Abstract: Provided is a photodetector including: an organic semiconductor (20) having protrusions; a metal layer (30) added onto the organic semiconductor (20), for promoting at least one of localized plasmon resonance and surface plasmon resonance in which electrons are excited through irradiation of detection light; and a semiconductor (40) forming a junction with the metal layer (30), for allowing electrons excited through the plasmon resonance to pass through the junction (40a) with the metal layer (30).

Abstract: Provided is a photodetector including: an organic semiconductor (20) having protrusions; a metal layer (30) added onto the organic semiconductor (20), for promoting at least one of localized plasmon resonance and surface plasmon resonance in which electrons are excited through irradiation of detection light; and a semiconductor (40) forming a junction with the metal layer (30), for allowing electrons excited through the plasmon resonance to pass through the junction (40a) with the metal layer (30).

Abstract: A secondary battery that can avoid reduction in battery capacity over the lapse of charge-discharge cycles and can exhibit high performance is provided. The secondary battery includes a first electrode layer, a second electrode layer, and an electrolyte layer provided between the first and second electrode layers, the electrolyte layer including electrolyte particles, wherein at least one of the first and second electrode layers includes a base member having a major surface on which a plurality of concave portions are formed and an electrode material filled in at least the concave portions, the major surface facing to the electrolyte layer.

Abstract: A photoelectric conversion device provided with an electron transport layer having an excellent electron transport ability and having an excellent photoelectric conversion efficiency, and electronic equipment provided with such a photoelectric conversion device and having a high reliability are provided. A solar cell, to which the photoelectric conversion device is applied, has a first electrode provided on a substrate, a second electrode arranged opposite to the first electrode and retained on a facing substrate, an electron transport layer provided between these electrodes and positioned on the side of the first electrode, a dye layer being in contact with the electron transport layer, and an electrolyte layer provided between the electron transport layer and the second electrode and being in contact with the dye layer. The electron transport layer includes particles of sodium trititanate.

Abstract: A photoelectric conversion device provided with an electron transport layer having an excellent electron transport ability and having an excellent photoelectric conversion efficiency, and electronic equipment provided with such a photoelectric conversion device and having a high reliability are provided. A solar cell, to which the photoelectric conversion device is applied, has a first electrode provided on a substrate, a second electrode arranged opposite to the first electrode and retained on a facing substrate, an electron transport layer provided between these electrodes and positioned on the side of the first electrode, a dye layer being in contact with the electron transport layer, and an electrolyte layer provided between the electron transport layer and the second electrode and being in contact with the dye layer. The electron transport layer includes particles of sodium trititanate.

Abstract: A photoelectric conversion device provided with an electron transport layer having an excellent electron transport ability and having an excellent photoelectric conversion efficiency, and electronic equipment provided with such a photoelectric conversion device and having a high reliability are provided. A solar cell, to which the photoelectric conversion device is applied, has a first electrode provided on a substrate, a second electrode arranged opposite to the first electrode and retained on a facing substrate, an electron transport layer provided between these electrodes and positioned on the side of the first electrode, a dye layer being in contact with the electron transport layer, and an electrolyte layer provided between the electron transport layer and the second electrode and being in contact with the dye layer. The electron transport layer is constituted of a monocrystalline material of multiple oxide as a main component thereof.

Abstract: Provided is a scanning near-field optical microscope capable of obtaining, in a highly sensitive manner, optical information having a spatial frequency higher than a spatial frequency corresponding to a wavelength of irradiation light. A scanning near-field optical microscope 100 according to the present invention includes: a light irradiating part 102 for emitting illumination light toward a sample 107; a light receiving part 112 for receiving light; a microstructure for generating or selectively transmitting near-field light, the microstructure being disposed on at least one of an emission side of the light irradiating part 102 and an incident side of the light receiving part 112; and an ultrahigh-wavenumber transmitting medium 108 for transmitting near-field light, the ultrahigh-wavenumber transmitting medium exhibiting anisotropy in permittivity or permeability.

Abstract: An ultrahigh-wavenumber transmitting element has at least two anisotropic media having slopes of isofrequency curves complementary with each other. The at least two anisotropic media are layered so as to transmit ultrahigh wavenumber.

Abstract: A photoelectric conversion device provided with an electron transport layer having an excellent electron transport ability and having an excellent photoelectric conversion efficiency, and electronic equipment provided with such a photoelectric conversion device and having a high reliability are provided. A solar cell, to which the photoelectric conversion device is applied, has a first electrode provided on a substrate, a second electrode arranged opposite to the first electrode and retained on a facing substrate, an electron transport layer provided between these electrodes and positioned on the side of the first electrode, a dye layer being in contact with the electron transport layer, and an electrolyte layer provided between the electron transport layer and the second electrode and being in contact with the dye layer. The electron transport layer is constituted of a monocrystalline material of multiple oxide as a main component thereof.

Abstract: Provided is a scanning near-field optical microscope capable of obtaining in a highly sensitive manner, optical information having a spatial frequency higher than a spatial frequency corresponding to a wavelength of irradiation light. A scanning near-field optical microscope 100 according to the present invention includes: a light irradiating part 102 for emitting illumination light toward a sample 107; a light receiving part 112 for receiving light; a microstructure for generating or selectively transmitting near-field light, the microstructure being disposed on at least one of an emission side of the light irradiating part 102 and an incident side of the light receiving part 112; and an ultrahigh-wavenumber transmitting medium 108 for transmitting near-field light, the ultrahigh-wavenumber transmitting medium exhibiting anisotropy in permittivity or permeability.

Abstract: A battery device includes a photoelectric conversion device and a secondary battery. The photoelectric conversion device includes a first positive electrode, a first negative electrode, and a photoelectric conversion layer provided between the first positive electrode and the first negative electrode, the photoelectric conversion layer including an inorganic semiconductor and a pigment. The secondary battery includes a second positive electrode, a second negative electrode, and an electrolyte layer provided between the second positive electrode and the second negative electrode. Here, one of a first electrode pair and a second electrode pair is adhered directly, the first electrode pair including the first and the second positive electrodes, and the second electrode pair including the first and the second negative electrodes.

Abstract: A blood-pressure sensor is constituted of an elastic body which is fitted to a blood-vessel outer wall, and a shape of which is deformed by force generated by pulsing motion of expansion and contraction of the blood vessel, and a plurality of nanosized particles dispersedly provided in the elastic body, and when the force is applied to the sensor in a state where the sensor is irradiated with light, the magnitude of the force is measured on the basis of intensity of scattered light from the particles or emission intensity of fluorescence from the particles, the intensity of the scattered light or emission intensity of the fluorescence corresponding to a change in distance between the particles.

Abstract: There is provided a blood-pressure sensor system wherein a blood-pressure sensor including a plurality of structures which induces surface plasmon resonance on a light-receiving plane of a photoelectric conversion element is attached to an outer wall of a blood vessel, in which if the blood-pressure sensor is deformed according to expansion or contraction of the blood vessel, an interval of layout of the structure is changed (widened or narrowed), so that an incident form of light with respect to the structures is changed to cause the output from the photoelectric conversion element to be changed. The output is measured as an open circuit voltage, and index calculation is performed, so that a blood pressure value is measured.

Abstract: A semiconductor device includes a semiconductor layer, and a first transistor and a second transistor that are formed using the semiconductor layer, wherein each conductance of the first and second transistors changes complementarily to each other according to a curvature of the semiconductor layer.

Abstract: A booster circuit includes a first transistor performing a first on-off operation based on a first control signal and a second transistor performing a second on-off operation based on the first control signal. The first on-off operation and the second on-off operation are reversed. A third transistor performs the first on-off operation based on a second control signal. The second control signal has a phase opposite the first control signal. A fourth transistor is included in a metal oxide semiconductor capacitor.

Abstract: A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect transistor provided on the supporting substrate becomes warpable in a channel direction.

Abstract: A method for manufacturing a solar cell having a single crystal silicon substrate and an amorphous silicon layer provided at least on one side surface of the single crystal silicon substrate is provided. The method includes the steps of: (a) forming an intrinsic amorphous silicon layer by coating a first liquid containing silicon atoms on one surface of the single crystal silicon substrate, and sintering the first liquid coated; and (b) forming an impure amorphous silicon layer on the intrinsic amorphous silicon layer.

Abstract: A semiconductor device includes a transistor that is used for a charge pump circuit, being configured with a fully depleted silicon-on-insulator transistor.

Abstract: A first gas flow path is formed in a first substrate. The first substrate is processed in an ejection device to form a first collector layer, a first gas diffusion layer, a first reactive layer, and an electrolyte membrane. Similarly, the first substrate is processed to form a second reactive layer, a gas diffusion layer, and a second collector layer. A second substrate which has been processed to form a second gas flow path is then disposed on the first substrate to complete production of a fuel cell having a gas flow path formed therein the opening width of which is smaller than the particle diameter of the material constituting the gas diffusion layer.

Abstract: A semiconductor device includes a transistor that is used for a charge pump circuit, being configured with a fully depleted silicon-on-insulator transistor.