Abstract: A magnetic head using magnetoresistive effect comprising a magnetic sensing portion formed of a magnetoresistive effect element. The magnetic sensing portion includes a lamination layer structure portion which includes at least a free layer, a fixed layer made of a ferromagnetic material, an antiferromagnetic layer and a spacer layer interposed between the free layer and the fixed layer are laminated with each other. The lamination layer structure portion includes a magnetic flux introducing layer. The lamination layer structure portion has at its lamination layer direction opposing side surfaces formed of one flat surface or continuous one curved surface over at least the free layer, the spacer layer and the fixed layer. A hard magnetic layer for maintaining a magnetic stability of the free layer is disposed in direct contact with the opposing surfaces or through an insulating layer.

Abstract: A method of manufacturing a magnetic head including a magnetic sensing portion formed of a magnetoresistive effect element, a magnetoresistive effect magnetic head manufacturing method depositing, via a film deposition process, a lamination layer having a free layer comprised of a soft magnetic material of which the magnetization is rotated in response to an external magnetic field, a fixed layer comprised of a ferromagnetic material, an antiferromagnetic layer for fixing the magnetization of said fixed layer, a magnetic flux introducing layer with a tip end of which is opposed to a surface which is brought in contact with or opposed to a magnetic recording medium, and a spacer layer interposed between said free layer and said fixed layer; patterning at least said free layer and said fixed layer with a mask such that opposing side surfaces of said free layer and said fixed layer are formed of one continuous surface; and forming hard magnetic layers having high or low resistance for maintaining a magnetic stab

Abstract: A spin-valve thin-film magnetic element includes a substrate, a composite formed thereon, and electrode layers formed on both sides of the composite. The composite includes an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer. The mean-free-path-extending layer may be a back layer or a mirror reflective layer. The mean-free-path-extending layer extends the mean free path of spin-up conduction electrons in the spin-valve thin-film magnetic element. This spin-valve thin-film magnetic element meets trends toward a narrower track width.

Abstract: The present invention provides a spin valve thin film magnetic element including a laminate in which an antiferromagnetic layer, a pinned magnetic layer provided in contact with the antiferromagnetic layer so that the magnetization direction is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer provided in contact with the pinned magnetic layer, a second free magnetic layer provided in contact with the nonmagnetic conductive layer, a nonmagnetic intermediate layer provided in contact with the second free magnetic layer, a first free magnetic layer provided in contact with the nonmagnetic intermediate layer and antiferromagnetically coupled with the second free magnetic layer to form a ferrimagnetic state together with the second free magnetic layer, and a backed layer provided in contact with the first free magnetic layer and having higher conductivity than the first free magnetic layer are laminated.

Abstract: A magnetic head using magneto-resistive effect includes a spin-valve type giant magneto-resistive effect element or tunnel-type magneto-resistive effect element type lamination layer structure portion in which a free layer 4 made of a soft magnetic material of which the magnetization is rotated in response to an external magnetic field, a fixed layer 6 made of a ferromagnetic material, an antiferromagnetic layer 7 for fixing the magnetization of this fixed layer 6 and a spacer layer 5, i.e., nonmagnetic conductive layer or a tunnel barrier layer are laminated with each other.

Abstract: A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

Abstract: A thin-film magnetic head includes a spin-valve thin-film magnetic element, first and second insulating layers, and first and second shielding layers. The spin-valve thin-film magnetic element includes a free magnetic layer, a nonmagnetic conductive layer, a pinned magnetic layer, an antiferromagnetic layer, a pair of bias layers, and a pair of conductive layers. The pair of conductive layers is located on one side in the thickness direction of the free magnetic layer, and the pair of bias layers is located on the other side in the thickness direction of the free magnetic layer, is disposed on both sides in the track width direction of at least a portion of the second insulating layer, and is in contact with the free magnetic layer.

Abstract: A spin valve thin-film magnetic element has an improved rate of change in resistance (&Dgr;R/R) that can be used for a narrower magnetic track. The spin valve thin-film magnetic element has a laminate that include an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic conductive layer, a free magnetic layer, a back layer, specular-reflection layers and a pair of electrode layers formed at the two sides of the laminate. Preferably the specular reflection layer includes an oxide, such as &agr;-Fe2O3 or NiO, or a half-metal Heusler alloy, such as NiMnSb or PtMnSb.

Abstract: A magnetoresistive element includes a multilayered film comprising a magnetic detecting layer having a magnetoresistive effect, a pair of first antiferromagnetic layers in contact with the magnetic detecting layer of the multilayered film at a predetermined gap in the track width direction, the first antiferromagnetic layers aligning the magnetization direction of the magnetic detecting layer, and a pair of conductive layers in contact with the pair of first antiferromagnetic layers, the pair of conductive layers applying a detecting current to the multilayered film. The first antiferromagnetic layers are composed of an antiferromagnetic material having higher resistivity than that of the conductive layers. The conductive layers are superimposed with the corresponding first antiferromagnetic layers and are in contact with the magnetic detecting layer in a range of the predetermined gap.

Abstract: A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

Abstract: A magnetoresistive element includes an insulating layer formed between electrode layers, and the electrode layers are formed on a multilayer film so as to be in contact with the sides of the insulating layer. The thickness of the electrode layers can therefore be kept thick even at front end faces and a sensing current can flow into the multilayer film always at a constant level.

Abstract: The present invention provides a thin film magnetic head which is prevented from producing a great step in an upper shield layer and which can decrease the probability of a short circuit between the upper shield layer or lower shield layer and a spin-valve thin film magnetic element. The thin film magnetic head includes a spin-valve thin film magnetic element including a lamination of a free magnetic layer, a nonmagnetic conductive layer, a pinned magnetic layer, and an antiferromagnetic layer, a pair of conductive layers for supplying a sensing current to the free magnetic layer, and a pair of insulating bias layers for orienting the magnetization direction of the free magnetic layer; and a pair of shield layers laminated on both sides of the spin-valve thin film magnetic element in the direction of the thickness thereof.

Abstract: A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

Abstract: A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

Abstract: A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

Abstract: A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.

Abstract: In the present invention, hard bias layers are arranged in the same layer level as a free magnetic layer, and the upper surfaces of the hard bias layers are joined to the sides of a lamination at positions lower than the upper edges of the sides of the lamination above a substrate. The upper surfaces of the hard bias layers are also joined to the sides of the lamination at the same position as or positions lower than the uppermost position of the hard bias layers above the substrate. A spin-valve thin film element is provided having a decrease in an effective magnetic field applied to the free magnetic layer, and a magnetic field in the direction opposite to the magnetization direction of the free magnetic layer, permitting sufficient control of the magnetic domain of the free magnetic layer, and exhibiting excellent stability. The present invention also provides a method of manufacturing the spin-valve thin film element.

Abstract: A magnetoresistive element includes a nonmagnetic conductive layer, first and second ferromagnetic layers which are conductive and which sandwich the nonmagnetic conductive layer, an antiferromagnetic layer magnetically coupled to the first ferromagnetic layer for fixing the magnetization direction of the first ferromagnetic layer, a bias layer magnetically coupled to the second ferromagnetic layer for aligning the magnetization direction of the second ferromagnetic layer in a direction crossing to the magnetization direction of the first ferromagnetic layer, and a pair of electrode layers for applying a sensing current to the first and second ferromagnetic layers and the nonmagnetic conductive layer. The antiferromagnetic layer, the first ferromagnetic layer, the nonmagnetic conductive layer, the second ferromagnetic layer, and the bias layer are deposited in that order.

Abstract: A magnetic head using magneto-resistive effect includes a spin-valve type giantmagneto-resistive effect element or tunnel-typemagneto-resistive effect element type lamination layer structure portion in which a free layer 4 made of a soft magnetic material of which the magnetization is rotated in response to an external magnetic field, a fixed layer 6 made of a ferromagnetic material, an antiferromagnetic layer 7 for fixing the magnetization of this fixed layer 6 and a spacer layer 5, i.e., nonmagnetic conductive layer or a tunnel barrier layer are laminated with each other.

Abstract: A spin-valve thin-film element includes a substrate, an antiferromagnetic layer formed on the substrate, a pinned magnetic layer formed on the antiferromagnetic layer, a nonmagnetic conductive layer formed on the pinned magnetic layer, a free magnetic layer formed on the nonmagnetic conductive layer, a hard biasing layer, a conductive layer for supplying a detecting current to the pinned magnetic layer, the nonmagnetic conductive layer, and the free magnetic layer, a biasing conductive layer for controlling the direction of a variable magnetization of the free magnetic layer, and a current supply unit for supplying a current to the conductive layer and the biasing conductive layer. The current applied to the biasing conductive layer forms a current magnetic field for controlling the direction of the variable magnetization of the free magnetic layer. The spin-valve thin-film element exhibits high heat resistance, high reliability, and small asymmetry.