Abstract: According to one embodiment, a sensor includes a detection device and a circuit portion. The detection device includes a first detection portion and a second detection portion. The first detection portion includes a first detection element. The first detection element includes a first conductive member and a first detection member. The second detection portion includes a second detection element. The second detection element includes a second conductive member and a second detection member. The circuit portion is configured to execute a first detection portion operation for outputting a first detection result corresponding to a first detection value based on the first detection member when a first current is supplied to the first conductive member. In a case where a first evaluation value is not within a first range, the circuit portion is configured to execute a second detection portion operation by the second detection portion.

Abstract: According to one embodiment, a sensor includes a detection device, a switch circuit, and a detection circuit. The detection device includes a first detection section and a second detection section. The first detection section includes a first detection element. The first detection element includes a first conductive member and a first resistance member. The second detection section includes a second detection element. The second detection element includes a second conductive member and a second resistance member. In a first operation, the switch circuit is configured to supply a first current to the first conductive member and not to supply the first current to the second conductive member, and the detection circuit is configured to output a first signal corresponding to a difference between a first electrical resistance of the first resistance member and a second electrical resistance of the second resistance member.

Abstract: According to one embodiment, a sensor includes an element part. The element part includes a base body, a first detection support part fixed to the base body, a first detection connection part including a first connection resistance layer and supported by the first detection support part, a first support part fixed to the base body, a first structure body, a first connection part, and a film part. The first structure body includes a first end part and a first other end part. The first end part is supported by the first support part. The first connection part is supported by the first other end part. The film part includes a first detection part and a first part. The first detection part is supported by the first detection connection part. The first part is supported by the first connection part. The film part includes a film part resistance layer.

Abstract: According to one embodiment, a MEMS element includes a base body, a supporter, a film part, a first electrode, a second electrode, and an insulating member. The supporter is fixed to the base body. The film part is separated from the base body in a first direction and supported by the supporter. The first electrode is fixed to the base body and provided between the base body and the film part. The second electrode is fixed to the film part and provided between the first electrode and the film part. The insulating member includes a first insulating region and a second insulating region. The first insulating region is provided between the first electrode and the second electrode. A first gap is provided between the first insulating region and the second electrode. The second insulating region does not overlap the first electrode in the first direction.

Abstract: According to one embodiment, a pressure sensor includes a base body, a supporter, a film part, a first electrode, and a second electrode. The supporter is fixed to the base body. The film part is separated from the base body. The film part includes first, second, and third partial regions, and a rim portion. The rim portion is supported by the supporter. The second partial region is between the first partial region and the rim portion. The third partial region is between the second partial region and the rim portion. The first electrode is provided between the base body and the first partial region and between the base body and the second partial region. The first electrode is fixed to the base body. The second electrode is provided between the first electrode and the first partial region and between the first electrode and the second partial region.

Abstract: According to one embodiment, a MEMS element includes a base body, a supporter, a film part, a first electrode, a second electrode, and an insulating member. The supporter is fixed to the base body. The film part is separated from the base body in a first direction and supported by the supporter. The first electrode is fixed to the base body and provided between the base body and the film part. The second electrode is fixed to the film part and provided between the first electrode and the film part. The insulating member includes a first insulating region and a second insulating region. The first insulating region is provided between the first electrode and the second electrode. A first gap is provided between the first insulating region and the second electrode. The second insulating region does not overlap the first electrode in the first direction.

Abstract: According to one embodiment, a pressure sensor includes a base body, a supporter, a film part, a first electrode, and a second electrode. The supporter is fixed to the base body. The film part is separated from the base body. The film part includes first, second, and third partial regions, and a rim portion. The rim portion is supported by the supporter. The second partial region is between the first partial region and the rim portion. The third partial region is between the second partial region and the rim portion. The first electrode is provided between the base body and the first partial region and between the base body and the second partial region. The first electrode is fixed to the base body. The second electrode is provided between the first electrode and the first partial region and between the first electrode and the second partial region.

Abstract: According to one embodiment, a pressure sensor is disclosed. The pressure sensor includes a substrate, and a first capacitor element. The first capacitor element includes a lower electrode provided on the substrate, an upper electrode disposed above the lower electrode, and a film provided over the lower electrode and upper electrode. The lower electrode and the upper electrode are between the substrate and the film. An absolute value of an amount of change in an electrostatic capacitance between the lower electrode and the upper electrode with respect to unit change in an ambient temperature of the first capacitor element is substantially zero.

Abstract: According to one embodiment, a pressure sensor is disclosed. The pressure sensor includes a substrate, and a first capacitor element. The first capacitor element includes a lower electrode provided on the substrate, an upper electrode disposed above the lower electrode, and a film provided over the lower electrode and upper electrode. The lower electrode and the upper electrode are between the substrate and the film. An absolute value of an amount of change in an electrostatic capacitance between the lower electrode and the upper electrode with respect to unit change in an ambient temperature of the first capacitor element is substantially zero.

Abstract: According to one embodiment, a MEMS device is disclosed. The MEMS device includes a substrate, and a MEMS vibrator provided on the substrate. The MEMS vibrator includes a first vibration portion disposed above the substrate, and a control electrode to control a vibration property of the first vibration portion. The control electrode is disposed without contacting the first vibration portion.

Abstract: According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a first electrode fixed on the substrate. The first electrode includes a first one end portion and a first other end portion. A capacitor insulating film is provided on the first electrode. An insulating film is provided on the substrate and located around a periphery of the first electrode. A second electrode is provided above the first electrode and movable. The second electrode includes a second one end portion corresponding to the first one end portion, and a second other end portion corresponding to the first other end portion. The second one end portion extends outside the first one end portion and includes a first bent portion bent downward.

Abstract: According to one embodiment, a variable capacitance bank device, including a plurality of capacitor banks for generation of a variable capacitance, the plurality of capacitor banks being connected parallel with each other. each of the capacitor banks being constituted by serially connecting a fixed capacitor for generation of a fixed capacitance and a MEMS capacitor for generation of the variable capacitance. capacitances of the fixed capacitors in different capacitor banks being set at different values. capacitances of the MEMS capacitors in different capacitor banks being set at an equal value.

Abstract: According to one embodiment, an electronic device includes a variable capacitor includes first and second electrodes, and indicating a first state in which a distance between the first and second electrodes is a first distance and a second state in which the distance between the first and second electrodes is a second distance shorter than the first distance, in accordance with a voltage applied between the first and second electrodes, a voltage applying circuit applying a voltage between the first and second electrodes, and a voltage detecting circuit detecting a first voltage based on an interelectrode voltage between the first and second electrodes. The variable capacitor, the voltage applying circuit and the voltage detecting circuit are provided in a same chip.

Abstract: According to an embodiment of the present invention, a MEMS element includes: a semiconductor substrate; an island insulating layer formed on the substrate, the insulating layer including an air gap layer having an air gap group, the air gap group including a plurality of air gaps disposed in an in-plane direction; and a MEMS capacitor formed above the air gap group on the insulating layer.