Abstract: Provided is a microelectrode having a layered structure, including a layer containing a polymer compound having an aromatic ring (polymer compound layer) and a layer containing a conductive material (conductive layer), wherein a thickness of the polymer compound layer is 10 to 900 nm, a thickness of the conductive layer is 0.3 to 10 nm, and the microelectrode has a three-dimensional curved shape.

Abstract: In a present vacuum treatment apparatus, a controller controls an auxiliary roller, a thermometer, a power source, and a temperature control mechanism, in which the controller detects a temperature of a base material wound and conveyed by a main roller, starts film deposition to form a film deposition material on the base material when the temperature of the base material is in a film deposition temperature range, adjusts, when the temperature of the base material is out of a threshold range after starting film deposition on the base material, the temperature of the main roller so that the temperature of the base material falls within the threshold range and adjusts an adhesion force between the main roller and the base material, and continues the film deposition of the film deposition material on the base material with the temperature of the base material in the film deposition temperature range.

Abstract: A substrate processing apparatus includes: a chamber having a container including at least one substrate-heating region and at least one substrate-cooling region; a heating mechanism configured to heat a first substrate in the at least one substrate-heating region; a cooling mechanism configured to cool a second substrate in the at least one substrate-cooling region while the first substrate is being heated; and a partition provided in the container and configured to separate the at least one substrate-heating region and the at least one substrate-cooling region from each other in terms of heat and pressure.

Abstract: Provided is an optical interference measuring apparatus including a measuring unit for acquiring an interferogram of an interference wave obtained by irradiating a measuring target and a reference surface with electromagnetic waves and causing reflected waves from a reflecting surface of the measurement target and reflected waves from the reference surface to interfere and a signal processing unit for configuring an intensity profile in the depth direction by performing Fourier transform of the interferogram. The signal processing unit is configured to estimate a parameter for a model formula for an assumed surface count, based on the model formula of an interferogram when it is assumed that the measurement target has a predetermined structure, to select an optimal model by a statistical technique from the model formula to which a parameter estimated for the assumed surface count is applied, and to reconfigure an intensity profile based on the optimal model.

Abstract: Provided is an optical interference measuring apparatus including a measuring unit configured to acquire an interferogram of an interference wave by irradiating a measurement target and a reference surface with electromagnetic waves and causing a reflected wave from a reflecting surface of the measurement target to interfere with a reflected wave from the reference surface and a signal processing unit configured to configure an intensity profile in a depth direction by performing Fourier transform of the interferogram. The signal processing unit includes at least one of a first noise removal unit to remove noise with filtering by deleting data in regions other than a pass region which is a region set with reference to a measurement target installation position from the intensity profile and a second noise removal unit to remove noise by performing singular value decomposition of the interferogram to delete noise component.

Abstract: The present application provides a composition for improving or preventing human renal diseases, containing molecular hydrogen as an active ingredient, for example, a composition for improving or preventing renal diseases in a human patient having acute or chronic nephritis, renal failure, and/or nephrotic syndrome, for example, for improving urinary protein and urinary protein/urinary creatinine ratio to a normal range, and a method for improving renal diseases by administering the composition to the patient.

Abstract: A substrate processing apparatus includes: a chamber having a container including at least one substrate-heating region and at least one substrate-cooling region; a heating mechanism configured to heat a first substrate in the at least one substrate-heating region; a cooling mechanism configured to cool a second substrate in the at least one substrate-cooling region while the first substrate is being heated; and a partition provided in the container and configured to separate the at least one substrate-heating region and the at least one substrate-cooling region from each other in terms of heat and pressure.

Abstract: There is provided a substrate processing apparatus having a transfer arm configured to transfer two substrates between a transfer chamber and a processing chamber having two mounting tables, the transfer arm holding the two substrates in a state where the two substrates overlap each other with a gap between the two substrates. The substrate processing apparatus includes: a lower substrate detection sensor configured to detect an edge portion of a lower substrate when the lower substrate is transferred; and an upper substrate detection sensor configured to detect an edge portion of an upper substrate when the upper substrate is transferred.

Abstract: A cooling mechanism includes a plurality of support stands which is provided in a vertical direction over a plurality of stages in an atmospheric transfer chamber where a down-flow is formed, a plurality of support pins which is provided in each of the support stands and supports a target object in contact with the backside of the target object. The cooling mechanism further includes a plurality of air guide plates which is provided in the support stands and cools the target object supported by the support stand located at a lower stage using the down-flow.

Abstract: A substrate processing apparatus includes a processing chamber in which a substrate is processed in a depressurized atmosphere and a transfer chamber connected to the processing chamber through a gate. A first gas supply unit is configured to supply an inert gas into the transfer chamber. A second gas supply unit is configured to supply an inert gas to the gate. A gas exhaust unit is configured to exhaust an atmosphere in the transfer chamber.

Abstract: There is provided a substrate processing apparatus having a transfer arm configured to transfer two substrates between a transfer chamber and a processing chamber having two mounting tables, the transfer arm holding the two substrates in a state where the two substrates overlap each other with a gap between the two substrates. The substrate processing apparatus includes: a lower substrate detection sensor configured to detect an edge portion of a lower substrate when the lower substrate is transferred; and an upper substrate detection sensor configured to detect an edge portion of an upper substrate when the upper substrate is transferred.

Abstract: In a method for positioning a transfer unit including, support pins for supporting object, and a pick having at a leading end thereof a detection unit for detecting presence or absence of the object, a height reference position of the pick is determined by detecting an upper edge of one of the support pins by the detection unit. A forward moving angle of the pick is corrected by obtaining a deviation angle between a radial direction of the mounting table passing through the corresponding support pin and a forward moving direction of the pick. A forward movement starting point of the pick is corrected by obtaining a horizontal deviation distance between the radial direction of the mounting table and the forward moving direction of the pick. A forward moving reference amount of the pick is obtained from coordinates of the corresponding support pin.

Abstract: A leakage determining method determines whether or not atmospheric air enters a vacuum transfer chamber for transferring a substrate under a vacuum atmosphere between a preliminary vacuum chamber and a processing chamber. The method includes controlling a pressure in the vacuum transfer chamber to a preset pressure by supplying a pressure control gas into the vacuum transfer chamber; performing supply control, when the substrate is not transferred, by reducing the amount of the pressure control gas supplied into the vacuum transfer chamber or stopping the supply of the pressure control gas; and measuring an oxygen concentration in the vacuum transfer chamber after the supply control of the pressure control gas and determining leakage of atmospheric air into the vacuum transfer chamber by determining whether or not atmospheric air whose amount exceeds a preset allowable level enters the vacuum transfer chamber based on temporal changes of the measured oxygen concentration.

Abstract: A cooling mechanism includes a plurality of support stands which is provided in a vertical direction over a plurality of stages in an atmospheric transfer chamber where a down-flow is formed, a plurality of support pins which is provided in each of the support stands and supports a target object in contact with the backside of the target object. The cooling mechanism further includes a plurality of air guide plates which is provided in the support stands and cools the target object supported by the support stand located at a lower stage using the down-flow.

Abstract: In a method for positioning a transfer unit including, support pins for supporting object, and a pick having at a leading end thereof a detection unit for detecting presence or absence of the object, a height reference position of the pick is determined by detecting an upper edge of one of the support pins by the detection unit. A forward moving angle of the pick is corrected by obtaining a deviation angle between a radial direction of the mounting table passing through the corresponding support pin and a forward moving direction of the pick. A forward movement starting point of the pick is corrected by obtaining a horizontal deviation distance between the radial direction of the mounting table and the forward moving direction of the pick. A forward moving reference amount of the pick is obtained from coordinates of the corresponding support pin.

Abstract: A substrate processing system includes a processing chamber 12, and an orienter 16 centering a wafer W. The orienter 16 is provided with an orienter sensor 42 measuring a central position discrepancy of the wafer W, and an image sensor 41 measuring a width of a non-film forming portion at circumferential portions of the wafer W. After a film deposition processing in the processing chamber 12, the wafer W is loaded into the orienter 16 where a central position discrepancy of the wafer W is measured, and the wafer W is then centered. Further, the width of the non-film forming portion of the wafer W is measured, and a film position discrepancy is calculated based on the width of the non-film forming portion. To correct the calculated film position discrepancy, a target transfer position of the wafer W on a mounting table 13 in the processing chamber 12 is adjusted.

Abstract: A load-lock apparatus includes a vessel arranged to change a pressure between a pressure corresponding to the vacuum chamber and the atmospheric pressure, a pressure adjusting mechanism which adjusts a pressure in the vessel to a pressure corresponding to the vacuum chamber and the atmospheric pressure, a cooling member having a cooling mechanism and arranged in the vessel to cool a substrate by having the substrate placed on or in proximity to the cooling member, a substrate deformation detection unit for detecting deformation of the substrate in the vessel, and a controller which reduces a cooling rate of the substrate when the substrate deformation is detected during a substrate cooling period until the vessel is adjusted to have the atmospheric pressure after the vessel is adjusted to have a pressure corresponding to the vacuum chamber and a high temperature substrate is loaded into the vessel from the vacuum chamber.

Abstract: In an enclosure inspection apparatus 11, when a sealed letter 2 is inputted into a sealed letter loading station A, visual inspecting means 27 and X-ray inspecting means 33 determine thickness of the sealed letter and whether an enclosure in the sealed letter is a predetermined suspected object. The sealed letter not less than a predetermined thickness is rejected in first sorting station D, and the sealed letter which is not thicker than the predetermined thickness and in which the suspected object is not detected is conveyed as it is to second sorting station G. As for the sealed letter which is not thicker than the predetermined thickness and in which the suspected object is detected, after the suspected object in the sealed letter is positioned in a positioning station E, a suspected object inspecting station F determines whether the above-described suspected object is a predetermined object, such as an explosive or a narcotic drug, using a terahertz wave.

Abstract: A substrate processing system includes a processing chamber 12, and an orienter 16 centering a wafer W. The orienter 16 is provided with an orienter sensor 42 measuring a central position discrepancy of the wafer W, and an image sensor 41 measuring a width of a non-film forming portion at circumferential portions of the wafer W. After a film deposition processing in the processing chamber 12, the wafer W is loaded into the orienter 16 where a central position discrepancy of the wafer W is measured, and the wafer W is then centered. Further, the width of the non-film forming portion of the wafer W is measured, and a film position discrepancy is calculated based on the width of the non-film forming portion. To correct the calculated film position discrepancy, a target transfer position of the wafer W on a mounting table 13 in the processing chamber 12 is adjusted.

Abstract: In a port structure 16A in a semiconductor processing system 2, a door 20A is disposed in a port 12A defined by upright wall 52 and 54. A table 48 opposed to the port is disposed outside the system. Defined on the table is a mount region 76 for mounting an open type cassette 18A for a process subject substrate W. A hood 50 is disposed rotatable relative to the table. The hood defines in its closed position a closed space surrounding the mount region and port, the space having a size to receive the cassette. First ventholes 58 are formed in the upright walls and/or the door so as to introduce gas from within the system into the closed space in the hood. Second ventholes 72 are formed in the table so as to discharge the gas can be discharged out of the closed space.