Patents by Inventor Yoshihide Kihara

Yoshihide Kihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200303181
    Abstract: According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.
    Type: Application
    Filed: June 11, 2020
    Publication date: September 24, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Yoshihide KIHARA, Toru HISAMATSU, Tomoyuki OISHI
  • Patent number: 10777422
    Abstract: In a method according to an embodiment, before etching a target layer of a wafer, a main surface of the target layer is divided into a plurality of areas. A difference value between a groove width of a mask and a reference value of the groove width is calculated for each of the plurality of areas, a temperature of the target layer is adjusted by using correspondence data indicating correspondence between a temperature of the target layer and a film thickness of a formed film. Then, a film is formed on the mask for each atom layer, and a film having a film thickness corresponding to the difference value is formed on the mask to correct the groove width in each of the plurality of areas to the reference value.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: September 15, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide Kihara, Toru Hisamatsu, Masanobu Honda
  • Publication number: 20200279757
    Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.
    Type: Application
    Filed: February 28, 2020
    Publication date: September 3, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Sho KUMAKURA, Hironari SASAGAWA, Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20200279733
    Abstract: Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.
    Type: Application
    Filed: February 27, 2020
    Publication date: September 3, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Sho KUMAKURA, Maju TOMURA, Yoshihide KIHARA, Hironari SASAGAWA
  • Publication number: 20200279753
    Abstract: A substrate processing method includes etching a target film formed on a substrate through an opening of a mask formed on the target film with plasma generated from a mixed gas obtained by adding a gas having a carbonyl bond to a halogen-containing gas. The target film contains silicon and the mask is formed of a transition metal.
    Type: Application
    Filed: February 28, 2020
    Publication date: September 3, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tomohiko NIIZEKI, Yoshihide KIHARA
  • Patent number: 10763123
    Abstract: In an embodiment, a wafer W includes a layer EL to be etched and a mask MK4 provided on the layer EL to be etched, and a method MT of an embodiment, the layer EL to be etched is etched by removing the layer EL to be etched for each atomic layer, by repeating sequence SQ3 including step ST9a of irradiating the mask MK4 with secondary electrons by generating plasma and applying a DC voltage to an upper electrode 30 of a parallel plate electrode, and covering the mask MK4 with silicon oxide compound, step ST9b of generating plasma of fluorocarbon-based gas and forming a mixed layer MX2 including radicals on an atomic layer of the layer EL to be etched, and ST9d of generating plasma of Ar gas and applying a bias voltage to remove the mixed layer MX2.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: September 1, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide Kihara, Toru Hisamatsu
  • Publication number: 20200251344
    Abstract: A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which an underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing an anisotropic deposition to selectively form a deposition layer on a top portion of the mask.
    Type: Application
    Filed: January 31, 2019
    Publication date: August 6, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Toru HISAMATSU, Masanobu HONDA, Yoshihide KIHARA
  • Patent number: 10714340
    Abstract: According to an embodiment, a wafer W includes a layer EL to be etched, an organic film OL, an antireflection film AL, and a mask MK1, and a method MT according to an embodiment includes a step of performing an etching process on the antireflection film AL by using the mask MK1 with plasma generated in a processing container 12, in the processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film SX on the surface of the mask MK1, and steps ST6a to ST7 of etching the antireflection film AL by removing the antireflection film AL for each atomic layer by using the mask MK1 on which the protective film SX is formed.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: July 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide Kihara, Toru Hisamatsu, Tomoyuki Oishi
  • Publication number: 20200194257
    Abstract: A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toru HISAMATSU, Takayuki KATSUNUMA, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA
  • Publication number: 20200194274
    Abstract: A plasma processing method performed using a plasma processing apparatus includes a first step of forming a first film on a pattern formed on a substrate and having dense and coarse areas, and a second step of performing sputtering or etching on the first film.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide KIHARA, Toru HISAMATSU, Kensuke TANIGUCHI, Yoshinari HATAZAKI
  • Patent number: 10685848
    Abstract: In a method of an embodiment, a tungsten film is formed on a workpiece. The workpiece includes an underlying film and a mask provided on the underlying film. The tungsten film has a first region extending along the side wall surface of the mask that defines an opening, and a second region extending on the underlying film. Subsequently, the tungsten film is plasma-etched while leaving the first region. In forming the tungsten film, a precursor gas containing tungsten is supplied to the workpiece. Then, plasma of hydrogen gas is generated in order to supply hydrogen active species to the precursor on the workpiece.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: June 16, 2020
    Assignee: TOKYO ELECTON LIMITED
    Inventors: Yu Nagatomo, Yoshihide Kihara
  • Publication number: 20200176265
    Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
    Type: Application
    Filed: September 9, 2019
    Publication date: June 4, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki KATSUNUMA, Toru HISAMATSU, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA, Maju TOMURA, Sho KUMAKURA
  • Publication number: 20200168469
    Abstract: Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0° C. or less.
    Type: Application
    Filed: January 31, 2020
    Publication date: May 28, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Maju TOMURA, Yoshihide KIHARA, Masanobu HONDA
  • Publication number: 20200144071
    Abstract: A method includes anisotropically etching an etching target layer of a target object through an opening of the target object by generating plasma of a first gas within a processing vessel in which the target object is accommodated; and then forming a film on an inner surface of the opening by repeating a sequence comprising: a first process of supplying a second gas into the processing vessel; a second process of purging a space within the processing vessel; a third process of generating plasma of a third gas containing an oxygen atom within the processing vessel; and a fourth process of purging the space within the processing vessel. The first gas contains a carbon atom and a fluorine atom. The second gas contains an aminosilane-based gas. The etching target layer is a hydrophilic insulating layer containing silicon. Plasma of the first gas is not generated in the first process.
    Type: Application
    Filed: December 20, 2019
    Publication date: May 7, 2020
    Inventors: Yoshihide Kihara, Toru Hisamatsu, Masahiro Tabata
  • Publication number: 20200135480
    Abstract: An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.
    Type: Application
    Filed: December 31, 2019
    Publication date: April 30, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masahiro TABATA, Toru HISAMATSU, Yoshihide KIHARA
  • Publication number: 20200126801
    Abstract: A method of etching a silicon-containing film includes providing a workpiece in a chamber body of a plasma processing apparatus. The workpiece has a silicon-containing film and a mask. The mask is provided on the silicon-containing film. An opening is formed in the mask. The etching method further includes etching a silicon-containing film. In the etching, plasma of a processing gas containing carbon and iodine heptafluoride is generated in the chamber body to etch the silicon-containing film.
    Type: Application
    Filed: September 4, 2019
    Publication date: April 23, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Maju TOMURA, Yoshihide KIHARA, Masanobu HONDA
  • Patent number: 10586710
    Abstract: Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0° C. or less.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: March 10, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Maju Tomura, Yoshihide Kihara, Masanobu Honda
  • Publication number: 20200075343
    Abstract: In a method according to an embodiment, before etching a target layer of a wafer, a main surface of the target layer is divided into a plurality of areas. A difference value between a groove width of a mask and a reference value of the groove width is calculated for each of the plurality of areas, a temperature of the target layer is adjusted by using correspondence data indicating correspondence between a temperature of the target layer and a film thickness of a formed film. Then, a film is formed on the mask for each atom layer, and a film having a film thickness corresponding to the difference value is formed on the mask to correct the groove width in each of the plurality of areas to the reference value.
    Type: Application
    Filed: November 8, 2019
    Publication date: March 5, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide KIHARA, Toru HISAMATSU, Masanobu HONDA
  • Patent number: 10566209
    Abstract: An etching method can protect a mask with a material having higher etching resistance to a silicon-containing film. The etching method is performed in a state that a processing target object is placed within a chamber main body. The etching method includes forming a tungsten film on the processing target object and etching the silicon-containing film of the processing target object. The forming of the tungsten film includes supplying a gaseous tungsten-containing precursor onto the processing target object; and generating plasma of a hydrogen gas to supply active species of hydrogen to the precursor on the processing target object. In the etching of the silicon-containing film, plasma of a processing gas containing fluorine, hydrogen and carbon is generated within the chamber main body.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: February 18, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yu Nagatomo, Yoshihide Kihara
  • Patent number: 10559472
    Abstract: An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: February 11, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Toru Hisamatsu, Yoshihide Kihara