Patents by Inventor Yoshie Chiba

Yoshie Chiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for epitaxial growth of semiconductor crystal by using halogenide
    Patent number: 5469806
    Abstract: Epitaxial growth is carried out to form crystal such as GaAs, Si, etc. by using GaCl, SiCl.sub.2, etc. In the epitaxial growth, Cl atoms are left on the crystal growth surface. The Cl atoms are removed in the form of HCl molecules by vibrationally-excited H.sub.2 molecules.
    Type: Grant
    Filed: August 20, 1993
    Date of Patent: November 28, 1995
    Assignee: NEC Corporation
    Inventors: Yuji Mochizuki, Yoshie Chiba, Toshikazu Takada, Akira Usui