Abstract: An etching solution includes: phosphoric acid having concentration of 30% by weight to 80% by weight; nitric acid having concentration of 10% by weight or less; and surfactant having concentration of 0.0005% by weight to 0.0050% by weight, wherein the etching solution is used for etching an aluminum oxide film having film density of 2.80 g/cm3 to 3.25 g/cm3.

Abstract: An etching solution includes: phosphoric acid having concentration of 30% by weight to 80% by weight; nitric acid having concentration of 10% by weight or less; and surfactant having concentration of 0.0005% by weight to 0.0050% by weight, wherein the etching solution is used for etching an aluminum oxide film having film density of 2.80 g/cm3 to 3.25 g/cm3.

Abstract: An EL display has a luminescence unit having a luminescence layer being disposed between the pair of electrodes, and a transistor array unit controlling the luminescence of the luminescence unit. An interlayer insulating film is disposed between the luminescence unit and the transistor array unit. An electrode of the luminescence unit is connected electrically to the transistor array unit via a contact hole provided in the interlayer insulation film. The transistor array unit has a wiring component made of copper or copper alloy. The wiring component has a lower layer pattern made of copper or copper alloy, and an upper layer pattern made of metal material different from that for the lower layer pattern. The upper layer pattern covers the upper surface and the side surface of the lower layer pattern.

Abstract: In a production method for a semiconductor device relating to the present invention, first, a pattern of a resist film made of organic polymers is formed on a semiconductor substrate. Next, impurity ions with 1×1014 cm?2 or greater of dose amount are implanted into the semiconductor substrate using the resist film pattern as a mask. The resist film pattern mask is removed sequentially through an oxidation treatment, swelling treatment and removal treatment. In the oxidation treatment, a treatment to oxidize a hardened layer formed in a surface portion of the resist film pattern by the ion implantation is implemented. In the swelling treatment, a treatment to swell the organic polymers composing the resist film pattern where the hardened layer has been oxidized using a chemical solution is implemented. In the removal treatment, the swollen resist film pattern is removed using the chemical solution used for the swelling treatment.

Abstract: A method for fabricating a semiconductor device, includes the steps of (a) forming a metal film containing a precious metal on a substrate having a semiconductor layer containing silicon or on a conductive film containing silicon formed on the substrate, (b) after step (a), heat-treating the substrate to allow the precious metal to react with silicon to form a silicide film containing the precious metal on the substrate or the conductive film, (c) after step (b), forming an oxide film on a portion of the silicide film underlying an unreacted portion of the precious metal using a first chemical solution, and (d) dissolving the unreacted portion of the precious metal using a second chemical solution.

Abstract: A method for fabricating a semiconductor device includes the steps of: (a) forming an alloy film containing a precious metal on a substrate having a semiconductor layer or on a conductive film formed on the substrate; (b) heat-treating the substrate to allow the precious metal to react with silicon forming a silicide film containing the precious metal on the substrate or the conductive film; (c) removing an unreacted portion of the alloy film with a first chemical solution after the step (b); (d) forming a silicon oxide film on the top surface of the silicide film including a portion underlying a residue of the precious metal by exposing the substrate to an oxidative atmosphere; and (e) dissolving the residue of the precious metal with a second chemical solution.

Abstract: The step a) of forming a noble metal film or a metal film containing a noble metal on a semiconductor substrate containing silicon or a conductive film containing silicon is performed, the step b) of forming a silicide film containing a noble metal on the semiconductor substrate or the conductive film is performed, after the step a), by performing thermal treatment to the semiconductor substrate, the step c) of activating unreacted part of the noble metal using a first chemical solution is performed after the step b), and the step d) of dissolving the unreacted part of the noble metal activated in the step c) is performed. The step d) is performed within 30 minutes or less after the step c).

Abstract: A semiconductor substrate is inserted into a heat treatment apparatus at a low temperature ranging from room temperature to about 50° C., and organic substances included in a metal on the semiconductor substrate are released without carbonization in an annealing process before CMP. Further, organic substances capable of preventing the corrosion of the metal are decomposed, and the organic substances themselves and chlorine, sulfuric acid, and ammonia which are included in the organic substances are diffused out of the metal film by setting the heat treatment apparatus at a rate of temperature rise of 15° C./min or less until a prescribed heat treatment temperature is reached.

Abstract: In a semiconductor substrate having a notch in an edge portion thereof, each of the two shoulder portions of the notch is configured as an arc and the difference in curvature between the two shoulder portions of the notch is not less than 0 mm and not more than 0.1 mm.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: In a semiconductor substrate having a notch in an edge portion thereof, each of the two shoulder portions of the notch is configured as an arc and the difference in curvature between the two shoulder portions of the notch is not less than 0 mm and not more than 0.1 mm.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: In a semiconductor substrate having a notch in an edge portion thereof, each of the two shoulder portions of the notch is configured as an arc and the difference in curvature between the two shoulder portions of the notch is not less than 0 mm and not more than 0.1 mm.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Abstract: Broadband switching networks are disclosed, which has a plurality of broadband switch nodes and a broadband switch inter-node transmission line for connecting the plurality of broadband switch nodes, information being transmitted by cells, each of which comprises a header and an information field, wherein the broadband switch node comprises a broadband input and output port for inputting and outputting the cells to and from the broadband inter-node transmission line, and a switch for separating the cells being input through the broadband input and output port and for multiplexing the cells so as to output them, wherein data composed of the plurality of cells is transmitted and received through the broadband switch node by constant bit rate transmission, variable bit rate transmission, or a combination of the constant bit rate transmission and the variable bit rate transmission.

Abstract: A semiconductor substrate is inserted into a heat treatment apparatus at a low temperature ranging from room temperature to about 50° C., and organic substances included in a metal on the semiconductor substrate are released without carbonization in an annealing process before CMP. Further, organic substances capable of preventing the corrosion of the metal are decomposed, and the organic substances themselves and chlorine, sulfuric acid, and ammonia which are included in the organic substances are diffused out of the metal film by setting the heat treatment apparatus at a rate of temperature rise of 15° C./min or less until a prescribed heat treatment temperature is reached.

Abstract: A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.