Abstract: This glass bonding material (21) is made of a cladding material (1) in which at least a first layer (11) made of an Al-based alloy and configured to be bonded to glass and a second layer (12) made of an Fe—Ni based alloy having a thermal expansion coefficient from 30° C. to 400° C. of 11.5×10?6 (K?1) or less are bonded.

Abstract: This glass bonding material (21) is made of a cladding material (1) in which at least a first layer (11) made of an Al-based alloy and configured to be bonded to glass and a second layer (12) made of an Fe—Ni based alloy having a thermal expansion coefficient from 30° C. to 400° C. of 11.5×10?6 (K?1) or less are bonded.

Abstract: A light emitting device includes a light emitting element disposed on a portion of a first lead frame element, a first resin including a fluorescent material, and a second resin. The first resin is above the light emitting element. The second resin is between the first resin and the first lead frame element. In some embodiments, the second resin includes a filler material that reflects light emitted by the light emitting element. In some embodiments, the light emitting device includes a protective diode connected in reverse parallel with the light emitting element. In some embodiments, a transparent resin may be disposed first and second resins.

Abstract: A semiconductor assembly comprises first and second containers which contain respective semiconductor chips and are stacked one over another. First and second external leads extending from the insides of the respective containers to outside thereof are bent so as to be connected to each other. The first and the second containers may be provided at corresponding positions with a recess and a projection to be engaged each other for positional alignment. There may be provided first and second heat radiating plates extending from the insides of the respective containers to outside thereof are bent so as to be connected to each other.

Abstract: A semiconductor assembly comprises first and second containers which contain respective semiconductor chips and are stacked one over another. First and second external leads extending from the insides of the respective containers to outside thereof are bent so as to be connected to each other. The first and the second containers may be provided at corresponding positions with a recess and a projection to be engaged each other for positional alignment. There may be provided first and second heat radiating plates extending from the insides of the respective containers to outside thereof are bent so as to be connected to each other.

Abstract: A semiconductor device, which uses a film carrier, comprises a semiconductor element with a plurality of terminals, a resin film with a first surface and a second surface, the film having a hole in which the semiconductor element is mounted, and a plurality of lead wires formed on the first surface of the resin film. Each lead wire has an inner lead, an intermediate lead and an outer lead. The inner lead is connected to a corresponding one of the terminals of the semiconductor element. The outer lead is connected to a corresponding external electrode. The intermediate lead is situated between the inner lead and the outer lead. At least said intermediate lead is formed on the first surface of the film. Each outer lead and that portion of the intermediate lead, which is close to the outer lead, is substantially on a level with the external electrode.

Abstract: An IC packing device comprises a semiconductor device, a piece of flexible resin film provided with an opening for receiving the semiconductor, wires arranged on the piece of flexible resin film and slits cut into the piece of film from the edges of the opening. The slits cut into the flexible resin film allow the film to be flexed downward toward the semiconductor, along with the wires which to establish electrical connection with the semiconductor. In this manner, the downwardly bent flexible film provides reduction in the possibility of a wire breaking due to excessive bending of the wire in order to make contact with the semiconductor.