Patents by Inventor Yoshihiko Horikawa

Yoshihiko Horikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor apparatus
    Patent number: 5866463
    Abstract: In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the above semiconductor substrate is formed a P-type collector layer so that at least a part of the P-type collector layer is in contact with said oxide insulating layer. In the surface region of said P-type collector layer is formed a P-type collector contact layer. An N-type base layer is formed in that region on the surface side of said P-type collector layer in which said P-type collector contact layer does not exist. A P-type emitter layer is formed on the surface side of said N-type base layer.
    Type: Grant
    Filed: May 21, 1997
    Date of Patent: February 2, 1999
    Assignee: Matsushita Electric Industrial Co. Ltd.
    Inventors: Takehiro Hirai, Mitsuo Tanaka, Atsushi Hori, Hiroshi Shimomura, Yoshihiko Horikawa
  • Method of manufacturing a bipolar transistor
    Patent number: 5712174
    Abstract: In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the above semiconductor substrate is formed a P-type collector layer so that at least a part of the P-type collector layer is in contact with said oxide insulating layer. In the surface region of said P-type collector layer is formed a P-type collector contact layer. An N-type base layer is formed in that region on the surface side of said P-type collector layer in which said P-type collector contact layer does not exist. A P-type emitter layer is formed on the surface side of said N-type base layer.
    Type: Grant
    Filed: March 19, 1996
    Date of Patent: January 27, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takehiro Hirai, Mitsuo Tanaka, Atsushi Hori, Hiroshi Shimomura, Yoshihiko Horikawa