Abstract: A semiconductor fabricating method for a film to be processed containing a transition metal on an upper surface of a semiconductor wafer placed in a processing chamber in a container being etched with a gas for complexing the transition metal supplied into the processing chamber, including a first step of adsorbing, to the film, the complexing gas, while supplying the complexing gas, then increasing a temperature of the wafer to form an organic metal complex on a surface of the film, and volatilizing and desorbing the organic metal complex, and a second step of adsorbing, to the surface of the film, the complexing gas at a low temperature, while supplying the complexing gas, then stopping the supply of the complexing gas, and stepwise increasing the temperature of the wafer to volatilize and desorb an organic metal complex formed on the surface of the film.

Abstract: A flexible organic EL display of the present invention includes a plastic film, an adhesive layer and a lower insulating layer formed thereon, an organic EL element embedded in the lower insulating layer and constructed by forming an anode, an organic EL layer, and a cathode sequentially from a bottom, an upper insulating layer formed on the organic EL element, a TFT embedded in the upper insulating layer and constructed by forming an oxide semiconductor layer, a source electrode and a drain electrode, a gate insulating layer, and a gate electrode sequentially from a bottom, and a via hole provided in the upper insulating layer and reaching the drain electrode of the TFT, wherein the cathode is connected electrically to the drain electrode of the TFT via the via hole.

Abstract: A flexible organic EL display of the present invention includes a plastic film, an adhesive layer and a lower insulating layer formed thereon, an organic EL element embedded in the lower insulating layer and constructed by forming a cathode, an organic EL layer, and an anode sequentially from a bottom, an upper insulating layer formed on the organic EL element, a TFT embedded in the upper insulating layer and constructed by forming an organic active layer, a source electrode and a drain electrode, a gate insulating layer, and a gate electrode sequentially from a bottom, and a via hole provided in the upper insulating layer and reaching the drain electrode of the TFT, wherein the anode is connected electrically to the drain electrode of the TFT via the via hole.