Abstract: A pattern inspection apparatus configured to perform pattern inspection based on a SEM image previously measures distortion amount data representing a magnitude distribution of positional displacement caused by distortion of the SEM image in a scanning direction. When the pattern inspection is performed, the apparatus makes design data and the SEM image correspond to each other by adjusting at least one of the design data and the SEM image on the basis of the distortion amount data, and places a measurement region on the SEM image on the basis of a correspondence between the design data and the SEM image. The apparatus may further find a matching rate between a pattern of the design data and a pattern of the SEM image.

Abstract: A defect review apparatus includes: an electron scanning part which irradiates and scans an electron beam over an observation region on a surface of a sample; four electron detectors arranged around the optical axis of the electron beam with 90° intervals; and a signal processing unit which generates multiple pieces of image data of the observation region on the basis of detection signals from the electron detectors, the multiple pieces of image data respectively taken in different directions. When a pattern in the observation region is a line-and-space pattern, the defect inspection unit performs defect detection on the basis of a subtract between two pieces of the image data respectively taken in two predetermined directions with the optical axis of the electron beam in between.

Abstract: A mask inspection apparatus includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample having a pattern formed thereon by the irradiation with the electron beam, image processing means for generating image data of the pattern on the basis of the quantity of the electrons, and control means for creating a line profile and a differential profile of the pattern formed on the sample on the basis of the quantity of the electrons detected by the electron detection means. The control means detects a rising edge and a falling edge of the pattern on the basis of the differential profile, and then generates mask data of a multi-level structure on the basis of data of the edges and the image data created by the image processing means.

Abstract: A mask inspection system includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample, image processing means, storage means, and control means for determining divided areas in such a way that divided images adjacent to each other overlap with each other, and acquiring the divided images of the respective divided areas. The control means extracts two divided images adjacent to each other in a predetermined sequence, then detects an image of a same pattern formation area included in an overlap area, and determines the detected image to be a combination reference image. The control means then combines the two divided images adjacent to each other on the basis of the combination reference image to thereby form an entire SEM image of the observed area.

Abstract: A pattern inspection apparatus configured to perform pattern inspection based on a SEM image previously measures distortion amount data representing a magnitude distribution of positional displacement caused by distortion of the SEM image in a scanning direction. When the pattern inspection is performed, the apparatus makes design data and the SEM image correspond to each other by adjusting at least one of the design data and the SEM image on the basis of the distortion amount data, and places a measurement region on the SEM image on the basis of a correspondence between the design data and the SEM image. The apparatus may further find a matching rate between a pattern of the design data and a pattern of the SEM image.

Abstract: Referring to design data for a sample, a measurement region is defined at a portion in the design data which has no step in an edge of a pattern. In addition, an edge as a characteristic portion is detected from the design data, and an edge as a characteristic portion corresponding to the characteristic portion of the design data is detected from a secondary electron image. Then, the measurement region is positioned and located in a secondary electron image based on a positional relationship between the edge of the design data and the edge of the secondary electron image. A width of the pattern is measured on the basis of a distance between the two edges included in the measurement region thus located.

Abstract: A pattern measuring apparatus includes: an electron irradiating unit for radiating an electron beam onto a sample while scanning; an image data acquiring unit for acquiring an image of a pattern on the basis of secondary electrons generated from the sample; a measurement region setting unit for setting paired measurement regions each including a pattern edge in the image; and a controlling unit for calculating a distance between pattern edges in the paired measurement regions by detecting a shape of the pattern edge. The control unit calculates edge characteristic curves by finding moving averages of edge profiles and defines the positions of peak values of the edge characteristic curves as edge positions of the patterns in the measurement regions.

Abstract: A defect review apparatus includes: an electron scanning part which irradiates and scans an electron beam over an observation region on a surface of a sample; four electron detectors arranged around the optical axis of the electron beam with 90° intervals; and a signal processing unit which generates multiple pieces of image data of the observation region on the basis of detection signals from the electron detectors, the multiple pieces of image data respectively taken in different directions. When a pattern in the observation region is a line-and-space pattern, the defect inspection unit performs defect detection on the basis of a subtract between two pieces of the image data respectively taken in two predetermined directions with the optical axis of the electron beam in between.

Abstract: Provided is a mask inspection apparatus including: emitting unit for emitting electron beams onto a sample; electron detecting unit for detecting the quantity of electrons produced, by the emission of the electron beams, from the sample with patterns formed thereon; image processing unit for generating image data for the patterns on the basis of the electron quantity; and controlling unit for controlling the emitting unit, the electron detecting unit, and the image processing unit. The controlling unit calculates, from the size of a designated observation area of the sample, a division number of divisional images that are synthesized to form a joint image that covers the entire designated observation area. The controlling unit determines divisional areas so that adjacent divisional areas partially overlap each other. The controlling unit acquires SEM images for the respective divisional areas.

Abstract: A mask inspection system includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample, image processing means, storage means, and control means for calculating the number of divided images, which foam an entire combined image, on the basis of a size of a specified observed area of the sample, determining divided areas in such a way that divided images adjacent to each other overlap with each other, acquiring the divided images of the respective divided areas, and storing the divided images in the storage means, the divided images forming an entire combined image. The control means extracts two divided images adjacent to each other in a predetermined sequence starting from a specified one of the divided images.

Abstract: A mask inspection apparatus includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample having a pattern formed thereon by the irradiation with the electron beam, image processing means for generating image data of the pattern on the basis of the quantity of the electrons, and control means for creating a line profile and a differential profile of the pattern formed on the sample on the basis of the quantity of the electrons detected by the electron detection means. The control means detects a rising edge and a falling edge of the pattern on the basis of the differential profile, and then generates mask data of a multi-level structure on the basis of data of the edges and the image data created by the image processing means.

Abstract: A pattern measuring apparatus includes: an electron irradiating unit for radiating an electron beam onto a sample while scanning; an image data acquiring unit for acquiring an image of a pattern on the basis of an amount of electrons generated from the sample where the pattern is formed, by the radiation of the electron beam; a measurement region setting unit for setting paired measurement regions each including a pattern edge in the image of the pattern; and a controlling unit for calculating a distance between pattern edges in the paired measurement regions by detecting a shape of the pattern edge in each measurement region, respectively.

Abstract: Provided is a mask inspection apparatus including: emitting unit for emitting electron beams onto a sample; electron detecting unit for detecting the quantity of electrons produced, by the emission of the electron beams, from the sample with patterns formed thereon; image processing unit for generating image data for the patterns on the basis of the electron quantity; and controlling unit for controlling the emitting unit, the electron detecting unit, and the image processing unit. The controlling unit calculates, from the size of a designated observation area of the sample, a division number of divisional images that are synthesized to form a joint image that covers the entire designated observation area. The controlling unit determines divisional areas so that adjacent divisional areas partially overlap each other. The controlling unit acquires SEM images for the respective divisional areas.

Abstract: An image detection method for detecting a target image from an image of an object having a band-like pattern extending along a predetermined direction, the target image containing at least part of the band-like pattern, the method includes: storing at least part of the image of the object as image data; detecting a first partial image from the stored image data based on a first template containing a first band-like template pattern that extends along the predetermined direction, the first partial image being an image of a first partial region containing substantially the same pattern as the first band-like template pattern; and detecting a second partial image, as the target image, in a region extending from the first partial region along the predetermined direction based on the target image containing the at least part of the band-like pattern, the second partial image being an image of a second partial region containing substantially the same pattern as that of the target image.

Abstract: An image detection method for detecting a target image from an image of an object having a band-like pattern extending along a predetermined direction, the target image containing at least part of the band-like pattern, the method includes: storing at least part of the image of the object as image data; detecting a first partial image from the stored image data based on a first template containing a first band-like template pattern that extends along the predetermined direction, the first partial image being an image of a first partial region containing substantially the same pattern as the first band-like template pattern; and detecting a second partial image, as the target image, in a region extending from the first partial region along the predetermined direction based on the target image containing the at least part of the band-like pattern, the second partial image being an image of a second partial region containing substantially the same pattern as that of the target image.

Abstract: A voltage and displacement sensitive probe with an electro-optic crystal, electrically conductive transparent films and adhered to a pair of parallel surfaces on the electro-optic crystal, a transparent elastic film which circumferential portion is bonded to the frame and which is symmetric with respect to any plane through the axis thereof, a probing needle bonded at its reflective bottom surface to the central portion on the film, a holder for holding the electro-optic crystal and the transparent elastic film via frame concentrically, a lead for grounding, and electrically conductive films for connecting between the films. Displacement detection of the probing needle is based upon the change in the length of the path of the light travelling through the electro-optic crystal being reflected by the surface and travelling in reverse direction. Voltage detection of the probing needle is based upon the phase difference between the two linearly-polarized light components.

Abstract: A voltage and displacement sensitive probe with an electro-optic crystal, electrically conductive transparent films and adhered to a pair of parallel surfaces on the electro-optic crystal, a transparent elastic film which circumferential portion is bonded to the frame and which is symmetric with respect to any plane through the axis thereof, a probing needle bonded at its reflective bottom surface to the central portion on the film, a holder for holding the electro-optic crystal and the transparent elastic film via frame concentrically, a lead for grounding, and electrically conductive films for connecting between the films. Displacement detection of the probing needle is based upon the change in the length of the path of the light travelling through the electro-optic crystal being reflected by the surface and travelling in reverse direction. Voltage detection of the probing needle is based upon the phase difference between the two linearly-polarized light components.