Abstract: A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices.

Abstract: A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi2 (where M: refractory metal) grains and Si grains, wherein the number of MSi2 grains independently existing in a cross section of 0.01 mm2 of the mixed structure is not greater than 15, the MSi2 grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi2 grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Abstract: A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi2 (where M: refractory metal) grains and Si grains, wherein the number of MSi2 grains independently existing in a cross section of 0.01 mm2 of the mixed structure is not greater than 15, the MSi2 grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi2 grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Abstract: A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi2 (where M: refractory metal) grains and Si grains, wherein the number of MSi2 grains independently existing in a cross section of 0.01 mm2 of the mixed structure is not greater than 15, the MSi2 grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi2 grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Abstract: A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices.

Abstract: A Mo-W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo-W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo-W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo-W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices.

Abstract: A film forming apparatus such as a sputtering apparatus, a vacuum evaporation apparatus, or a CVD apparatus, having a film forming substrate and a film forming source both arranged within a film forming chamber, for forming a thin film on the film forming substrate. This film forming apparatus has within the film forming chamber a apparatus part other than the film forming substrate on which a component of the film forming source, e.g., a target, is deposited. At least on the surface of the apparatus part on which the component of the film forming source is deposited is composed of a material whose thermal expansion coefficient is equal or close to that of the thin film to be formed. Even if the component of the film forming source forms a deposition on the apparatus part other than the film forming substrate, the separation of such a deposition due to a thermal stress can be controlled because the thermal expansion coefficients of the deposition and apparatus part are equal or close to each other.

Abstract: The present invention consists of a sputtering target wherein target pieces made of at least two different kinds of materials are compositely arrayed in a manner as to be divided into the respective materials, characterized by having at least one irregular erosion region which is defined as a region enclosed with a circle having an erosion width as its diameter, located at a region farthest from the center of gravity of the sputtering target within a region to be eroded in a curvilinear shape, the irregular erosion region being formed at least partly of target pieces made of at least two kinds of materials having either shapes or surface areas thereof different from those of the target pieces lying outside the irregular erosion region and are compositely arrayed in a manner as to be divided into the respective materials.

Abstract: A sputtering target divided into respective target elements of two or more types arranged as a composite on a substrate, is disclosed. A thin sheet whose constituent material comprises one or more of the constituent materials of the target elements, and whose constituent material includes at least one metal material, is interposed between said substrate and target elements.

Abstract: The present invention is a sputtering target for formation of an alloy film, which comprises 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities, which can provide electrical wiring having very low specific resistance as well as excellent workability and stability, whereby high definition and high integration of various elements such as semiconductor devices can be achieved. In consequence, it is fair to say that this invention is industrially very useful.

Abstract: Disclosed is a sputtering target which comprises a single block composed of one or more of metals prepared by a melting process or an alloy thereof; a combined block of the plural single blocks; or a combined block of the single blocks and silicon blocks; an average size of the crystal grains of the metal or the alloy being between 1 .mu.m and 1 mm.

Abstract: A molybdenum board which has excellent strength at high temperatures. The molybdenum board consists essentially of molybdenum recrystallized grains having a ratio L/W (L: length; W: width) of 2 or more and the width W of 5 to 1,000 .mu.m and containing 0.005 to 0.75% by weight of at least one element selected from Al, Si and K.