Abstract: An electrode structure of a solar cell includes an electric conductor on a substrate side of a chalcogen solar cell, and a wiring element to be electrically connected with the electric conductor. The wiring element is stacked on and bonded with the electric conductor. The wiring element and the electric conductor each contain a group VI element. In a stacked direction of the electric conductor and the wiring element, a peak of a concentration distribution of the group VI element is shifted from an interface between the electric conductor and the wiring element.

Abstract: An electrode structure of a solar cell includes an electric conductor on a substrate side of a chalcogen solar cell, and a wiring element to be electrically connected with the electric conductor. The wiring element is stacked on and bonded with the electric conductor. The melting point of the wiring element is equal to or higher than 230° C., and the electric conductor in the region corresponding to the wiring element includes a part of the metal element of the wiring element.

Abstract: A photoelectric conversion module (10) comprises a photoelectric conversion cell (12) and a grid electrode (31) provided in the photoelectric conversion cell (12) on a substrate. The photoelectric conversion cell (12) includes a first electrode layer (22), a second electrode layer (24), a photoelectric conversion layer (26) between the first electrode layer (22) and the second electrode layer (24). The second electrode layer (24) is formed of a transparent electrode layer located on opposite side of the photoelectric conversion layer (26) to the substrate (20). The grid electrode (31) is provided between the photoelectric conversion layer (26) and the transparent electrode layer.

Abstract: A photoelectric conversion module (10) comprises a photoelectric conversion cell (12) including a first electrode layer (22), a second electrode layer (24), and a photoelectric conversion layer (26); and a plurality of grid electrodes (31). At least one of the first electrode layer and the second electrode layer is a transparent electrode layer. The transparent electrode layer includes a first region and a second region. The second region has sheet resistance smaller than sheet resistance in the first region, a film thickness larger than a film thickness in the first region, or transmittance smaller than transmittance in the first region. An interval between the grid electrodes adjacent to each other in the first direction in the first region is smaller than an interval between the grid electrodes adjacent to each other in the first direction in the second region.

Abstract: A photoelectric conversion module (10) comprises a photoelectric conversion cell (12) and a grid electrode (31) provided in the photoelectric conversion cell (12) on a substrate. The photoelectric conversion cell (12) includes a first electrode layer (22), a second electrode layer (24), a photoelectric conversion layer (26) between the first electrode layer (22) and the second electrode layer (24). The second electrode layer (24) is formed of a transparent electrode layer located on opposite side of the photoelectric conversion layer (26) to the substrate (20). The grid electrode (31) is provided between the photoelectric conversion layer (26) and the transparent electrode layer.

Abstract: The invention allows for testing by high velocity signals of high density LSIs prior to being packaged having an electrode spacing on the odder of 150 &mgr;m, for example. Coaxial transmission lines 13 for termination formed through a terminal support 11 are arranged in a two-dimensional array. Connected to one ends of the transmission lines 13 are one ends of contact pins 18 such as conductive whiskers while the other ends of the transmission lines 13 are connected to a transmission line block 61 of a three-dimensionally upwardly gradually broadening configuration through a connection plate 72 similar in construction to the terminal support 11. The transmission line block 61 holds high frequency transmission lines 62 for relay connected at one ends to the other ends of the coaxial transmission lines 13 and having spacings between the adjacent lines broadened at the other upper ends. The widely spaced upper ends of the transmission lines 62 are connected to a performance board (not shown).

Abstract: An integrated type microswitch with high durability is provided. The integrated type microswitch is of the construction through micro-machining process in which a movable plate is provided above a fulcrum means movable in seesaw movement by means of either electrostatic or magnetic force, so that either one of movable contacts mounted on opposite free ends thereof is on-off connected to fixed contact disposed in opposite relation due to seesaw movement of the movable plate.

Abstract: The invention allows for testing by high velocity signals of high density LSIs prior to being packaged having an electrode spacing on the odder of 150 &mgr;m, for example. Coaxial transmission lines 13 for termination formed through a terminal support 11 are arranged in a two-dimensional array. Connected to one ends of the transmission lines 13 are one ends of contact pins 18 such as conductive whiskers while the other ends of the transmission lines 13 are connected to a transmission line block 61 of a three-dimensionally upwardly gradually broadening configuration through a connection plate 72 similar in construction to the terminal support 11. The transmission line block 61 holds high frequency transmission lines 62 for relay connected at one ends to the other ends of the coaxial transmission lines 13 and having spacings between the adjacent lines broadened at the other upper ends. The widely spaced upper ends of the transmission lines 62 are connected to a performance board (not shown).