Abstract: Provided is a semiconductor device capable of suppressing misalignment of a brazing material when bonding a metal terminal to a metal circuit pattern. The semiconductor device includes an insulating substrate with a metal circuit pattern formed in a surface thereof and a metal terminal bonded onto the metal circuit pattern via a hard brazing material, in which protrusions are provided on the metal circuit pattern, and the protrusions are in contact with the hard brazing material.

Abstract: The object is to provide a technology capable of increasing the reliability of a power semiconductor device. A power semiconductor device includes: a substrate including an insulating layer and a circuit pattern that are disposed in this order; a power semiconductor element electrically connected to the circuit pattern; and an electrode terminal having a thinned portion including a welded portion welded to the circuit pattern by a fiber laser. A thickness of the circuit pattern is not less than 0.2 and not more than 0.5 mm, and a thickness of the thinned portion of the electrode terminal is not less than one time and not more than two times the thickness of the circuit pattern.

Abstract: The object is to provide a technology capable of increasing the reliability of a power semiconductor device. A power semiconductor device includes: a substrate including an insulating layer and a circuit pattern that are disposed in this order; a power semiconductor element electrically connected to the circuit pattern; and an electrode terminal having a thinned portion including a welded portion welded to the circuit pattern by a fiber laser. A thickness of the circuit pattern is not less than 0.2 and not more than 0.5 mm, and a thickness of the thinned portion of the electrode terminal is not less than one time and not more than two times the thickness of the circuit pattern.