A solid-state imaging element according to the present disclosure includes a first light receiving pixel, a second light receiving pixel, and a metal layer. The first light receiving pixel receives visible light. The second light receiving pixel receives infrared light. The metal layer is provided to face at least one of a photoelectric conversion unit of the first light receiving pixel and a photoelectric conversion unit of the second light receiving pixel on an opposite side of a light incident side, and contains tungsten as a main component.
    Type: Application
    Filed: April 14, 2021
    Publication date: July 20, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshiaki MASUDA, Kazuyoshi YAMASHITA, Shinichiro KURIHARA, Syogo KUROGI, Yusuke UESAKA, Toshiki SAKAMOTO, Hiroyuki KAWANO, Masatoshi IWAMOTO, Takashi TERADA, Sintaro NAKAJIKI, Shinta KOBAYASHI, Chihiro ARAI
  • Publication number: 20230215901
    Abstract: A solid-state imaging element that includes a semiconductor layer, a floating diffusion region (FD), a penetrating pixel separation region, and a non-penetrating pixel separation region. In the semiconductor layer, a visible-light pixel (PDc) that receives visible light and an infrared-light pixel (PDw) that receives infrared light are two-dimensionally arranged. The floating diffusion region is provided in the semiconductor layer and is shared by adjacent visible-light and infrared-light pixels. The penetrating pixel separation region is provided in a region excluding a region corresponding to the floating diffusion region in an inter-pixel region of the visible-light pixel and the infrared-light pixel, and penetrates the semiconductor layer in a depth direction.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 6, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kazuyoshi YAMASHITA, Yoshiaki MASUDA, Shinichiro KURIHARA, Syogo KUROGI, Yusuke UESAKA, Toshiki SAKAMOTO, Hiroyuki KAWANO, Masatoshi IWAMOTO, Takashi TERADA, Sintaro NAKAJIKI
  • Publication number: 20230197748
    Abstract: The solid-state imaging element includes a plurality of first light receiving pixels that receives visible light, a plurality of second light receiving pixels that receives infrared light, a separation region, and a light shielding wall. The plurality of first light receiving pixels and the plurality of second light receiving pixels are arranged in a matrix, and the separation regionis arranged in a lattice pattern, light and has a plurality of intersection portions The light shielding wall is provided in the separation region and includes a first light shielding wall provided along a first direction in plan view, and a second light shielding wall provided along a second direction intersecting the first direction in plan view. In addition, the first light shielding wall and the second light shielding wall are spaced apart at the intersection portionof at least a part of the separation region.
    Type: Application
    Filed: April 13, 2021
    Publication date: June 22, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yusuke UESAKA, Kazuyoshi YAMASHITA, Yoshiaki MASUDA, Shinichiro KURIHARA, Syogo KUROGI, Toshiki SAKAMOTO, Hiroyuki KAWANO, Masatoshi IWAMOTO, Takashi TERADA, Sintaro NAKAJIKI
  • Publication number: 20230063356
    Abstract: There is provided a biological substance detection chip having high detection accuracy. The present technology provides a biological substance detection chip which is composed of a plurality of pixels, in which the pixel includes a holding surface on which a biological substance is held, a photoelectric conversion unit that is provided below the holding surface and provided on a semiconductor substrate, and a wiring layer that is provided below the photoelectric conversion unit.
    Type: Application
    Filed: January 29, 2021
    Publication date: March 2, 2023
    Inventors: HARUMI TANAKA, YOSHIAKI MASUDA, YUSUKE UESAKA, TAKAFUMI MORIKAWA
  • Publication number: 20230057090
    Abstract: Provided is a solid-state imaging device capable of improving sensitivity of near-infrared wavelengths and suppressing color mixing without being restricted by a wiring layout. A solid-state imaging device includes: a substrate on which a plurality of photoelectric conversion units are formed corresponding to different light wavelengths; a wiring layer including a transistor on a surface opposite to a surface on a light incident side of the substrate and on a photoelectric conversion unit side to execute signal processing on a charge output from the photoelectric conversion unit and a wiring on a side opposite to the photoelectric conversion unit side of the transistor so as to transfer an electrical signal obtained by the transistor; and a reflection design film on a transistor side from at least a junction between the substrate and the wiring layer, which has higher reflectivity than the wiring layer and reflects a vertical component of incident light.
    Type: Application
    Filed: January 7, 2021
    Publication date: February 23, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Yoshiaki MASUDA
  • Publication number: 20230055685
    Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first structural body and a second structural body that are layered, the first structural body including a pixel array unit, the second structural body including an input/output circuit unit, and a signal processing circuit; a first through-via, a signal output external terminal, a second through-via, and a signal input external terminal that are arranged below the pixel array, the first through-via penetrating through a semiconductor substrate constituting a part of the second structural body, the second through-via penetrating through the semiconductor substrate; a substrate connected to the signal output external terminal and the signal input external terminal; and a circuit board connected to a first surface of the substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.
    Type: Application
    Filed: October 28, 2022
    Publication date: February 23, 2023
    Applicant: SONY GROUP CORPORATION
    Inventors: Shinji MIYAZAWA, Yoshiaki MASUDA
  • Publication number: 20230047769
    Abstract: There is provided a biological substance detection chip having high detection accuracy. The present technology provides a biological substance detection chip which is composed of a plurality of pixels in which the pixel includes at least a holding surface on which a biological substance is held and a photoelectric conversion unit that is provided below the holding surface and provided on a semiconductor substrate, wherein a partition wall made of a conductor is provided between the pixels on the holding surface. In addition, the present technology provides a biological substance detection device and a biological substance detection system using the biological substance detection chip.
    Type: Application
    Filed: January 29, 2021
    Publication date: February 16, 2023
    Inventors: HARUMI TANAKA, YOSHIAKI MASUDA
  • Patent number: 11570387
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: January 31, 2023
    Assignee: SONY GROUP CORPORATION
    Inventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita