Abstract: A gas supply control device that supplies a gas to a processing chamber in which a workpiece is processed, includes: a first port connected to a gas source of a purge gas; a second port to which a gas source of a processing gas is connected; a collective pipe in which each of the purge gas and the processing gas supplied from the first port and the second port merges, respectively, and flow; a first flow rate controller provided between the first port and the collective pipe; and a second flow rate controller provided between the second port and the collective pipe. A gas flow path through which the purge gas flows is provided from an output side of the first flow rate controller to an input side of the second flow rate controller.

Abstract: There is provided a gas supply apparatus that can effectively suppress a trouble caused by backflow of a process gas to the upstream side when processing is performed by using the process gas inside a chamber. The gas supply apparatus supplies gas to a processing chamber in which a sample is processed. The gas supply apparatus includes: ports respectively connected to gas sources of a plurality of types of gases containing a purging gas and a processing gas; and a collective pipe in which the plurality of types of gases supplied from the ports are joined and flowed. A gas flow path through which gas supplied from the port connected to the gas source for the purging gas flows is formed on an uppermost stream side of the collective pipe.

Abstract: Provided is a detecting device of gas components that includes a gas component detecting unit for detection of a light emission of plasma that is formed by re-excitation downstream of an arrangement position of an object to be processed.

Abstract: Provided is a detecting device of gas components that includes a gas component detecting unit for detection of a light emission of plasma that is formed by re-excitation downstream of an arrangement position of an object to be processed.

Abstract: A facility device includes a sensor which includes a light transmitting unit that transmits an optical signal and a light receiving unit that receives a reflected signal which is the optical signal transmitted from the light transmitting unit, reached a target object, and reflected, the light receiving unit transmitting a detection signal on the basis of the received reflected signal; and a panel which is arranged at a position in a first direction from the sensor. A display portion is provided on the panel, the display portion being configured to guide the target object to be placed at a predetermined position. The light transmitting unit includes a first light transmitting unit that is arranged to be capable of being directed toward a location which is in the first direction from the display portion. The display portion is arranged adjacent to the sensor in a front view of the facility device.

Abstract: The present invention provides a vacuum processing apparatus that includes gas supply means having a hard interlock of a pair of gas valves. The present invention provides a vacuum processing apparatus including: a gas supply unit that supplies gas, for performing vacuum processing using normally closed type air-driven valves, to a processing chamber where the vacuum processing is performed, the gas supply unit having an interlock function in which, when a first valve of a pair of the air-driven valves is opened, a second valve of the pair is closed, the gas supply unit including an air circuit that controls air for driving the air-driven valves, the air circuit being configured using an electromagnetic valve having a solenoid coil corresponding to each of the pair of the air-driven valves.

Abstract: The present invention provides a vacuum processing apparatus that includes gas supply means having a hard interlock of a pair of gas valves. The present invention provides a vacuum processing apparatus including: a gas supply unit that supplies gas, for performing vacuum processing using normally closed type air-driven valves, to a processing chamber where the vacuum processing is performed, the gas supply unit having an interlock function in which, when a first valve of a pair of the air-driven valves is opened, a second valve of the pair is closed, the gas supply unit including an air circuit that controls air for driving the air-driven valves, the air circuit being configured using an electromagnetic valve having a solenoid coil corresponding to each of the pair of the air-driven valves.

Abstract: A plasma processing apparatus includes at least three gas supply lines connected to a process chamber in parallel to allow a gas to flow therethrough, and at least three flow-rate controllers provided on the gas supply lines to detect the flow rate of the gas flowing through each of the flow-rate controllers to control the flow rate to a set value and a diagnosis method. The apparatus has a function of splitting and supplying a gas controlled to a predetermined flow rate by the third flow-rate controller, to a first flow-rate controller for the smallest detectable range of the three flow-rate controllers and to a second flow-rate controller, in order to test the operation of the control of the flow rate of the first flow-rate controller, based on the value obtained from the flow rate of the gas flowing through the second flow-rate controller and the predetermined flow rate.

Abstract: A vacuum processing apparatus includes a row of containers of vacuum transfer chambers connected to each other behind a lock chamber, a wafer being transferred through depressurized inside of the row of the containers of the vacuum transfer containers, an intermediate chamber disposed between the containers of the vacuum transfer chambers, a plurality of processing units including processing containers respectively connected to left or right side walls of the containers of the vacuum transfer chambers and the wafer is processed therein, and a bypass chamber which constitutes a bypass path connecting the processing units, where only either the wafer which is being transferred from the lock chamber toward one of the processing units or the wafer which was processed in one of the processing units and is being transferred toward the lock chamber is transferred through the containers of the vacuum transfer chambers.

Abstract: A plasma processing apparatus includes at least three gas supply lines connected to a process chamber in parallel to allow a gas to flow therethrough, and at least three flow-rate controllers provided on the gas supply lines to detect the flow rate of the gas flowing through each of the flow-rate controllers to control the flow rate to a set value and a diagnosis method. The apparatus has a function of splitting and supplying a gas controlled to a predetermined flow rate by the third flow-rate controller, to a first flow-rate controller for the smallest detectable range of the three flow-rate controllers and to a second flow-rate controller, in order to test the operation of the control of the flow rate of the first flow-rate controller, based on the value obtained from the flow rate of the gas flowing through the second flow-rate controller and the predetermined flow rate.

Abstract: A vacuum processing apparatus includes a row of containers of vacuum transfer chambers connected to each other behind a lock chamber, a wafer being transferred through depressurized inside of the row of the containers of the vacuum transfer containers, an intermediate chamber disposed between the containers of the vacuum transfer chambers, a plurality of processing units including processing containers respectively connected to left or right side walls of the containers of the vacuum transfer chambers and the wafer is processed therein, and a bypass chamber which constitutes a bypass path connecting the processing units, where only either the wafer which is being transferred from the lock chamber toward one of the processing units or the wafer which was processed in one of the processing units and is being transferred toward the lock chamber is transferred through the containers of the vacuum transfer chambers.

Abstract: A method and system of holding a substrate to decrease foreign substances on the back surface thereof. The substrate holding system includes a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface thereof to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: Present invention provides a method of holding substrate and a substrate holding system where the amount of foreign substances on the back surface can be decreased, and a little amount of foreign substances may be transferred from a mounting table to a substrate. The substrate holding system comprises a ring-shaped leakage-proof surface having smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic ttraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.