Abstract: The present invention provides a metal cord having better adhesion to rubber compared to a conventional one, as well as a metal cord-rubber composite and a conveyor belt, including the same. In a metal cord (10) composed of a plurality of metal filaments (11) twisted together, the surfaces of the metal filaments (11) constituting the outermost layer are each provided with a zinc plating layer (16), and the degrees of crystal orientation of the (002) plane and the (102) plane of the surface of the zinc plating layer (16) are less than 120.

Abstract: The present invention provides a metal cord having better adhesion to rubber compared to a conventional one, as well as a metal cord-rubber composite and a conveyor belt, including the same. In a metal cord (10) composed of a plurality of metal filaments (11) twisted together, the surfaces of the metal filaments (11) constituting the outermost layer are each provided with a zinc plating layer (16), and the degrees of crystal orientation of the (002) plane and the (102) plane of the surface of the zinc plating layer (16) are less than 120.

Abstract: Provided are: a rubber article-reinforcing steel cord having excellent corrosion resistance; and a method of producing the same with excellent productivity. In a rubber article-reinforcing steel cord (1), plural sheath strands (3) each formed by twisting together plural steel filaments are twisted together around at least one core strand (2) formed by twisting together plural steel filaments. Brass plating is performed on the steel filaments, and zinc plating is further performed on at least the outer circumference of the brass plating of outermost-layer steel filaments of the sheath strands (3).

Abstract: Provided is a carbon steel wire excellent in shear resistance as compared with a conventional one and a method of manufacturing such a carbon steel wire. Provided is a carbon steel wire 1 having a wire diameter of from 0.1 to 0.6 mm, and when the radius of a circular cross-section orthogonal to the longitudinal direction is r and a region from the outer periphery of the circular cross-section toward the center to 0.4r is a surface layer portion 2, the occupancy ratio of a crystal texture in the [110] orientation with respect to the longitudinal direction in the surface layer portion 2 is 60% or less.

Abstract: Whereas for each propeller blade of a radiator fan, an attachment angle ?1 at a propeller blade base portion, projected onto a plane parallel to an attachment surface of the propeller blades with respect to the boss is set in a range of 35 to 45°, an attachment angle ?2 of a propeller blade tip portion is set in a range of 15 to 22°. Seven propeller blades and a chord length Ct of the propeller blade tip portion, and an outer circumference length ?×Df of the propeller blades are set to satisfy a relationship 0.65<7Ct/(?×Df)<0.85. A tip broadening ratio of the propeller blades is set to within a range Ct/Cb=1.5 to 2.1, based on the chord length Ct at the propeller blade tip portion, and a chord length Cb at the propeller blade base portion. A fan sweep angle ?3 is set in a range of 15 to 25°.

Abstract: Whereas for each propeller blade of a radiator fan, an attachment angle &thgr;1 at a propeller blade base portion, projected onto a plane parallel to an attachment surface of the propeller blades with respect to the boss is set in a range of 35 to 45°, an attachment angle &thgr;2 of a propeller blade tip portion is set in a range of 15 to 22°. Seven propeller blades and a chord length Ct of the propeller blade tip portion, and an outer circumference length &pgr;×Df of the propeller blades are set to satisfy a relationship 0.65<7 Ct/(&pgr;×Df)<0.85. A tip broadening ratio of the propeller blades is set to within a range Ct/Cb=1.5 to 2.1, based on the chord length Ct at the propeller blade tip portion, and a chord length Cb at the propeller blade base portion. A fan sweep angle &thgr;3 is set in a range of 15 to 25°.

Abstract: A compound represented by a general formula (1) ABXn (where A is a carbon-containing group; B is at least one element selected from Si, Ge, Sn, Ti and Zr; X is a hydrolyzable group; and n is 1, 2 or 3), for example, a chlorosilane compound having a fluorocarbon group, is measured in an amount required for one time application, and dropped from a nozzle on a surface of a substrate having an active hydrogen on the surface, and simultaneously it is rubbed with a coater made of a sponge or a nonwoven fabric, etc. Furthermore, it is rubbed with a coater made of a sponge or a nonwoven fabric, etc. while blowing a dry warm air, and an elimination reaction is caused between the active hydrogen on the surface of the substrate and the hydrolyzable group of the compound. Thus, the compound is covalently bonded to the substrate. The molecules of the is silane compound also are polymerized with one another to be fixed.

Abstract: A compound represented by a general formula (1) ABXn (where A is a carbon-containing group; B is at least one element selected from Si, Ge, Sn, Ti and Zr; X is a hydrolyzable group; and n is 1, 2 or 3), for example, a chlorosilane compound having a fluorocarbon group, is measured in an amount required for one time application, and dropped from a nozzle on a surface of a substrate having an active hydrogen on the surface, and simultaneously it is rubbed with a coater made of a sponge or a nonwoven fabric, etc. Furthermore, it is rubbed with a coater made of a sponge or a nonwoven fabric, etc. while blowing a dry warm air, and an elimination reaction is caused between the active hydrogen on the surface of the substrate and the hydrolyzable group of the compound. Thus, the compound is covalently bonded to the substrate. The molecules of the silane compound also are polymerized with one another to be fixed.

Abstract: To provide a semiconductor wafer lapping method capable of preventing deformation of a press platen caused by repeating lapping and improving deterioration of TTV caused by rotation stop of semiconductor wafers. In a semiconductor wafer lapping method comprising the steps of placing a lapping carrier having holding holes loaded with semiconductor wafers between an upper press platen and a lower press platen which rotate in opposite directions, rotating the lapping carrier, and lapping the semiconductor wafers, the rotation speed of the lapping carrier is abruptly changed to induce rotation of the semiconductor wafers in the holding holes of the lapping carrier.