Abstract: A power conversion portion (10) and a connection portion (20) converting power between a fuel cell (FC) and a battery (BAT) corresponding to dc power supply and a motor generator (MG) corresponding to an ac machine, are configured of a matrix converter. For a power flow pattern requiring that the dc power supply provide high voltage, a switch (SCd) in the connection portion (20) operates in response to a control signal received from a control device (30) to electrically connect a power supply line (LC) to a power supply line (Ld) to connect the fuel cell (FC) and the battery (BAT) in series.

Abstract: A power conversion portion (10) and a connection portion (20) converting power between a fuel cell (FC) and a battery (BAT) corresponding to dc power supply and a motor generator (MG) corresponding to an ac machine, are configured of a matrix converter. For a power flow pattern requiring that the dc power supply provide high voltage, a switch (SCd) in the connection portion (20) operates in response to a control signal received from a control device (30) to electrically connect a power supply line (LC) to a power supply line (Ld) to connect the fuel cell (FC) and the battery (BAT) in series.

Abstract: A diode (4) is a reverse blocking rectifier diode and connected in series to an IGBT (3) in a direction where a forward current flows in the diode (4) when the IGBT (3) comes into an ON state. Further, a diode (6) is a reverse blocking rectifier diode and connected in series to an IGBT (5) in a direction where a forward current flows in the diode (6) when the IGBT (5) comes into an ON state. A cathode of the diode (4) and a collector of the IGBT (5) are connected to each other through a node (7). A load (8) is connected to the node (7). The diodes (4, 6) are made of silicon carbide (SiC). With such a configuration achieved is a semiconductor converter circuit using a reverse blocking diode in which the forward voltage drop and the amount of reverse recovery electric charges are reduced as compared with a high-speed diode made of silicon.

Abstract: A diode (4) is a reverse blocking rectifier diode and connected in series to an IGBT (3) in a direction where a forward current flows in the diode (4) when the IGBT (3) comes into an ON state. Further, a diode (6) is a reverse blocking rectifier diode and connected in series to an IGBT (5) in a direction where a forward current flows in the diode (6) when the IGBT (5) comes into an ON state. A cathode of the diode (4) and a collector of the IGBT (5) are connected to each other through a node (7). A load (8) is connected to the node (7). The diodes (4, 6) are made of silicon carbide (SiC). With such a configuration achieved is a semiconductor converter circuit using a reverse blocking diode in which the forward voltage drop and the amount of reverse recovery electric charges are reduced as compared with a high-speed diode made of silicon.