Patents by Inventor Yoshihide Kihara
Yoshihide Kihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190080929Abstract: In a method of an embodiment, a tungsten film is formed on a workpiece. The workpiece includes an underlying film and a mask provided on the underlying film. The tungsten film has a first region extending along the side wall surface of the mask that defines an opening, and a second region extending on the underlying film. Subsequently, the tungsten film is plasma-etched while leaving the first region. In forming the tungsten film, a precursor gas containing tungsten is supplied to the workpiece. Then, plasma of hydrogen gas is generated in order to supply hydrogen active species to the precursor on the workpiece.Type: ApplicationFiled: September 11, 2018Publication date: March 14, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Yu NAGATOMO, Yoshihide KIHARA
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Publication number: 20190074190Abstract: Provided is a method of etching a silicon-containing film made of at least one of silicon oxide and silicon nitride. The etching method includes: (i) preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film in a chamber body of a plasma processing apparatus, in which an opening is formed in the mask; and (ii) etching the silicon-containing film, in which plasma is produced in the chamber body from processing gas containing fluorine, hydrogen, and iodine in order to etch the silicon-containing film, and a temperature of the workpiece is set to a temperature of 0° C. or less.Type: ApplicationFiled: August 31, 2018Publication date: March 7, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Maju TOMURA, Yoshihide KIHARA, Masanobu HONDA
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Publication number: 20190074191Abstract: An etching method can protect a mask with a material having higher etching resistance to a silicon-containing film. The etching method is performed in a state that a processing target object is placed within a chamber main body. The etching method includes forming a tungsten film on the processing target object and etching the silicon-containing film of the processing target object. The forming of the tungsten film includes supplying a gaseous tungsten-containing precursor onto the processing target object; and generating plasma of a hydrogen gas to supply active species of hydrogen to the precursor on the processing target object. In the etching of the silicon-containing film, plasma of a processing gas containing fluorine, hydrogen and carbon is generated within the chamber main body.Type: ApplicationFiled: August 31, 2018Publication date: March 7, 2019Inventors: Yu Nagatomo, Yoshihide Kihara
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Publication number: 20190067019Abstract: An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.Type: ApplicationFiled: August 24, 2018Publication date: February 28, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Masahiro TABATA, Toru HISAMATSU, Yoshihide KIHARA
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Patent number: 10217643Abstract: A method of processing a target object is provided. The target object includes a first protrusion portion, a second protrusion portion, an etching target layer and a groove portion. The groove portion is provided on a main surface of the target object, provided on the etching target layer and defined by the first and the second protrusion portions. An inner surface of the groove portion is included in the main surface. In the method, a first sequence is repeatedly performed N times (N is an integer equal to or larger than 2). The first sequence includes (a) forming a protection film conformally on the main surface in a processing vessel of a plasma processing apparatus in which the target object is accommodated; and (b) etching a bottom portion of the groove portion with plasma of a gas generated within the processing vessel after the process a is performed.Type: GrantFiled: August 25, 2017Date of Patent: February 26, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Yoshihide Kihara
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Publication number: 20190019689Abstract: In a method according to an embodiment, before etching a target layer of a wafer, a main surface of the target layer is divided into a plurality of areas. A difference value between a groove width of a mask and a reference value of the groove width is calculated for each of the plurality of areas, a temperature of the target layer is adjusted by using correspondence data indicating correspondence between a temperature of the target layer and a film thickness of a formed film. Then, a film is formed on the mask for each atom layer, and a film having a film thickness corresponding to the difference value is formed on the mask to correct the groove width in each of the plurality of areas to the reference value.Type: ApplicationFiled: September 19, 2018Publication date: January 17, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Yoshihide KIHARA, Toru HISAMATSU, Masanobu HONDA
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Publication number: 20180301347Abstract: A method includes anisotropically etching an etching target layer of a target object through an opening of the target object by generating plasma of a first gas within a processing vessel in which the target object is accommodated; and then forming a film on an inner surface of the opening by repeating a sequence comprising: a first process of supplying a second gas into the processing vessel; a second process of purging a space within the processing vessel; a third process of generating plasma of a third gas containing an oxygen atom within the processing vessel; and a fourth process of purging the space within the processing vessel. The first gas contains a carbon atom and a fluorine atom. The second gas contains an aminosilane-based gas. The etching target layer is a hydrophilic insulating layer containing silicon. Plasma of the first gas is not generated in the first process.Type: ApplicationFiled: April 17, 2018Publication date: October 18, 2018Inventors: Yoshihide Kihara, Toru Hisamatsu, Masahiro Tabata
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Publication number: 20180226279Abstract: A plasma processing method of processing a processing target object, in which an organic film, a mask film and a resist film are stacked in sequence, by plasma includes a process of supplying a modifying gas, which is a H2 gas, a hydrogen halide gas, or a mixed gas containing a rare gas and a H2 gas or a hydrogen halide gas, into a chamber accommodating therein the processing target object in which a preset pattern is formed on the resist film; and modifying process of modifying the resist film of the processing target object by plasma of the modifying gas at a processing temperature equal to or less than ?20° C.Type: ApplicationFiled: August 10, 2016Publication date: August 9, 2018Inventors: Shuhei Ogawa, Wanjae Park, Yoshihide Kihara, Masanobu Honda
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Publication number: 20180158684Abstract: A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed. In this process, plasma of a first gas including a silicon halide gas and plasma of a second gas including an oxygen gas are alternately generated. Then, a region of the silicon oxide film is removed such that only a region along a side wall of the first mask is left, and then, the first mask is removed and the antireflection film and an organic film is etched.Type: ApplicationFiled: January 17, 2018Publication date: June 7, 2018Inventors: Yoshihide KIHARA, Toru HISAMATSU
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Patent number: 9911607Abstract: A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed. In this process, plasma of a first gas including a silicon halide gas and plasma of a second gas including an oxygen gas are alternately generated. Then, a region of the silicon oxide film is removed such that only a region along a side wall of the first mask is left, and then, the first mask is removed and the antireflection film and an organic film is etched.Type: GrantFiled: September 24, 2015Date of Patent: March 6, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihide Kihara, Toru Hisamatsu
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Patent number: 9911622Abstract: Non-uniformity in a thickness of a silicon oxide film formed on a processing target object can be reduced even when an aspect ratio of an opening of a mask is increased. A silicon oxide film is formed by repeating a sequence including: (a) a first process of forming a reactant precursor on the processing target object by generating plasma of a first gas containing a silicon halide gas within a processing vessel of a plasma processing apparatus; (b) a second process of generating plasma of a rare gas within the processing vessel after the first process; (c) a third process of forming a silicon oxide film by generating plasma of a second gas containing an oxygen gas within the processing vessel after the second process; and (d) a fourth process of generating plasma of a rare gas within the processing vessel after the third process.Type: GrantFiled: January 27, 2016Date of Patent: March 6, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihide Kihara, Toru Hisamatsu, Tomoyuki Oishi, Masanobu Honda
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Publication number: 20180061655Abstract: A method of processing a target object is provided. The target object includes a first protrusion portion, a second protrusion portion, an etching target layer and a groove portion. The groove portion is provided on a main surface of the target object, provided on the etching target layer and defined by the first and the second protrusion portions. An inner surface of the groove portion is included in the main surface. In the method, a first sequence is repeatedly performed N times (N is an integer equal to or larger than 2). The first sequence includes (a) forming a protection film conformally on the main surface in a processing vessel of a plasma processing apparatus in which the target object is accommodated; and (b) etching a bottom portion of the groove portion with plasma of a gas generated within the processing vessel after the process a is performed.Type: ApplicationFiled: August 25, 2017Publication date: March 1, 2018Inventors: Masahiro Tabata, Yoshihide Kihara
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Patent number: 9859126Abstract: A method for processing a target object by using a capacitively coupled plasma processing apparatus includes a first step of supplying a first gas containing a silicon-containing gas into the processing chamber where a target object is accommodated; a second step of generating a plasma of a rare gas in the processing chamber after executing the first step; a third step of generating a plasma of a second gas containing oxygen gas in the processing chamber after executing the second step; and a fourth step of generating a plasma of a rare gas in the processing chamber after executing the third step. A silicon oxide film is formed by repeatedly executing a sequence including the first step to the fourth step. A negative DC voltage is applied to the upper electrode in at least any one of the second step to the fourth step.Type: GrantFiled: April 25, 2016Date of Patent: January 2, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihide Kihara, Tomoyuki Oishi, Toru Hisamatsu
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Patent number: 9721766Abstract: A method for processing a target object includes a formation step of forming a silicon oxide film in a processing chamber by repeatedly executing a sequence including a first step of supplying a first gas containing aminosilane-based gas, a second step of purging a space in the processing chamber after the first step, a third step of generating a plasma of a second gas containing oxygen gas after the second step, and a fourth step of purging the space after the third step. The method further includes a preparation step executed before the target object is accommodated in the processing chamber and a processing step of performing an etching process on the target object. The preparation step is performed before the processing step. The formation step is performed in the preparation step and the processing step. In the first step, a plasma of the first gas is not generated.Type: GrantFiled: October 4, 2016Date of Patent: August 1, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihide Kihara, Toru Hisamatsu, Masanobu Honda, Tomoyuki Oishi
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Publication number: 20170098528Abstract: A method for processing a target object includes a formation step of forming a silicon oxide film in a processing chamber by repeatedly executing a sequence including a first step of supplying a first gas containing aminosilane-based gas, a second step of purging a space in the processing chamber after the first step, a third step of generating a plasma of a second gas containing oxygen gas after the second step, and a fourth step of purging the space after the third step. The method further includes a preparation step executed before the target object is accommodated in the processing chamber and a processing step of performing an etching process on the target object. The preparation step is performed before the processing step. The formation step is performed in the preparation step and the processing step. In the first step, a plasma of the first gas is not generated.Type: ApplicationFiled: October 4, 2016Publication date: April 6, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Yoshihide KIHARA, Toru HISAMATSU, Masanobu HONDA, Tomoyuki OISHI
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Patent number: 9607811Abstract: Disclosed is a method of processing a workpiece including a mask. The processing method includes: a first process of generating plasma of a first gas containing a silicon halide gas in a processing container of a plasma processing apparatus that accommodates a workpiece having a mask, to form a reactive precursor; a second process of purging a space in the processing container; a third process of generating plasma of a second gas containing oxygen gas in the processing container to form a silicon oxide film; and a fourth process of purging the space in the processing container. In the processing method, a sequence including the first to fourth processes is repeated.Type: GrantFiled: September 25, 2015Date of Patent: March 28, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihide Kihara, Toru Hisamatsu, Masanobu Honda
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Patent number: 9583361Abstract: A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode. In the method, a distance between the upper electrode and the mounting table in the etching of the hard mask layer ((b) process) is set to be larger than a distance between the upper electrode and the mounting table in the exposing of the resist mask to the active species of hydrogen ((a) process).Type: GrantFiled: September 11, 2013Date of Patent: February 28, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihide Kihara, Hiromi Mochizuki, Masanobu Honda, Masaya Kawamata, Ken Kobayashi, Ryoichi Yoshida
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Patent number: 9502219Abstract: The present disclosure provides a method of performing a plasma processing on a substrate by using a plasma processing apparatus including a processing container; an outer upper electrode provided to face a lower electrode; an inner upper electrode disposed inside the outer upper electrode; a first high-frequency power supply; a first power feeding unit; a second power feeding unit; and a variable condenser. The first and second power feeding units, a fixed condenser formed between the outer upper electrode and the inner upper electrode, and a closed circuit including the variable condenser become a resonance state when the variable condenser has a capacitance value in a predetermined resonance region. The method includes selectively using a capacitance value in a first region lower than the resonance region of the variable condenser and a capacitance value in a second region higher than the resonance region to perform the plasma processing.Type: GrantFiled: October 30, 2013Date of Patent: November 22, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihide Kihara, Masaya Kawamata, Toshio Haga
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Publication number: 20160314982Abstract: A method for processing a target object by using a capacitively coupled plasma processing apparatus includes a first step of supplying a first gas containing a silicon-containing gas into the processing chamber where a target object is accommodated; a second step of generating a plasma of a rare gas in the processing chamber after executing the first step; a third step of generating a plasma of a second gas containing oxygen gas in the processing chamber after executing the second step; and a fourth step of generating a plasma of a rare gas in the processing chamber after executing the third step. A silicon oxide film is formed by repeatedly executing a sequence including the first step to the fourth step. A negative DC voltage is applied to the upper electrode in at least any one of the second step to the fourth step.Type: ApplicationFiled: April 25, 2016Publication date: October 27, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Yoshihide KIHARA, Tomoyuki OISHI, Toru HISAMATSU
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Publication number: 20160225639Abstract: Non-uniformity in a thickness of a silicon oxide film formed on a processing target object can be reduced even when an aspect ratio of an opening of a mask is increased. A silicon oxide film is formed by repeating a sequence including: (a) a first process of forming a reactant precursor on the processing target object by generating plasma of a first gas containing a silicon halide gas within a processing vessel of a plasma processing apparatus; (b) a second process of generating plasma of a rare gas within the processing vessel after the first process; (c) a third process of forming a silicon oxide film by generating plasma of a second gas containing an oxygen gas within the processing vessel after the second process; and (d) a fourth process of generating plasma of a rare gas within the processing vessel after the third process.Type: ApplicationFiled: January 27, 2016Publication date: August 4, 2016Inventors: Yoshihide Kihara, Toru Hisamatsu, Tomoyuki Oishi, Masanobu Honda