Abstract: A deposition apparatus for forming a thin film by depositing material particles separated from a deposition material on a deposition object by irradiation with a plasma supplied from a plasma generator into a chamber including a hearth accommodating the deposition material, and a capturing mechanism installed near the hearth and outside the range of a moving region of the material particles moving toward the deposition object. The moving region is determined by a width in an incident direction in which the plasma is incident on the deposition material, and the width of the deposition object 10. The capturing mechanism captures at least some material particles separated from the deposition material and existing outside the range of the moving region.

Abstract: A sputtering apparatus is equipped with a vacuum enclosure 11, a pumping mechanism 18 that evacuates the interior of the vacuum enclosure, magnetron cathodes 12a and 12b to which are attached targets 14, a gas feed mechanism 19 that feeds sputtering gas, and a substrate transfer mechanism. An electrical discharge is generated in the vicinity of the targets, thereby sputtering the targets, and sputter deposition is performed on substrates 15 that pass by facing onto the target surfaces. The magnetron cathodes are equipped with magnetron magnetic circuits 32, which are able to move, and the magnetron magnetic circuits are equipped with magnetron reciprocating mechanisms 33 including a left-right reciprocating part that reciprocates in the substrate transfer direction, which is parallel to the target surface, and an up-down reciprocating part that reciprocates in a direction perpendicular to the substrate transfer direction.