Abstract: A merchandise item registration apparatus includes: an item code acquiring unit configured to read a merchandise item code associated with an object to be identified; an image information acquiring unit configured to acquire image information about the object to be identified by imaging the object to be identified at a time of sales registration; and an identifying unit configured to identify a merchandise type of the object to be identified based on the read merchandise item code when the merchandise item code is successfully read by the item code acquiring unit, and associate the image information acquired by the image information acquiring unit with the identified merchandise type, the image information being accumulated as a piece of a plurality of pieces of reference image information to be referred to at a time of merchandise type identification based on object recognition.

Abstract: An information management device which communicates with a mobile terminal, including a creating unit which creates advice information to be displayed on the mobile terminal for giving advice to a customer; a transmitting unit which transmits the advice information to the mobile terminal; and a requesting unit which transmits, to the mobile terminal, a deletion request for deleting the advice information, at a predetermined timing after transmission of the advice information.

Abstract: Disclosed is a data processing system including a plurality of terminals and a server connected to the terminals via a communication network. Each of the terminals includes a display unit, a layout modifier which modifies the layout data of the POP advertisement in response to a user operation, and an improvement-report-data transmitter which transmits the improvement report data to the server. The server includes an improvement analyzer which stores the linked analytical result and the improvement report data in a storage unit, and an analysis transmitter which transmits at least the POP advertisement of before and after the modification and the analytical result of the modification among the improvement report data stored in the storage unit in response to a request from any one of the terminals.

Abstract: A circuit region 2 on a main surface of an SOI substrate, and a isolating region 9b defined by insulating isolation trenches 4a and 4b are connected by a wiring resistor, or a diffused resistor 11a in the SOI substrate. The isolating region 9b and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11b in the SOI substrate. Furthermore, a circuit region 3 on a main surface of an SOI substrate, and a isolating region 9c defined by insulating isolation trenches 4c and 4d are connected by a wiring resistor, or a diffused resistor 11d in the SOI substrate. The isolating region 9c and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11c in the SOI substrate. As a result, distribution of voltage applied between the circuit regions 2 and 3 by the wiring resistors or the diffused resistors 11a to 11d can increase the withstand voltage of a semiconductor integrated circuit.

Abstract: A circuit region 2 on a main surface of an SOI substrate, and a isolating region 9b defined by insulating isolation trenches 4a and 4b are connected by a wiring resistor, or a diffused resistor 11a in the SOI substrate. The isolating region 9b and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11b in the SOI substrate. Furthermore, a circuit region 3 on a main surface of an SOI substrate, and a isolating region 9c defined by insulating isolation trenches 4c and 4d are connected by a wiring resistor, or a diffused resistor lid in the SOI substrate. The isolating region 9c and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11c in the SOI substrate. As a result, distribution of voltage applied between the circuit regions 2 and 3 by the wiring resistors or the diffused resistors 1a to 11d can increase the withstand voltage of a semiconductor integrated circuit.

Abstract: In performing record retrieval processing, a record retrieval processor forms a two-dimensional distribution graph from a plurality of records stored in a record file on the basis of designated items on the x- and y-axes and displays the distribution graph on a display unit. When a retrieval range is designated on the displayed distribution graph, the record retrieval processor retrieves records within the designated range, reads out records on the basis of key codes of the retrieved records corresponding to the items, and displays the readout records on the display unit.

Abstract: In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.

Abstract: A method for reforming an insulating film such as a BSG film formed by a CVD technique. The method reduces the parasitic capacitance between conductor layers having an intervening film, especially a BSG film, and includes the steps of depositing a BSG film on a substrate from a gaseous source and exposing the BSG film to a reforming gas plasma.

Abstract: The present invention relates to a film forming method of forming a silicon containing insulating film by plasma CVD. Objects of the present invention are to form, using a highly safe reaction gas, an insulating film which is dense, has excellent step coverage and is low in moisture and in organic residues such as carbon. The insulating film has good affinity for the silicon oxide film formed by the thermal CVD method. The invention also enables control of the refractive index and stress etc. of the insulating film formed. The mixed gas, including the organic compound having Si-H bonds and the oxidizing gas, is converted to a plasma and the silicon containing insulating film is formed on a deposition substrate from the plasma.

Abstract: The invention relates to a method for forming a BSG film by means of chemical vapor deposition, has an object which is to provide a film forming method making it possible to obtain a BSG film of high denseness and of low hygroscopicity even immediately after the film has been formed at a low temperature, and comprises a process of forming a borosilicate glass film (BSG film) on a substrate using a mixed gas of an organometallic compound having Si--O--B bond and ozone (O.sub.3).

Abstract: A slip input apparatus which when retrieving an index record with abbreviation data input, permits an operator to easily and arbitrarily set which field of the index record is to be used to retrieve an index file, which field data in the retrieved index record is to be output, and which field data in the retrieved index record is to be fetched as input data. Accordingly, irrespective of the type of data entered in abbreviation, a user is allowable to output arbitrary field data or fetch arbitrary field data from a memory as input data.