Patents by Inventor Yoshihide Mizuo

Yoshihide Mizuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MATERIAL FOR CHEMICAL VAPOR DEPOSITION AND PROCESS FOR FORMING SILICON-CONTAINING THIN FILM USING SAME
    Publication number: 20120021127
    Abstract: A material for chemical vapor deposition containing an organic silicon-containing compound represented by formula: HSiCl(NR1R2)(NR3R4), wherein R1 and R3 each represent C1-C4 alkyl or hydrogen; and R2 and R4 each represent C1-C4 alkyl. The material is particularly suitable as a material for forming a silicon nitride thin film on a substrate by chemical vapor deposition. The use of the material allows for film formation at low temperatures ranging from 300° to 500° C.
    Type: Application
    Filed: February 15, 2010
    Publication date: January 26, 2012
    Applicant: ADEKA CORPORATION
    Inventors: Hiroki Sato, Yoshihide Mizuo, Akio Saito, Junji Ueyama