Abstract: This invention provides an oil composition for cutting and grinding by minimum quantity lubrication system, characterized by comprising an ester oil with a kinematic viscosity of 0.5-20 mm2/s at 100° C., and an ester-based polymer with a kinematic viscosity exceeding 20 mm2/s at 100° C. and an average molecular weight of 5,000-10,000,000. The oil composition for cutting and grinding by minimum quantity lubrication system according to the invention can achieve an excellent balance between misting property and inhibition of floating mist and ensure that an adequate amount reaches the working section, for cutting and grinding by minimum quantity lubrication system.

Abstract: This invention provides an oil composition for cutting and grinding by minimum quantity lubrication system, characterized by comprising an ester oil with a kinematic viscosity of 0.5-20 mm2/s at 100° C., and an ester-based polymer with a kinematic viscosity exceeding 20 mm2/s at 100° C. and an average molecular weight of 5,000-10,000,000. The oil composition for cutting and grinding by minimum quantity lubrication system according to the invention can achieve an excellent balance between misting property and inhibition of floating mist and ensure that an adequate amount reaches the working section, for cutting and grinding by minimum quantity lubrication system.

Abstract: This invention provides an oil composition for cutting and grinding by minimum quantity lubrication system, characterized by comprising an ester oil with a kinematic viscosity of 0.5-20 mm2/s at 100° C., and an ester-based polymer with a kinematic viscosity exceeding 20 mm2/s at 100° C. and an average molecular weight of 5,000-10,000,000. The oil composition for cutting and grinding by minimum quantity lubrication system according to the invention can achieve an excellent balance between misting property and inhibition of floating mist and ensure that an adequate amount reaches the working section, for cutting and grinding by minimum quantity lubrication system.

Abstract: The present invention provides a Fresnel lens sheet capable of successfully avoiding the “collapse”, “abrasion” and “moiré” problems. A Fresnel lens sheet constitutes, together with a lenticular lens sheet, a rear projection screen, which is mounted in the frame of a rear projection type display. The Fresnel lens sheet includes, on one surface of its substrate, a Fresnel lens part containing a plurality of lenses concentrically formed on one plane. The apexes of the lenses situated in the area between the center and the outer edge of the Fresnel lens part are flattened to give flat faces, and the widths of the flat faces of the lenses on the outer edge side are made greater than the widths of the flat faces of the lenses on the center side. The widths of the flat faces of the lenses are from 0 to 30 ?m.

Abstract: An anti-glare film is superior in low reflectivity and economy and balances conductivity, abrasion resistance, and contamination resistance. The anti-glare film has a transparent substrate, and at least a hard coat layer, a high refractive index layer, and a low refractive index layer provided on the transparent substrate, the high refractive index layer contains a radiation curable resin composition containing electroconductive inorganic ultrafine particles, and has a refractive index after curing of 1.6 to 1.8, the low refractive index layer contains fluorine containing polysiloxane, and has a refractive index after curing of 1.36 to 1.42, and the electroconductive inorganic ultrafine particle is at least one selected from tin oxide, indium tin oxide (ITO), and zinc oxide, and is contained at 75% or more by weight ratio in the high refractive index layer.

Abstract: Peripheries of a contact 26 for connecting a polycrystalline silicon layer 20 to a pixel electrode 28 are cut by a laser to form a cut area 50. By this cut area 50, the polycrystalline silicon layer 20 around the contact 26 is also cut. In consequence, a TFT 24 is separated from the pixel electrode 28 and a supplemental capacitor electrode 32 to reliably accomplish darkening.

Abstract: A cup shaped yoke made of sheet material has an opening portion provided in a side wall on an axial end side, a shoulder portion provided in the sidewall on another axial end side, a magnet installation portion for installing a magnet, which is provided in the side wall between the opening and shoulder portions and whose wall thickness is substantially equal to thickness of the sheet material, and a bottom portion, which is provided in a bottom wall, having a boss shaped bearing accommodating portion in a center thereof. Each wall thickness of the opening, shoulder and bottom portions including the boss shaped bearing accommodating portion is equal to or smaller than a half of wall thickness of the magnet installation portion.

Abstract: A core insulator fit on a stacked core is formed in a single unit which has tooth cover pieces and coil bobbin piece. The tooth cover pieces are formed to extend in the radial direction and be spaced apart equi-angularly for covering one axial side surface of the stacked core. The coil bobbin piece extends from the corresponding tooth cover pieces in the axial direction to cover the inner side surfaces of slots of the stacked core. The top ends of the coil bobbin piece protrude from the other axial side surface of the stacked core, when the core insulator is fit on the stacked core.

Abstract: A cup shaped yoke made of sheet material has an opening portion provided in a side wall on an axial end side, a shoulder portion provided in the sidewall on another axial end side, a magnet installation portion for installing a magnet, which is provided in the side wall between the opening and shoulder portions and whose wall thickness is substantially equal to thickness of the sheet material, and a bottom portion, which is provided in a bottom wall, having a boss shaped bearing accommodating portion in a center thereof. Each wall thickness of the opening, shoulder and bottom portions including the boss shaped bearing accommodating portion is equal to or smaller than a half of wall thickness of the magnet installation portion.

Abstract: Peripheries of a contact 26 for connecting a polycrystalline silicon layer 20 to a pixel electrode 28 are cut by a laser to form a cut area 50. By this cut area 50, the polycrystalline silicon layer 20 around the contact 26 is also cut. In consequence, a TFT 24 is separated from the pixel electrode 28 and a supplemental capacitor electrode 32 to reliably accomplish darkening.

Abstract: A core insulator fit on a stacked core is formed in a single unit which has tooth cover pieces and coil bobbin piece. The tooth cover pieces are formed to extend in the radial direction and be spaced apart equi-angularly for covering one axial side surface of the stacked core. The coil bobbin piece extends from the corresponding tooth cover pieces in the axial direction to cover the inner side surfaces of slots of the stacked core. The top ends of the coil bobbin piece protrude from the other axial side surface of the stacked core, when the core insulator is fit on the stacked core.

Abstract: A semiconductor device for outputting a reference voltage, the value of which changes depending on the ambient temperature, and a crystal oscillator device comprising the semiconductor device. The semiconductor device comprises at least one depletion MOS transistor having an overall conductivity coefficient KDO and at least one enhancement MOS transistor having an overall conductivity coefficient KEO, wherein KDO does not equal KEO and the transistors are connected in series. Thus, the semiconductor device provides an output reference voltage having a predetermined temperature characteristic which can be effectively controlled in accordance with the ambient temperature. The semiconductor device is employed in a two-level housing or in a one-level housing package so that the crystal oscillator device can have a small size and is produced easily. Also disclosed is a method of producing the crystal oscillator device.

Abstract: In a semiconductor memory device including a plurality of memory cells, in which when an address of any one of the memory cells is input, data is read out from the memory cell corresponding to the address so as to be output, the semiconductor memory device includes null addresses having no corresponding memory cells; and predetermined data is output in response to input of the null addresses.

Abstract: A set of series-connected N-MOSFETs 1, 3 and a set of series-connected N-MOSFETs 2, 4 are connected in parallel with each other between a pull-up node e1 of a P-MOSFET 5 and a GND. A set of series-connected P-MOSFETs 11, 13 and a set of series-connected P-MOSFETs 12, 14 are connected in parallel with each other between a power source VDD and a pull-down node f1 of an N-MOSFET 15. The pull-down node f1 is connected to the gate of an N-MOSFET 16, and the pull-up node e1 is connected to the input gate of an inverter 17. The transition of the signal inputted to each transistor is detected thereby to generate a pulse signal at the output OUT of the inverter. Gate signal b1 is delayed behind gate signal a1 by an amount of one inverter stage, gate signal c1 is delayed behind gate signal a1 by an amount of three inverter stages, and gate signal d1 is delayed behind gate signal b1 by an amount of three inverter stages.

Abstract: A reference pulse generator comprises a quartz crystal oscillator, a frequency divider connected to the oscillator for frequency dividing the oscillator output, and a constant current generator connected in series both with the oscillator and the frequency divider to control the current applied to the oscillator from a power source. The constant current generator comprises a current limiting element, such as a MOSFET, which is controlled by a reference voltage produced by a reference voltage generator.

Abstract: Metal-oxide semiconductors are used for the logic control circuit and the drive circuit of a thermal print head to eliminate defects such as breakdowns and erroneous operations caused by heat generated in the thermal head and to reduce current consumption.

Abstract: A switchboard control system in which a plurality of switchboards are connected to a time division exchange and controlled by the time division exchange. A speech signal and a control signal (a signal for key information, display information, subscriber number information and other information necessary for the exchange operation by a switchboard operator), which are delivered and received by each switchboard and the time division exchange, are transmitted together by a common transmission line on a time-division-multiplexed basis. On the side of the system toward the switchboards are disposed a position controller, by which the signals are multiplexed and separated and the common transmission line and the switchboards are interconnected. For delivering and receiving the signals, common channel signalling equipment is connected to the time division exchange and remote channel signalling equipment is provided in the position controller.

Abstract: A centralized supervisory system in an automatic switching system including at least one remote office with a first time-division switching system and a first supervisory unit, and a central office with a second time-division switching system and a second supervisory unit. The first time-division switching system and the second time-division switching system being connected by a time-division multichannel line. Supervisory data output from the first supervisory unit are allocated to one or more predetermined channels on the time-division multichannel line, so that the supervisory data output from the first supervisory unit are transferred through the time-division multichannel line to the second supervisory unit and are centrally supervised therein.

Abstract: A semiconductor device for generating a constant voltage and comprised of a pair of MOS field effect transistors of the same conductivity type connected in series. A first of the transistors is a depletion type and has a gate connected to its source and its source connected to its substrate so as to operate as an active device. The second transistor has a gate connected to its drain and a source connected to its substrate. When a supply voltage is applied across the series combination of the first and second transistors, a constant voltage is developed at the connection node between the first and second transistors.

Abstract: An electronic sound generator is developed for generating a sound similar to that of ANGKLONG (Indonesian terms), which comprises a circuit for generating a series of consequtive rectangular waves. A plurality of envelope wave generation circuits each produce an envelope wave having the same repeating cycle as that of each said rectangular wave and, one or more sound source circuits are used for generating signals substantially equal to the output waves of angklong, circuits in each of which an output of a sound source circuit is modulated by the relevant envelop wave. A loudspeaker sounds the modulated signal as a musical sound. In a record embodiment the sound generator further comprises a first gate to which the modulated signal is directly applied, a second gate is connected in series with the volume and/or tone control circuit, means for opening said first and second gates alternatively and a means for combining the outputs of said first and second gates to provide a musical sound from the loudspeaker.