Patents by Inventor Yoshifumi Yatsurugi
Yoshifumi Yatsurugi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 6623801Abstract: In producing rod-form high-purity polycrystalline silicon by depositing silicon on a silicon core by the thermal decomposition of a silane gas, the occurrence of defects near the interface of the silicon core and polycrystalline silicon newly deposited thereon is prevented. A silicon core before depositing silicon thereon is subjected to a hydrogen treatment. In this case, the treatment temperature and the treatment time are controlled according to the dew point of the hydrogen gas. After the hydrogen treatment, the hydrogen gas in a reactor may be replaced with a high-purity hydrogen gas, followed by producing a polycrystalline silicon by a silane gas.Type: GrantFiled: July 30, 2001Date of Patent: September 23, 2003Assignee: Komatsu Ltd.Inventors: Shinichiro Inoue, Yoshifumi Yatsurugi
-
Publication number: 20030021894Abstract: In producing rod-form high-purity polycrystalline silicon by depositing silicon on a silicon core by the thermal decomposition of a silane gas, the occurrence of defects near the interface of the silicon core and polycrystalline silicon newly deposited thereon is prevented. A silicon core before depositing silicon thereon is subjected to a hydrogen treatment. In this case, the treatment temperature and the treatment time are controlled according to the dew point of the hydrogen gas. After the hydrogen treatment, the hydrogen gas in a reactor may be replaced with a high-purity hydrogen gas, followed by producing a polycrystalline silicon by a silane gas.Type: ApplicationFiled: July 30, 2001Publication date: January 30, 2003Applicant: Komatsu Ltd.Inventors: Shinichiro Inoue, Yoshifumi Yatsurugi
-
Patent number: 6503563Abstract: A rod-form high-purity polycrystalline silicon capable of preventing defects from occurring to a newly deposited silicon layer. To this end, a method of producing a rod-form high-purity polycrystalline silicon, depositing silicon on a rod-form silicon core by a thermal decomposition of a silane gas includes the steps of coating the rod-form silicon core to be used with a specific silicon layer by previously depositing any one kind of silicon layer of an amorphous silicon layer and a polycrystalline silicon layer made up of fine particles of silicon with different crystal axes from one another on a surface of the rod-form silicon core to be used by vapor growth, and depositing polycrystalline silicon by using the core coated with the specific silicon layer.Type: GrantFiled: October 9, 2001Date of Patent: January 7, 2003Assignee: Komatsu Ltd.Inventors: Yoshifumi Yatsurugi, Shinichiro Inoue
-
Patent number: 6106617Abstract: A method of an apparatus for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. After a draining hose 203 is disposed in a quartz crucible 201, pure water is supplied from a water supply hose 204, and the quartz crucible 201 is conveyed onto a turn table 213 installed under a container 210. At this time, the quartz crucible 201 is rotated, and lump raw material 209 is fed into the quartz crucible 201. Since buoyancy of the pure water is applied to the lump material 209, impacts caused by the falling lump material can be moderated, and therefore, damages to the quartz crucible 201 can be prevented. After feeding raw material is finished, the pure water is discharged through a draining hose 203, and then the draining hose 203 is retracted from the quartz crucible 201. Thereafter, the quartz crucible 201 is conveyed into a microwave oven 211 for drying.Type: GrantFiled: February 2, 1998Date of Patent: August 22, 2000Assignee: Komatsu Electronic Metals Co., Ltd.Inventor: Yoshifumi Yatsurugi
-
Patent number: 6019842Abstract: The process of manufacturing silicon single crystals by the CZ method is significantly improved by the present apparatus wherein raw material (polycrystalline silicon) is automatically loaded into a quartz crucible. After a protection sheet (15) is employed to cover the inner side wall of the container (3), which has an inner diameter smaller than that of the quartz crucible (10), a present amount of polycrystalline silicon (17) is loaded from the loading means (6) into the container (3). The container (3) is then filled with pure water that is thereafter frozen into an ice block (22). Subsequently, the ice block (22) is raised up from the container (3). Thereafter, the protection sheet (15) is removed from the ice block (22) and the ice block (22) is loaded into the quartz crucible (10). The ice block (22) is then caused to melt and the quartz crucible (10) and polycrystalline silicon are caused to dry up. The above operations are performed by the conveying apparatus (1).Type: GrantFiled: September 9, 1998Date of Patent: February 1, 2000Assignee: Komatsu Electronics Metals Co., Ltd.Inventor: Yoshifumi Yatsurugi
-
Patent number: 6007621Abstract: The invention is to provide a method for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. For example, after a draining hose 203 is disposed in a quartz crucible 201, pure water is supplied from a water supply hose 204, and the quartz crucible 201 is conveyed onto a turn table 213 installed under a container 210. At this time, the quartz crucible 201 is rotated, and lump raw material 209 is fed into the quartz crucible 201. Since buoyancy of the pure water is applied to the lump material 209, impacts caused by the falling lump material can be moderated, and therefore, damages to the quartz crucible 201 can be prevented. After feeding raw material is finished, the pure water is discharged through a draining hose 203, and then the draining hose 203 is retracted from the quartz crucible 201. Thereafter, the quartz crucible 201 is conveyed into a microwave oven 211 for drying.Type: GrantFiled: September 22, 1998Date of Patent: December 28, 1999Assignee: Komatsu Elctronic Metals Co., Ltd.Inventor: Yoshifumi Yatsurugi
-
Patent number: 5545387Abstract: Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.Type: GrantFiled: June 7, 1995Date of Patent: August 13, 1996Assignee: Advanced Silcon Materials, Inc.Inventors: David W. Keck, Kenichi Nagai, Yoshifumi Yatsurugi, Hiroshi Morihara, Junji Izawa
-
Patent number: 5478396Abstract: Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.Type: GrantFiled: August 26, 1994Date of Patent: December 26, 1995Assignee: Advanced Silicon Materials, Inc.Inventors: David W. Keck, Kenichi Nagai, Yoshifumi Yatsurugi, Hiroshi Morihara, Junji Izawa
-
Patent number: 4857270Abstract: A process for manufacturing a silicon-germanium alloy comprising introducing SiH.sub.4 gas, GeCl.sub.4 gas and P-type or N-type doping gas into a reaction vessel, heating a substrate up to a temperature not lower than 750.degree. C., and depositing a thickly-grown, bulky silicon-germanium alloy upon the substrate within the reaction vessel.Type: GrantFiled: April 20, 1988Date of Patent: August 15, 1989Assignee: Komatsu Electronic Metals Co., Ltd.Inventors: Shinji Maruya, Yoshifumi Yatsurugi, Kazuya Togashi
-
Patent number: 4565913Abstract: A method for the disintegration of silicon for preparation of semiconductor materials. Polycrystalline silicon in a rod form is subjected to microwave radiation in an oven for a short period of time, whereby the rod-like polycrystalline silicon is dielectrically heated quickly from its inside thereby causing it to be disintegrated.Type: GrantFiled: July 12, 1984Date of Patent: January 21, 1986Assignee: Komatsu Electronic Metals Co., Ltd.Inventors: Yoshifumi Yatsurugi, Meiseki Katayama
-
Patent number: 4150168Abstract: A method of manufacturing high-purity silicon rods by subjecting a silicon compound to pyrolysis on a plurality of rod-shaped high-purity silicon carrier members which have been red-heated by directly passing an electric current therethrough thereby depositing high-purity silicon thereon, characterized in that monosilane supplied into a pyrolysis container is subjected to pyrolysis or thermal decomposition on said red-heated carrier members while insulating the radiant heat between said red-heated carrier members along the overall length thereof.Type: GrantFiled: March 2, 1978Date of Patent: April 17, 1979Assignee: Kabushiki Kaisha Komatsu SeisakushoInventors: Yoshifumi Yatsurugi, Atsushi Yusa, Nagao Takahashi
-
Patent number: 4147814Abstract: A method of manufacturing high-purity silicon rods having a uniform sectional shape by thermally decomposing monosilane on a plurality of rod-shaped silicon carrier members which have been red-heated by directly passing an electric current therethrough, said silicon carrier members being thermally insulated from one another, characterized in that monosilane is supplied into a pyrolysis container through multi-stage monosilane supply ports located in parallel with the axes of said silicon carrier members held vertically within the pyrolysis container, and that the amount of supply of monosilane through the upper supply ports is increased as compared with that through the lower supply ports in response to the increase of the diameter of each of said silicon rods.Type: GrantFiled: March 2, 1978Date of Patent: April 3, 1979Assignee: Kabushiki Kaisha Komatsu SeisakushoInventors: Yoshifumi Yatsurugi, Atsushi Yusa, Nagao Takahashi
-
Patent number: 3982912Abstract: A novel type of zeolite is obtained by replacing ion-exchangeable active cations in A-type zeolite with potassium ions and divalent cations at 33.3 to 83.3% and 16.7 to 66.7%, respectively to combine into the total of 100%. This zeolite is effective for separation of a mixture consisting of non-polar molecules and polar molecules having the adsorption effective cross-section less than 5 A. For instance, monosilane and phosphine, both of which are adsorbed by the conventional Ca--A type zeolite, can be separated by the novel K--A type zeolite which adsorbs phosphine.Type: GrantFiled: May 6, 1974Date of Patent: September 28, 1976Inventors: Yoshifumi Yatsurugi, Tatsuo Kuratomi, Tetsuo Takaishi
-
Patent number: RE36936Abstract: Disclosed are .[.a.]. processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.Type: GrantFiled: August 13, 1998Date of Patent: October 31, 2000Assignee: Advanced Silicon Materials, Inc.Inventors: David W. Keck, Kenichi Nagai, Yoshifumi Yatsurugi, Hiroshi Morihara, Junji Izawa, Renzin Paljor Yuthok