Patents by Inventor Yoshiharu Toyama

Yoshiharu Toyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for feeding a gas for epitaxial growth
    Patent number: 6123767
    Abstract: A liquid raw material is heated to its boiling point or higher at a vaporizer to mix the vaporized ingredient gas and a carrier gas at a mixer at predetermined concentrations. The flow of the mixed gas is adjusted while the mixed gas is heated to over its condensing point and the temperature thereof is kept. Subsequently, the mixed gas is fed to a reactor for epitaxial growth while the mixed gas is heated to over its condensing point and the temperature thereof is kept. When the temperature of a heating medium is kept constant at the vaporizer to vaporize the liquid raw material and the feeding amount of the liquid into the vaporizer is adjusted by the pressure of the gas inside the vaporizer, the liquid surface level can be controlled to be constant.
    Type: Grant
    Filed: May 21, 1999
    Date of Patent: September 26, 2000
    Assignees: Mitsubishi Materials Silicon Corporation, Mitsubishi Materials Polycrystalline Silicon Corporation
    Inventors: Yoshiharu Toyama, Akikazu Kuroda, Tokuji Kiyama, Sumio Kida, Shunji Yoshida, Takashi Yamamoto, Tetsuya Atsumi
  • Method and apparatus for feeding a gas for epitaxial growth
    Patent number: 6039809
    Abstract: A liquid raw material is heated to its boiling point or higher at a vaporizer to mix the vaporized ingredient gas and a carrier gas at a mixer at predetermined concentrations. The flow of the mixed gas is adjusted while the mixed gas is heated to over its condensing point and the temperature thereof is kept. Subsequently, the mixed gas is fed to a reactor for epitaxial growth while the mixed gas is heated to over its condensing point and the temperature thereof is kept. When the temperature of a heating medium is kept constant at the vaporizer to vaporize the liquid raw material and the feeding amount of the liquid into the vaporizer is adjusted by the pressure of the gas inside the vaporizer, the liquid surface level can be controlled to be constant.
    Type: Grant
    Filed: May 28, 1998
    Date of Patent: March 21, 2000
    Assignees: Mitsubishi Materials Silicon Corporation, Mitsubishi Materials Polycrystalline Silicon Corporation
    Inventors: Yoshiharu Toyama, Akikazu Kuroda, Tokuji Kiyama, Sumio Kida, Shunji Yoshida, Takashi Yamamoto, Tetsuya Atsumi