Abstract: A method employed to determine a wire arrangement includes the steps of: arranging cells; performing a general routing; using maximum and minimum values of resistance, capacitance and other values stored in a library to calculate maximum and minimum delay times, the resistance, capacitance and other values being previously calculated through a simulation performed as a process parameter and a determinant of geometry as seen in plane are varied; if maximum delay and minimum delay times fall within a tolerable timing range, then performing a specific routing.

Abstract: In a semiconductor device provided with a plurality of standard cells each comprising an input terminal and MOS transistors, a diffused region having a substantially negligibly small resistance is formed in a semiconductor substrate, and the input terminal of the standard cell and gates of the MOS transistors are connected through the diffused region. Also, a diffused region is formed under the input terminal in the substrate, and the input terminal is connected to the diffused region. In a modification, another standard cell is formed by forming a diffused region and a metal layer connected to the diffused region on the substrate, and the another standard cell is connected to the input terminal.

Abstract: In a semiconductor device provided with a plurality of standard cells each comprising an input terminal and MOS transistors, a diffused region having a substantially negligibly small resistance is formed in a semiconductor substrate, and the input terminal of the standard cell and gates of the MOS transistors are connected through the diffused region. Also, a diffused region is formed under the input terminal in the substrate, and the input terminal is connected to the diffused region. In a modification, another standard cell is formed by forming a diffused region and a metal layer connected to the diffused region on the substrate, and the another standard cell is connected to the input terminal.

Abstract: A semiconductor integrated circuit in which adjacent terminals are formed by using contacts for connecting two metal layers or formed by using any of the metal layers so as to be disposed away from each other with an interval equal to larger than one wiring interval in the vertical and the horizontal directions, for example, diagonally or obliquely in a cell.

Abstract: The present invention provides an interconnection area decision processor for deciding vertical widths of areas employed for interconnection of a gate array. The interconnection area decision processor predicts which interconnection area each signal net passes on the basis of previously created data on cell arrangement and data on arrangement of transistor rows on a chip to estimate interconnection congestion per channel on the basis of the result of prediction and decide the number of transistor rows to be assigned to each channel on the basis of the estimated interconnection congestion, thereby to create data on the vertical width of each channel. Thus, density of integration can be improved by increasing the number of tracks of channels having large numbers of interconnections and decreasing the number of tracks of channels having small numbers of interconnections.