Abstract: A surface treatment composition of the present invention is a surface treatment composition that are supplied as a vapor to a surface of a wafer having an uneven pattern on the surface and used to form a water-repellent protective film on the surface, the surface treatment composition containing a silylating agent and a solvent, in which the silylating agent contains a trialkylsilylamine, the solvent contains at least one or more selected from the group consisting of glycol ether acetate and glycol acetate, and a total content of the glycol ether acetate and the glycol acetate is 50% by mass or more in 100% by mass of a total amount of the solvent.

Abstract: A bevel portion treatment agent composition of the present invention is a bevel portion treatment agent composition containing a silylating agent, which is used for treating a bevel portion of a wafer, in which a surface modification index Y and a surface modification index Z measured by a predetermined procedure have a characteristic of satisfying 0.5?Y/Z?1.0.

Abstract: A surface treatment method for semiconductor substrates of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a bevel region which is formed on a periphery of the pattern formation region, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the bevel region on the main surface of the semiconductor substrate, in which, with respect to a surface of a silicon oxide substrate brought into contact with the surface treatment agent composition, an IPA receding contact angle is 3° or more at a room temperature of 25° C., and/or a water receding contact angle is 40° or more at the room temperature of 25° C.

Abstract: A surface treatment method for a semiconductor substrate of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a pattern non-formation region in which no pattern is formed, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the pattern non-formation region on the main surface of the semiconductor substrate, in which, with respect to a surface of the pattern non-formation region after the surface treatment step, an IPA contact angle with 2-propanol is 2° or more at a room temperature of 25° C. and/or a water contact angle with pure water is 50° or more at the room temperature of 25° C.

Abstract: According to the present disclosure, there are provided a surface treatment agent having the advantage that the raw material components can be dissolved in a short time during preparation of the surface treatment agent and capable of exerting a good water repellency imparting effect, and a method of manufacturing a surface-treated body with the use of the surface treatment agent. The surface treatment agent according to the present disclosure includes the following components: (I) at least one kind selected from the group consisting of silicon compounds represented by the following general formulas [1], [2] and [3]; (II) at least one kind selected from the group consisting of a nitrogen-containing heterocyclic compound represented by the following general formula [4], a nitrogen-containing heterocyclic compound represented by the following general formula [5], and imidazole; and (III) an organic solvent.

Abstract: The sublimable film formation composition of the present invention includes a sublimable substance and a solvent in which a saturation solubility of the sublimable substance is more than 10% by mass.

Abstract: A surface treatment method of a Si element-containing wafer including, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming component and a solvent in a state that a liquid is retained in at least the recess portion of the uneven pattern, changing the vapor of the composition into a liquid and replacing the liquid retained in the recess portion with the liquid of the composition. The water-repellent protective film-forming component consists of a compound of formula [1], and the solvent contains at least an acyclic carbonate. R1x(CH3)3-xSiN(R2)2??[1] R1 is selected from the group consisting of a H and a C1-C10 hydrocarbon group; x is an integer of 1 to 3; and R2 is each independently a group selected from the group consisting of methyl, ethyl and acetyl.

Abstract: Please substitute the new Abstract submitted herewith for the original Abstract: The present disclosure provides a surface treatment agent capable of not only being prepared by dissolving raw materials in a short time but also exerting a good water repellency imparting effect, and a method for manufacturing a surface treated body with the use of the surface treatment agent.

Abstract: The composition for drying an uneven pattern of the present invention includes a sublimable substance, and a solvent whose boiling point at 1 atm is lower than a boiling point or a sublimation point of the sublimable substance by 5° C. or more and whose boiling point at 1 atm is 75° C. or lower.

Abstract: According to the present disclosure, there is provided a water-repellent protective film-forming liquid chemical capable of achieving an improved water repellency imparting effect. The water-repellent protective film-forming liquid chemical according to the present disclosure contains the following compositions: (I) an aminosilane composition of the following general formula [1]; (II) a silicon compound of the following general formula [2]; and (III) an aprotic solvent, wherein the amount of the component (I) contained is 0.02 to 0.5 mass % based on the total amount of the components (I) to (III).

Abstract: A bevel portion treatment agent composition of the present invention is a bevel portion treatment agent composition containing a silylating agent, which is used for treating a bevel portion of a wafer, in which a surface modification index Y and a surface modification index Z measured by a predetermined procedure have a characteristic of satisfying 0.5?Y/Z?1.0.

Abstract: According to the present disclosure, there are provided a surface treatment agent having the advantage that the raw material components can be dissolved in a short time during preparation of the surface treatment agent and capable of exerting a good water repellency imparting effect, and a method of manufacturing a surface-treated body with the use of the surface treatment agent. The surface treatment agent according to the present disclosure includes the following components: (I) at least one kind selected from the group consisting of silicon compounds represented by the following general formulas [1], [2] and [3]; (II) at least one kind selected from the group consisting of a nitrogen-containing heterocyclic compound represented by the following general formula [4], a nitrogen-containing heterocyclic compound represented by the following general formula [5], and imidazole; and (III) an organic solvent.

Abstract: Disclosed is a surface treatment method of a Si element-containing wafer having an uneven pattern at a surface thereof, the surface treatment method comprising, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming component and a solvent to the uneven pattern in a state that a liquid is retained in at least the recess portion of the uneven pattern, changing the vapor of the composition into a liquid and replacing the liquid retained in the recess portion with the liquid of the composition, wherein the water-repellent protective film-forming component consists of a compound of the following general formula [1], and wherein the solvent contains at least an acyclic carbonate in an amount of 50 to 100 mass % based on the total amount of the solvent.

Abstract: According to the present disclosure, there is provided a water-repellent protective film-forming liquid chemical capable of achieving an improved water repellency imparting effect. The water-repellent protective film-forming liquid chemical according to the present disclosure contains the following compositions: (I) an aminosilane composition of the following general formula [1]; (II) a silicon compound of the following general formula [2]; and (III) an aprotic solvent, wherein the amount of the component (I) contained is 0.02 to 0.5 mass % based on the total amount of the components (I) to (III).

Abstract: A film-forming composition according to the present invention includes: a fluororesin having a repeating unit of the formula (1) and a repeating unit of the general formula (2); and a fluorine-containing solvent. In the general formula (2), R1 represents a C1-C15 straight, C3-C15 branched or C3-C15 cyclic hydrocarbon group in which at least one hydrogen atom may be replaced by a fluorine atom or chlorine atom and which may have a hydroxy group. This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element as the composition can form a fluororesin film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.

Abstract: A film-forming composition according to the present invention include fluororesin having a repeating unit of the general formula (1); and a fluorine-containing solvent. In the general formula (1), R1 each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and R2 each independently represents C1-C15 straight, C3-C15 branched or C3-C15cyclic fluorine-containing hydrocarbon gr which any hydrogen atom may be replaced by a fluorine atom with the proviso that the repeating unit contains at least one fluorine atom. This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element because the composition can form a film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.

Abstract: Provided are sulfonamide-containing compositions, topcoat polymers, and additive polymers for use in lithographic processes that have improved static receding water contact angles over those known in the art.

Abstract: A film-forming composition according to the present invention includes: a fluororesin having a repeating unit of the general formula (1); and a fluorine-containing solvent. In the general formula (1), R1 each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and R2 each independently represents a C1-C15 straight, C3-C15 branched or C3-C15 cyclic fluorine-containing hydrocarbon group in which any hydrogen atom may be replaced by a fluorine atom with the proviso that the repeating unit contains at least one fluorine atom; and This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element because the composition can form a film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.

Abstract: A film-forming composition according to the present invention includes: a fluororesin having a repeating unit of the formula (1) and a repeating unit of the general formula (2); and a fluorine-containing solvent. In the general formula (2), R1 represents a C1-C15 straight, C3-C15 branched or C3-C15 cyclic hydrocarbon group in which at least one hydrogen atom may be replaced by a fluorine atom or chlorine atom and which may have a hydroxy group. This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element as the composition can form a fluororesin film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.

Abstract: A positive-type resist composition according to the present invention includes a fluorine-containing aliphatic alcohol, a polymer, a vinyl compound and a photoacid generator, wherein the fluorine-containing aliphatic alcohol is a monohydric C2-C8 aliphatic alcohol in which the number of hydrogen atoms is equal to or less than the number of fluorine atoms. This positive-type resist composition has a small influence on organic materials, such as less dissolution and swelling of the organic materials, and can form a resist film on an organic polymer substrate etc. by a wet application process such that the resulting resist film or resist pattern shows high solvent resistance.