Patents by Inventor Yoshiaki Mori

Yoshiaki Mori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6604672
    Abstract: A method and apparatus for solid bonding without using a bonding agent are provided. A surface of metal, glass, or other bond members 16a and 16b is fluorinated by exposure to a mixture of HF gas from a HF gas supply unit 24 and water vapor from a vapor generator 26 in a fluorination process section 12. The bond members 16a and 16b are then placed in contact at the fluorinated surface on table 36 in bonding process section 14. Argon is then introduced to bonding chamber 34. Pressure is then applied to the first bond member 16a and second bond member 16b by a cylinder 46, and heated to below the melting point by a heater 48, to bond the first and second bond members together.
    Type: Grant
    Filed: March 5, 2001
    Date of Patent: August 12, 2003
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Yasutsugu Aoki, Takuya Miyakawa
  • Patent number: 6606683
    Abstract: To provide an information recording apparatus capable of continuing appropriate update processing in the case where data updating processing is stopped on one processing apparatus due to a power failure or memory failure, etc. by using un-updated data stored in duplicate in the other processing apparatus.
    Type: Grant
    Filed: December 26, 2000
    Date of Patent: August 12, 2003
    Assignee: NEC Corporation
    Inventor: Yoshiaki Mori
  • Publication number: 20030143845
    Abstract: The present invention provides a mask forming method that can reduce manufacturing cost.
    Type: Application
    Filed: December 4, 2002
    Publication date: July 31, 2003
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Yoshiaki Mori, Takuya Miyakawa, Mitsuru Sato, Shintaro Asuke, Kenichi Takagi
  • Patent number: 6416565
    Abstract: A method of oxygen-smelting copper sulfide concentrate to obtain white metal, nearly white metal matte or blister copper by removing most of the Fe in the copper sulfide concentrate into the slag as well as removing part or most of the S therein as SO2 wherein oxygen-smelting is carried out to produce; slag in which a weight ratio of CaO to (SiO2+CaO) is 0.3 to 0.6 and a weight ratio of Fe to (FeOx+SiO2+CaO) is 0.2 to 0.5, and white metal, nearly white metal matte or blister copper, by adding SiO2 material and CaO material to the copper sulfide concentrate as flux.
    Type: Grant
    Filed: October 5, 2000
    Date of Patent: July 9, 2002
    Assignees: Sumitomo Metal Mining Co., Ltd., Mitsubishi Materials Corporation
    Inventors: Akira Yazawa, Yoichi Takeda, Nozomu Hasegawa, Yoshiaki Mori
  • Publication number: 20020053754
    Abstract: This invention discloses a continuous production method of water-absorbing composite which comprises a complexation step for producing a particle-substrate composite by dropwisely supplying an aqueous solution of polymerizable monomers consisting mainly of an unsaturated carboxylic acid where 20% or more of the carboxyl groups in the unsaturated acid is neutralized, while allowing polymerization to proceed in the droplets, onto a fibrous substrate fed to the drop point to allow the incompletely polymerized polymer particles to adhere thereon, and by completing the polymerization thereafter; and a surface crosslinking step for reacting the composite with a crosslinking agent, having two or more functional groups capable of reacting with carboxyl group and/or carboxylate group, in the presence of 1 to 100 weight parts of water per 100 weight parts of polymer particles derived from the polymerizable monomer contained in the composite.
    Type: Application
    Filed: September 17, 2001
    Publication date: May 9, 2002
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Kouji Katoh, Kiichi Itoh, Yoshiaki Mori
  • Publication number: 20010052390
    Abstract: A method and apparatus for solid bonding without using a bonding agent are provided. A surface of metal, glass, or other bond members 16a and 16b is fluorinated by exposure to a mixture of HF gas from a HF gas supply unit 24 and water vapor from a vapor generator 26 in a fluorination process section 12. The bond members 16a and 16b are then placed in contact at the fluorinated surface on table 36 in bonding process section 14. Argon is then introduced to bonding chamber 34. Pressure is then applied to the first bond member 16a and second bond member 16b by a cylinder 46, and heated to below the melting point by a heater 48, to bond the first and second bond members together.
    Type: Application
    Filed: March 5, 2001
    Publication date: December 20, 2001
    Inventors: Yoshiaki Mori, Yasutsugu Aoki, Takuya Miyakawa
  • Publication number: 20010011357
    Abstract: In a system using a looped interface, a faulty device and a disconnected location respectively causing a link fault are specified. Plural devices 200 are connected to the looped interface 120 and a port bypass circuit 210 detaches the faulty device from the looped interface. A port bypass circuit controller 100 controls port bypass circuits and sequentially detaches a device from the looped interface when a link of the looped interface is disconnected. It is checked whether a loop fault continues or not after the device is detached. The operation is repeated by the number of the devices to acquire the result of the check and a device causing the loop fault is specified based upon the result of the check.
    Type: Application
    Filed: January 31, 2001
    Publication date: August 2, 2001
    Inventor: Yoshiaki Mori
  • Publication number: 20010009176
    Abstract: A method and apparatus for solid bonding without using a bonding agent are provided. A surface of metal, glass, or other bond members 16a and 16b is fluorinated by exposure to a mixture of HF gas from a HF gas supply unit 24 and water vapor from a vapor generator 26 in a fluorination process section 12. The bond members 16a and 16b are then placed in contact at the fluorinated surface on table 36 in bonding process section 14. Argon is then introduced to bonding chamber 34. Pressure is then applied to the first bond member 16a and second bond member 16b by a cylinder 46, and heated to below the melting point by a heater 48, to bond the first and second bond members together.
    Type: Application
    Filed: March 5, 2001
    Publication date: July 26, 2001
    Inventors: Yoshiaki Mori, Yasutsugu Aoki, Takuya Miyakawa
  • Publication number: 20010008008
    Abstract: To provide an information recording apparatus capable of continuing appropriate update processing in the case where data updating processing is stopped on one processing apparatus due to a power failure or memory failure, etc. by using un-updated data stored in duplicate in the other processing apparatus.
    Type: Application
    Filed: December 26, 2000
    Publication date: July 12, 2001
    Inventor: Yoshiaki Mori
  • Patent number: 6221197
    Abstract: A method and apparatus for solid bonding without using a bonding agent are provided. A surface of metal, glass, or other bond members 16a and 16b is fluorinated by exposure to a mixture of HF gas from a HF gas supply unit 24 and water vapor from a vapor generator 26 in a fluorination process section 12. The bond members 16a and 16b are then placed in contact at the fluorinated surface on table 36 in bonding process section 14. Argon is then introduced to bonding chamber 34. Pressure is then applied to the first bond member 16a and second bond member 16b by a cylinder 46, and heated to below the melting point by a heater 48, to bond the first and second bond members together.
    Type: Grant
    Filed: December 2, 1998
    Date of Patent: April 24, 2001
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Yasutsugu Aoki, Takuya Miyakawa
  • Patent number: 6183883
    Abstract: Brazing or soldering materials which effectively improve the wettability of the brazing alloy or solder without using flux and a method of manufacturing such materials are provided. A metallic base is placed on turntable inside a vacuum chamber. A copper target is affixed to a sputtering electrode above the metallic base. Air is removed from the vacuum chamber through a vacuum outlet to increase the vacuum therein to a specific pressure, and carbon tetrafluoride and argon are introduced from a gas inlet to control the sputter pressure. Thereafter, turntable is rotated while a high frequency voltage is applied between the target and the metallic base to form a halide layer, such as a layer of copper fluoride, on a surface of metallic base.
    Type: Grant
    Filed: June 16, 1998
    Date of Patent: February 6, 2001
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Katsuhiro Takahashi, Takuya Miyakawa, Yasushi Karasawa
  • Patent number: 6180253
    Abstract: The present invention provides a joining, brazing or soldering material wherein solderability is effectively improved without using a flux, and a production method thereof. In production of a joining material, a halogen compound is mixed, a film is formed on the surface of a solder molding or the surface of a solder molding is halogenated. In production of a joining material, a halogen compound is added to a solder melt, a film of a halogen compound is formed on the surface of a processed joining material, or the surface layer of the processed joining material is converted to a halogen compound layer by halogenation. Film formation or surface treatment may be carried out either a dry or wet method.
    Type: Grant
    Filed: April 2, 1998
    Date of Patent: January 30, 2001
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Katsuhiro Takahashi, Takuya Miyakawa
  • Patent number: 6158648
    Abstract: High frequency electrical discharge or nonpolar discharge using microwaves is generated in a gas that is introduced into a gas duct formed by a dielectric material, such as glass or ceramic. Surface treatment is applied to the components, which are under atmospheric pressure, by exposing them to the gas flow containing the active species generated by the above mentioned electrical discharge. Components are soldered before, during, or after the application of this surface treatment. The surface of the components is exposed to the active species by either directly exposing the components to the electrical discharge, or by blasting the reactive gas flow containing the active species at them. By selecting an appropriate gas for generating the active species, it is possible to improve the wettability of the surface of the component to be soldered, or to remove the organic substances or the oxide film.
    Type: Grant
    Filed: March 11, 1998
    Date of Patent: December 12, 2000
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Takuya Miyakawa, Yasuhiko Asano, Osamu Kurashina, Satoshi Miyamori, Yohei Kurashima, Makoto Anan
  • Patent number: 6105116
    Abstract: A disk cache is controlled to continue duel data writing even during a degenerated mode of operation due to a failure of a cache memory, and also to continue a FAST WRITE process while maintaining reliability for thereby avoiding a drop in performance. If a memory module MM#1 fails, processing of dirty data 111 stored in the memory module MM#1 is continued using backup data 122 stored in a memory module MM#2 for the dirty data 111 stored in the memory module MM#1. The backup data 122 stored in the memory module MM#2 for the dirty data 111 stored in the memory module MM#1 is copied to a memory module MM#3, generating backup data 111' for the dirty data 111. Then, dirty data 131 stored in the memory module MM#3 is copied to the memory module MM#2, generating backup data 112' for the dirty data 131 stored in the memory module MM#3, instead of backup data 112 stored in the memory module MM#1.
    Type: Grant
    Filed: December 23, 1997
    Date of Patent: August 15, 2000
    Assignee: NEC Corporation
    Inventor: Yoshiaki Mori
  • Patent number: 6086710
    Abstract: In a surface treatment apparatus (30) of the face type, a porous dielectric (37) is supported by the outer periphery portion of the supporting member (45) under the bottom surface of a porous electrode (32). The dielectric can be supported by the supporting member to permit the thermal expansion deformation of the dielectric by forming an upward inclined-face (47) and a downward inclined-face (43) on the supporting member (45) and the dielectric (37), respectively. Further, a discharge gas can be supplied uniformly to a discharge region (51) through the electrode (32) and the dielectric (37), both of which are porous. Many gas exhaust ports (41), by which the flow rate of the gas can be regulated, are provided around the discharge region (51). Thus, the gas is uniformly exhausted around the discharge region (51).
    Type: Grant
    Filed: December 6, 1996
    Date of Patent: July 11, 2000
    Assignee: Seiko Epson Corporation
    Inventors: Takeshi Miyashita, Takuya Miyakawa, Yasutugu Aoki, Isao Kubota, Osamu Kurashina, Yasuhiko Asano, Yoshio Oda, Yoshiaki Mori
  • Patent number: 6006763
    Abstract: A method for surface treatment of a substrate is described in which a gas discharge at or about atmospheric pressure produces activated gas or active species which are then used for surface treatment of a substrate. When the discharge gas contains oxygen, for example, surface treatment forms a metal oxide film on a metal circuit on a substrate. If, however, the gas contains hydrogen or an organic substance, a metal oxide film, such as a transparent electrode formed on the surface of a liquid crystal panel, is reduced. Alternatively, by causing discharge to take place adjacent to the surface of a liquid, or bubbled through a liquid, a liquid may be used for surface treatment of a substrate without risk of thermal or electrical damage to the substrate.
    Type: Grant
    Filed: March 16, 1998
    Date of Patent: December 28, 1999
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Takuya Miyakawa, Katsuhiro Takahashi, Takeshi Miyashita, Satoru Katagami
  • Patent number: 5741681
    Abstract: L-aspartic acid is produced by repeating the following respective steps:(1) a reaction step of producing ammonium L-aspartate from an aqueous solution containing monoammonium maleate in accordance with an isomerization reaction and an enzyme reaction caused by aspartase in the presence of ammonia;(2) an ammonia-eliminating step of converting substantially all produced ammonium L-aspartate into monoammonium salt by distilling or stripping a reaction solution obtained in the step (1);(3) a crystallization step of crystallizing L-aspartic acid and producing monoammonium maleate from a solution obtained in the step (2) by adding maleic acid, maleic anhydride or both;(4) a solid-liquid separation step of separating L-aspartic acid crystals precipitated in the step (3) from a mother liquor containing monoammonium maleate; and(5) a recycle step of supplying the mother liquor containing monoammonium maleate obtained in the step (4) to the step (1) to be used as a raw material for the reaction.
    Type: Grant
    Filed: August 8, 1996
    Date of Patent: April 21, 1998
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Naoki Kato, Yoshiaki Mori, Norioki Mine, Seishi Fujii, Naoyuki Watanabe
  • Patent number: 5735451
    Abstract: High frequency electrical discharge or nonpolar discharge using microwaves is generated in a gas that is introduced into a gas duct formed by a dielectric material, such as glass or ceramic. Surface treatment is applied to components, which are under atmospheric pressure, by exposing them to the gas flow containing the active species generated by the above mentioned electrical discharge. The components are soldered before, during, or after the application of this surface treatment. The surface of the components is exposed to the active species by either directly exposing the components to the electrical discharge, or by directing the reactive gas flow containing the active species at the component surfaces. By selecting an appropriate gas for generating the active species, it is possible to improve the wettability of the surface of the component to be soldered, or to remove organic substances or oxide film surfaces.
    Type: Grant
    Filed: February 10, 1995
    Date of Patent: April 7, 1998
    Assignee: Seiko Epson Corporation
    Inventors: Yoshiaki Mori, Takuya Miyakawa, Yasuhiko Asano, Osamu Kurashina, Satoshi Miyamori, Yohei Kurashima, Makoto Anan
  • Patent number: 5672220
    Abstract: A plurality of dielectric ceramic sheets having inner electrodes thereon are laminated and sintered. The ceramic sheets are made of a non-reducing dielectric material, and the inner electrodes are made of a base metal or a base metal alloy. After a binder removing step, the laminate is sintered in a mixed gas which contains either one or both of carbon dioxide with a purity of 99.9% or more and carbon monoxide with a purity of 99.9% or more as its main constituent and further contains hydrogen and oxygen with their densities regulated.
    Type: Grant
    Filed: April 23, 1996
    Date of Patent: September 30, 1997
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Nagato Omori, Yukio Hamaji, Yoshiaki Mori, Yukio Sakabe
  • Patent number: 5608875
    Abstract: Magnetic tape pre-read method for using the buffer for pre-read efficiently is provided. This method is executed in a pre-read control unit provided with a buffer margin memory portion and a counter. In this method, the size of data block read from a magnetic tape and the contents of the buffer margin memory portion is compared. When the size of the data block is larger than the contents of the buffer margin memory portion, the counter is incremented. If the count of the counter reaches a predetermined value as a result of the increment, the maximum value of the seize of the data blocks read out in the past is set in the buffer margin memory portion. The count of the counter does not reach the predetermined value unless large blocks appear successively. Therefore, even if large data blocks appear sporadically, the contents of the buffer margin memory portion is maintained.
    Type: Grant
    Filed: October 7, 1994
    Date of Patent: March 4, 1997
    Assignee: NEC Corporation
    Inventor: Yoshiaki Mori