Abstract: A charged particle beam pattern forming device is described, a charged particle beam passing through a third aperture for forming a charged particle beam pattern, the charged particle beam pattern forming device including: a first element including a first aperture, a second element including a second aperture, the second aperture overlapping the first aperture, wherein the third aperture is defined by an overlap of the first aperture and the second aperture, and a shape of the third aperture is capable of being changed by a driver such that the first element is moved in a first direction and the second element is moved in a second direction opposite to the first direction.

Abstract: A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

Abstract: A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

Abstract: A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

Abstract: According to one embodiment, a device is disclosed. The device includes a substrate, and an element provided on the substrate. The device further includes a film provided on the substrate. The film and the substrate constitute a cavity in which the element is housed. The device further includes a gas absorbing member having a pattern, and provided in the cavity. The gas absorbing member includes a portion exposed to the cavity.

Abstract: According to one embodiment, a MEMS element comprises a first electrode fixed on a substrate, a second electrode formed above the first electrode to face it, and vertically movable, a first anchor portion formed on the substrate and configured to support the second electrode, and a first spring portion configured to connect the second electrode and the first anchor portion. The first spring portion includes a liner layer includes a brittle material in contact with the second electrode and the first anchor portion, and a base layer formed on the liner layer, includes a brittle material having a composition different from that of the liner layer, and having a film thickness larger than that of the liner layer.

Abstract: According to one embodiment, an electronic component with a MEMS device includes an insulating layer on a substrate, a MEMS device including a mechanically movable part and disposed on a part of the insulating layer, a first cap layer disposed on the MEMS device on the insulating layer to form a cavity to accommodate the MEMS device in conjunction with the insulating layer, with which a plurality of through-holes are provided to connect with the cavity, and a second cap layer disposed to cover the first cap layer, wherein a groove is provided in an area surrounding the cavity from outside to pass through at least the second cap layer.

Abstract: According to one embodiment, a MEMS device includes a first electrode formed on a support substrate, a second electrode arranged to face the first electrode and formed to be movable in a facing direction with respect to the first electrode, a beam portion formed on the support substrate and formed to support the second electrode, a cap layer formed to cover the second electrode and beam portion, a plurality of through-holes formed in the cap layer, the through-holes being formed in a portion other than a proximity portion in which a facing distance between the cap layer and a member in the cap layer is not longer than a preset distance, and a sealing layer formed to cover the cap layer and fill the through-holes.

Abstract: According to one embodiment, an electrical component comprises a substrate, a functional element formed on the substrate, a first layer which includes through holes, and forms a cavity that stores the functional element on the substrate, and a second layer which is formed on the first layer, and closes the through holes. The first layer includes a first film, a second film on the first film, and a third film on the second film. A Young's modulus of the second film is higher than a Young's modulus of the first film and the third film.

Abstract: According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a MEMS element as a first component provided on the substrate, a first film having a plurality of through holes. The first film and the substrate are configured to form a cavity accommodating the MEMS element. The device further includes a second film provided on the first film, a second component provided on the substrate and disposed outside of the cavity, and a film provided on the substrate and disposed outside of the cavity, and configured to surround the second component.

Abstract: A semiconductor device may include a p-channel semiconductor active region and an n-channel semiconductor active region. An element isolation insulating layer electrically isolates the p-channel semiconductor active region from the n-channel semiconductor active region. An insulating layer made of a different material, being in contact with both ends, in its channel length direction, of the p-channel semiconductor active region applies a compression stress in the channel length direction to a channel of the p-channel semiconductor active region. The p-channel semiconductor active region is surrounded by the insulating layer, in the channel length direction, of the p-channel semiconductor active region and by the element isolation insulating layer, parallel to the channel length direction, of the p-channel semiconductor active region. The n-channel semiconductor active region is surrounded by the element isolation insulating layer.

Abstract: A MEMS device includes: a movable element supported by a supporting member on a substrate; an encapsulation structure provided above the substrate so as to encapsulate the movable element; and a fin that is made of an insulation film, provided above the substrate, and provided inside of the encapsulation structure and outside of the movable element, and a part of the fin being positioned between a height from the substrate when the movable element are turned ON and a height from the substrate when the movable element are turned OFF.

Abstract: According to one embodiment, an electrical component comprises a substrate, an element, a first layer, and a second layer. The element is formed on the substrate. The first layer forms a cavity accommodating the element on the substrate and includes through holes. The second layer is formed on the first layer and seals the through holes. The first layer includes the first film formed on the lower side and the second film which is formed on the first film and has a lower coefficient of thermal expansion than the first film.

Abstract: A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

Abstract: A semiconductor optical wave guide device is described in which a buried oxide layer (BOX) is capable of guiding light. Optical signals may be transmitted from one part of the semiconductor device to another, or with a point external to the semiconductor device, via the wave guide. In one example, an optical wave guide is provided including a core insulating layer encompassed by a clad insulating layer. The semiconductor device may contain an etched hole for guiding light to and from the core insulating layer from a transmitter or to a receiver.

Abstract: According to one embodiment, a MEMS device includes a first electrode formed on a support substrate, a second electrode arranged to face the first electrode and formed to be movable in a facing direction with respect to the first electrode, a beam portion formed on the support substrate and formed to support the second electrode, a cap layer formed to cover the second electrode and beam portion, a plurality of through-holes formed in the cap layer, the through-holes being formed in a portion other than a proximity portion in which a facing distance between the cap layer and a member in the cap layer is not longer than a preset distance, and a sealing layer formed to cover the cap layer and fill the through-holes.

Abstract: According to one embodiment, an electrical component comprises a substrate, a functional element formed on the substrate, a first layer which includes through holes, and forms a cavity that stores the functional element on the substrate, and a second layer which is formed on the first layer, and closes the through holes. The first layer includes a first film, a second film on the first film, and a third film on the second film. A Young's modulus of the second film is higher than a Young's modulus of the first film and the third film.

Abstract: A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

Abstract: According to an embodiment, there are provided a semiconductor chip having a semiconductor element formed thereon, a pad electrode formed on the semiconductor chip and connected to the semiconductor element, a resin layer formed on the semiconductor chip, a foundation insulating layer on which an electronic element and an internal electrode are formed, a hollow body formed on the foundation insulating layer to cover the electronic element and having a top surface side embedded in the resin layer, an opening portion formed on the foundation insulating layer and configured to expose a back surface of the internal electrode, and a conductive layer configured to connect the pad electrode and the internal electrode through the opening portion.

Abstract: According to one embodiment, a MEMS element comprises a first electrode fixed on a substrate, a second electrode formed above the first electrode to face it, and vertically movable, a first anchor portion formed on the substrate and configured to support the second electrode, and a first spring portion configured to connect the second electrode and the first anchor portion. The first spring portion includes a liner layer includes a brittle material in contact with the second electrode and the first anchor portion, and a base layer formed on the liner layer, includes a brittle material having a composition different from that of the liner layer, and having a film thickness larger than that of the liner layer.