Patents by Inventor Yoshihide Osada

Yoshihide Osada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epilepsy treatment agent
    Patent number: 11660275
    Abstract: Provided is a combination agent that combines N-[(1S)-2,2,5,7-tetrafluoro-2,3-dihydro-1H-inden-1-yl]sulfamide with an AMPA-type glutamate receptor antagonist such as 3-(2-cyanophenyl)-5-(2-pyridyl)-1-phenyl-1,2-dihydropyridin-2-one or 2-fluoro-6-(3-fluoro-8-oxo-7-(pyridin-3-yl)-7,8-dihydro-6H-pyrano[3,2-b:5,4-b?]dipyridin-9-yl)benzonitrile, and it has potential for use as a therapeutic agent for epilepsy.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: May 30, 2023
    Assignee: Eisai R&D Management Co., Ltd.
    Inventors: Hiroyuki Higashiyama, Hisashi Wakita, Yoshimasa Ito, Yoshihide Osada
  • EPILEPSY TREATMENT AGENT
    Publication number: 20210000771
    Abstract: Provided is a combination agent that combines N-[(1S)-2,2,5,7-tetrafluoro-2,3-dihydro-1H-inden-1-yl]sulfamide with an AMPA-type glutamate receptor antagonist such as 3-(2-cyanophenyl)-5-(2-pyridyl)-1-phenyl-1,2-dihydropyridin-2-one or 2-fluoro-6-(3-fluoro-8-oxo-7-(pyridin-3-yl)-7,8-dihydro-6H-pyrano[3,2-b:5,4-b?]dipyridin-9-yl)benzonitrile, and it has potential for use as a therapeutic agent for epilepsy.
    Type: Application
    Filed: March 18, 2019
    Publication date: January 7, 2021
    Applicant: Eisai R&D Management Co., Ltd.
    Inventors: Hiroyuki Higashiyama, Hisashi Wakita, Yoshimasa Ito, Yoshihide OSADA
  • Semiconductor switching device
    Patent number: 4325074
    Abstract: Provided is a semiconductor switching device having a four-layer structure. A second semiconductor layer of the switching device has a depth of 8.mu.. The thickness of the second semiconductor layer is set at a value less than a value four times the thickness of a depletion layer which is formed in the second semiconductor layer when breakover voltage has been applied to the switching device.
    Type: Grant
    Filed: November 9, 1979
    Date of Patent: April 13, 1982
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Yoshihide Osada, Syuji Sugioka