Patents by Inventor Yoshifumi Mutoh

Yoshifumi Mutoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8441085
    Abstract: An electronic apparatus having a substrate with a bottom gate p-channel type thin film transistor; a resist pattern over the substrate; and a light shielding film operative to block light having a wavelength shorter than 260 nm over at least a channel part of said thin film transistor.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: May 14, 2013
    Assignee: Japan Display West Inc.
    Inventors: Koichi Nagasawa, Takashi Yamaguchi, Nobutaka Ozaki, Yasuhiro Kanaya, Hirohisa Takeda, Yasuo Mikami, Yoshifumi Mutoh
  • Publication number: 20100314621
    Abstract: An electronic apparatus having a substrate with a bottom gate p-channel type thin film transistor; a resist pattern over the substrate; and a light shielding film operative to block light having a wavelength shorter than 260 nm over at least a channel part of said thin film transistor.
    Type: Application
    Filed: August 3, 2010
    Publication date: December 16, 2010
    Applicant: SONY CORPORATION
    Inventors: Koichi Nagasawa, Takashi Yamaguchi, Nobutaka Ozaki, Yasuhiro Kanaya, Hirohisa Takeda, Yasuo Mikami, Yoshifumi Mutoh
  • Patent number: 7838402
    Abstract: A method of manufacturing an electronic apparatus having a resist pattern provided over a substrate provided with a thin film transistor, the method includes the steps of forming by application a resist film over the substrate in the state of covering the thin film transistor, forming a resist pattern by subjecting the resist film to exposure to light and a developing treatment, and irradiating the resist pattern with at least one of ultraviolet light and visible light in a dry atmosphere in the condition where a channel part of the thin film transistor is prevented from being irradiated with light having a wavelength of shorter than 260 nm, wherein a step of heat curing the resist pattern is conducted after the irradiation with at least one of ultraviolet light and visible light.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: November 23, 2010
    Assignee: Sony Corporation
    Inventors: Koichi Nagasawa, Takashi Yamaguchi, Nobutaka Ozaki, Yasuhiro Kanaya, Hirohisa Takeda, Yasuo Mikami, Yoshifumi Mutoh
  • Publication number: 20090134461
    Abstract: A method of manufacturing an electronic apparatus having a resist pattern provided over a substrate provided with a thin film transistor, the method includes the steps of forming by application a resist film over the substrate in the state of covering the thin film transistor, forming a resist pattern by subjecting the resist film to exposure to light and a developing treatment, and irradiating the resist pattern with at least one of ultraviolet light and visible light in a dry atmosphere in the condition where a channel part of the thin film transistor is prevented from being irradiated with light having a wavelength of shorter than 260 nm, wherein a step of heat curing the resist pattern is conducted after the irradiation with at least one of ultraviolet light and visible light.
    Type: Application
    Filed: November 21, 2008
    Publication date: May 28, 2009
    Applicant: SONY CORPORATION
    Inventors: Koichi Nagasawa, Takashi Yamaguchi, Nobutaka Ozaki, Yasuhiro Kanaya, Hirohisa Takeda, Yasuo Mikami, Yoshifumi Mutoh