Abstract: There is provided a pre-applied semiconductor sealing film for curing under pressure atmosphere as a non conductive film (NCF) suitable for pressure mounting. This NCF includes (A) a solid epoxy resin, (B) an aromatic amine which is liquid at room temperature and contains at least one of structures represented by formulae 1 and 2 below, (C) a silica filler, and (D) a polymer resin having a mass average molecular weight (Mw) of 6000 to 100000. The epoxy resin of the component (A) has an epoxy equivalent weight of 220 to 340. The component (B) is included in an amount of 6 to 27 parts by mass relative to 100 parts by mass of the component (A). The component (C) is included in an amount of 20 to 65 parts by mass relative to 100 parts by mass in total of the components. A content ratio ((A):(D)) between the component (A) and the component (D) is 99:1 to 65:35. This NCF further has a melt viscosity at 120° C. of 100 Pa·s or less, and has a melt viscosity at 120° C., after heated at 260° C.

Abstract: There is provided a pre-applied semiconductor sealing film for curing under pressure atmosphere as a non conductive film (NCF) suitable for pressure mounting. This NCF includes (A) a solid epoxy resin, (B) an aromatic amine which is liquid at room temperature and contains at least one of structures represented by formulae 1 and 2 below, (C) a silica filler, and (D) a polymer resin having a mass average molecular weight (Mw) of 6000 to 100000. The epoxy resin of the component (A) has an epoxy equivalent weight of 220 to 340. The component (B) is included in an amount of 6 to 27 parts by mass relative to 100 parts by mass of the component (A). The component (C) is included in an amount of 20 to 65 parts by mass relative to 100 parts by mass in total of the components. A content ratio ((A):(D)) between the component (A) and the component (D) is 99:1 to 65:35. This NCF further has a melt viscosity at 120° C. of 100 Pa·s or less, and has a melt viscosity at 120° C., after heated at 260° C.

Abstract: Provided is a film adhesive which is preferably used as a NCF, void-free, has excellent electrical connectivity and its high reliability, does not develop cracks easily, and has high surface flatness. Also provided is a semiconductor device in which the film adhesive according to the present invention is used as an NCF during the manufacture of the semiconductor device. The film adhesive according to the present invention contains (A) an epoxy resin; (B) a bisphenol F type phenoxy resin; (C) a phenol resin-based curing agent; (D) a modified imidazole compound; (E) a silica filler; (F) oxyquinoline; and (G) a butadiene-acrylonitrile-methacrylic acid copolymer. The content of component (A) is 19.3 to 33.8 parts by mass. The content of component (B) is 7.5 to 9.1 parts by mass. The content of component (D) is 1.915 to 5 parts by mass. The content of component (E) is 30 to 60 parts by mass. The content of component (F) is 2.5 to 10 parts by mass.

Abstract: Provided is a film adhesive which is preferably used as a NCF, void-free, has excellent electrical connectivity and its high reliability, does not develop cracks easily, and has high surface flatness. Also provided is a semiconductor device in which the film adhesive according to the present invention is used as an NCF during the manufacture of the semiconductor device. The film adhesive according to the present invention contains (A) an epoxy resin; (B) a bisphenol F type phenoxy resin; (C) a phenol resin-based curing agent; (D) a modified imidazole compound; (E) a silica filler; (F) oxyquinoline; and (G) a butadiene-acrylonitrile-methacrylic acid copolymer. The content of component (A) is 19.3 to 33.8 parts by mass. The content of component (B) is 7.5 to 9.1 parts by mass. The content of component (D) is 1.915 to 5 parts by mass. The content of component (E) is 30 to 60 parts by mass. The content of component (F) is 2.5 to 10 parts by mass.