Abstract: Disclosed is a production system for methane, including a reaction vessel having a solid electrolyte membrane and an electrode group including at least a pair of electrodes arranged on the solid electrolyte membrane, in which one of the electrodes functions as a cathode side electrode, and the other electrode functions as an anode side electrode, and the one electrode that functions as the cathode side electrode includes a hydrogenation catalyst.

Abstract: Disclosed is a production system for methane, including a reaction vessel having a solid electrolyte membrane and an electrode group including at least a pair of electrodes arranged on the solid electrolyte membrane, in which one of the electrodes functions as a cathode side electrode, and the other electrode functions as an anode side electrode, and the one electrode that functions as the cathode side electrode includes a hydrogenation catalyst.

Abstract: A highly transparent fiber composite material is provided that can be manufactured through a simplified process using reduced amounts of raw materials and that has high flexibility and low thermal expansivity and retains good functionality of the fiber material. The fiber composite material includes: a fiber assembly having an average fiber diameter of 4 to 200 nm and a 50 ?m-thick visible light transmittance of 3% or more; and a coating layer that coats and smoothes the surface of the fiber assembly, wherein the fiber composite material has a 50 ?m-thick visible light transmittance of 60% or more. With this fiber assembly, the scattering of light caused by the irregularities on the surface can be suppressed by coating the surface with the coating layer to smooth the surface, whereby a highly transparent fiber composite material can be obtained.

Abstract: A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided. A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.

Abstract: A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

Abstract: A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained.

Abstract: An organic thin film transistor including: a substrate; a gate electrode placed on the substrate; a gate insulating film placed on the gate electrode; a source electrode and a drain electrode which are placed on the gate insulating film; an organic semiconductor layer placed on the gate insulating film between the source electrode and the drain electrode; a hole transport layer placed on the organic semiconductor layer; an electron transport layer placed on the hole transport layer; and a conductor layer placed on the electron transport layer; the organic thin film transistor which characteristics are stable by being protected from oxygen or moisture and being protected electromagnetically and which is suitable for integration.

Abstract: Provided is an organic semiconductor device, suitable for the integration, including an organic thin film transistor of low voltage drive and high driving current. The organic semiconductor device including an organic thin film transistor comprising: a substrate (10); a gate electrode (12) disposed on the substrate (10); a first gate insulating film (15) disposed on the gate electrode (12); a second gate insulating film (17) disposed on the first gate insulating film (15); a source electrode (16, 20) and a drain electrode (18, 22) disposed on the second gate insulating film (17) and composed of a layered structure of a first metal layer (16, 18) and a second metal layer (20, 22); and an organic semiconductor layer (24) disposed on the gate insulating film (17) and between the source electrode (16, 20) and the drain electrode (18, 22).

Abstract: A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

Abstract: A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

Abstract: A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained.

Abstract: A highly transparent fiber composite material is provided that can be manufactured through a simplified process using reduced amounts of raw materials and that has high flexibility and low thermal expansivity and retains good functionality of the fiber material. The fiber composite material includes: a fiber assembly having an average fiber diameter of 4 to 200 nm and a 50 ?m-thick visible light transmittance of 3% or more; and a coating layer that coats and smoothes the surface of the fiber assembly, wherein the fiber composite material has a 50 ?m-thick visible light transmittance of 60% or more. With this fiber assembly, the scattering of light caused by the irregularities on the surface can be suppressed by coating the surface with the coating layer to smooth the surface, whereby a highly transparent fiber composite material can be obtained.

Abstract: A flexible substrate of an aspect of the present invention includes a substrate made of cellulose-based nanofibers and low-melting-point glass deposited inside the substrate by impregnation. A flexible substrate of another aspect of the present invention includes a substrate made of cellulose-based nanofibers and low-melting-point glass joined to one of principal surfaces of the substrate. A glass transition temperature of the low-melting-point glass is equal to or below 300° C. The flexible substrate is optically transparent.

Abstract: An organic thin film transistor including: a substrate; a gate electrode placed on the substrate; a gate insulating film placed on the gate electrode; a source electrode and a drain electrode which are placed on the gate insulating film; an organic semiconductor layer placed on the gate insulating film between the source electrode and the drain electrode; a hole transport layer placed on the organic semiconductor layer; an electron transport layer placed on the hole transport layer; and a conductor layer placed on the electron transport layer; the organic thin film transistor which characteristics are stable by being protected from oxygen or moisture and being protected electromagnetically and which is suitable for integration.

Abstract: It is an object to provide an insulating film having a very low dielectric constant and a great mechanical strength. Moreover, it is another object to provide a semiconductor device capable of reducing both a capacity between wiring layers and a capacity between wirings also in microfabrication and an increase in integration in the semiconductor device. In order to attain the objects, there is provided an inorganic insulating film comprising a porous structure having a skeletal structure in which a vacancy is arranged periodically and a large number of small holes are included.

Abstract: The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure having a pore ratio of 50% or higher.

Abstract: A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided. A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethylsilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.

Abstract: A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethylsilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

Abstract: There is included an inorganic insulating film having a porous structure including a cylindrical vacancy oriented in parallel with the surface of a substrate subjected to a hydrophilic treatment or a hydrophobic treatment.

Abstract: There is included an inorganic insulating film having a porous structure including a cylindrical vacancy oriented in parallel with the surface of a substrate subjected to a hydrophilic treatment or a hydrophobic treatment.