Abstract: It is an object of the present disclosure to dispose an optical element on a lower surface side of transistors without being influenced by heat treatment in a transistor forming process such that peeling, displacement, and the like do not easily occur. A transistor array substrate includes: a first substrate (110) including transistors (113) arranged in an array; and a second substrate (120) including an optical element (122), in which the transistors are arranged on a front surface side of the first substrate, and the second substrate is bonded to a back surface of the first substrate by plasma bonding treatment.

Abstract: A transistor array substrate includes a scan line formed on a support substrate, a capacitive section formed above the scan line, and a thin film transistor formed above the capacitive section, in which a perimeter of the thin film transistor is surrounded by a wall-shaped horizontal light-blocking film that extends in a normal direction with respect to the support substrate and is in contact with a surface of an electrode that is an uppermost layer of the capacitive section, and an upper light-blocking film is formed above the thin film transistor.