Patents by Inventor Yoshifumi Kishida

Yoshifumi Kishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor process for forming channel layer with passivated covering
    Patent number: 5455182
    Abstract: A thin film transistor which includes a first insulating layer, a silicon channel layer formed on the first insulating layer, and a second insulating layer formed on the silicon channel layer, and a passivation layer formed on the first insulating layer and formed successive to and covering the side face of the channel layer between the first and second insulating layers.
    Type: Grant
    Filed: May 18, 1993
    Date of Patent: October 3, 1995
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Nishimoto, Yoshifumi Kishida
  • Apparatus for washing and drying substrates
    Patent number: 4714086
    Abstract: A method for washing and drying a substrate and an apparatus therefor are disclosed which are capable of effectively rapidly carrying out the washing and drying of a semiconductor substrate in good yields without damaging and contaminating the substrate. The method comprises the steps of immersing a carrier carrying at least one substrate thereon into wash liquid; drawing up the carrier from the wash liquid while oscillating the substrate; and feeding drying gas to the substrate during the drawing-up of the carrier to remove the wash liquid from the surface of the substrate. The apparatus of the invention is constructed to allow the method to be effectively practiced.
    Type: Grant
    Filed: September 25, 1986
    Date of Patent: December 22, 1987
    Assignees: Sharp Corporation, Dainichi Shoji Co., Ltd.
    Inventors: Yoshifumi Kishida, Masayoshi Takeuchi
  • Method of washing and drying substrates
    Patent number: 4643774
    Abstract: A method for washing and drying a substrate and an apparatus therefor are disclosed which are capable of effectively rapidly carrying out the washing and drying of a semiconductor substrate in good yields without damaging and contaminating the substrate. The method comprises the steps of immersing a carrier carrying at least one substrate thereon into wash liquid; drawing up the carrier from the wash liquid while oscillating the substrate; and feeding drying gas to the substrate during the drawing-up of the carrier to remove the wash liquid from the surface of the substrate. The apparatus of the invention is constructed to allow the method to be effectively practiced.
    Type: Grant
    Filed: April 17, 1985
    Date of Patent: February 17, 1987
    Assignees: Sharp Corporation, Dainichi Shoji Co., Inc.
    Inventors: Yoshifumi Kishida, Masayoshi Takeuchi