Abstract: A vibration isolation supporting structure and a vibration isolation system that can prevent a high-frequency vibration and a low-frequency vibration generated on a floor of a building. The vibration isolation supporting structure includes a plurality of supporting portions erected facing each other in a predetermined area near a wall of a floor of a building, a supporting structure supported on the floor by the supporting portions, and a fixing device configured to fix the supporting structure to the floor, and when receiving a release command, the fixing device releases fixing of the supporting structure to the floor.

Abstract: An object of the invention is to provide a vibration isolation supporting structure and a vibration isolation system that can prevent a high-frequency vibration and a low-frequency vibration generated on a floor of a building. The vibration isolation supporting structure includes a plurality of supporting portions 21 erected facing each other in a predetermined area near a wall 4 of a floor 5 of a building, a supporting structure 22 supported on the floor 5 by the supporting portions 21, and a fixing device 24 configured to fix the supporting structure 22 to the floor 5, and when receiving a release command, the fixing device 24 releases fixing of the supporting structure 22 to the floor 5.

Abstract: Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a g

Abstract: Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a g

Abstract: In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.

Abstract: A disc rotor for a disc brake with a vent hole shape which has an inner peripheral corner with a larger radius to reduce stress generated by braking torque and suppresses an increase in stress generated by pad pressure. The disc rotor includes a first sliding part connected to a bell housing, a second sliding part located parallel to, and spaced in an axle direction from, the first sliding part, a plurality of ribs circumferentially spaced between the sliding parts, and vent holes formed by the ribs and the sliding parts. The inner peripheral shape of each of the vent holes has at least two arc shapes with different curvature radii at an end perpendicular to the disc rotor's rotation direction. The smallest curvature radius is 2 mm or more. An arc curvature radius on the first sliding part side is larger than that on the second sliding part side.

Abstract: In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.