Abstract: An insulating film is prepared by oxidizing an amorphous silicon layer containing boron or boron and germanium. The amorphous silicon layer is partially oxidized inwardly from the surface of the amorphous silicon layer to form the insulating film, while the unoxidized portion of the amorphous silicon layer is used as a conductive layer. The amorphous silicon layer may contain boron or boron and an element of Group IV, for example germanium. The insulating film is utilized to fabricate a bipolar transistor.

Abstract: In a method of pattern formation according to this invention, an organic polymer resist material is simultaneously used with an inorganic resist material, i.e., a first desired pattern consisting of the organic polymer resist material layer is formed on a substrate material, then the whole surface thereof is covered with the inorganic resist material layer, a second desired pattern is then formed with the inorganic resist material layer, and then the resulting second desired pattern is transferred to the organic polymer resist material. According to the invention, mask alignment can automatically be effected by detecting reflected light from an alignment mark on the substrate, formation of a relief including large and small patterns is also easily carried out, throughput can also be increased. The method of the invention may be combined with various process steps, so that such combined method is applicable for deep and shallow etching, formation of an interlayer insulation film, and lift-off method.

Abstract: A base region and a collector region of a bipolar transistor are interconnected through a hetero junction and forbidden band gap of the collector region is larger than that of the base region. When the transistor is made of a silicon base material, the collector region is made of oxygen containing polycrystalline silicon or amorphous silicon, whereas when made of a GaAs base alloy, the collector region is made of a mixed crystal of GaAs-AlAs.

Abstract: A method for fabricating semiconductor devices comprising the steps of: forming on the main surface of a semiconductor substrate an inorganic photoresist layer having a first amorphous layer, which contains Se as a matrix component and includes an impurity for providing one conductivity type and a second silver, or a silver containing layer, formed on the first layer; exposing the inorganic photoresist layer with an exposure pattern; developing the exposed inorganic photoresist layer to form a patterned impurity containing inorganic photoresist layer as an impurity source layer; forming a heat resistive overcoating layer on the main surface of the semiconductor substrate, while covering the impurity source layer; and forming a doped region by diffusing impurity from the impurity source layer into a region of the substrate underlying the impurity source layer.

Abstract: A photo-electric converting apparatus comprises an array wherein a plurality of photo-electric converting elements are provided, each of which having a semiconductor film layer arranged between an electrode layer and another electrode layer formed on a substrate, and having at least either a rectifying contact or a P-N junction. When the array is irradiated with light under such condition that substantially no bias voltage is applied between the electrode layers of the array, each of the photo-electric converting elements produces forward e.m.f., and forward current flows. A capacitive means in each of the photo-electric converting elements is charged with the forward current, and the capacitive means are discharged successively by scanning pulses, and timed pulse signals are outputted. The present invention discloses further various concrete constructions of the photo-electric converting element and the array thereof with high efficiency of conversion.

Abstract: This invention relates to a pattern-forming process using a radiation sensitive chalcogenide layer composed of a laminate of amorphous chalcogenide layer (2) and thin silver layer (3), and discloses a pattern-forming process characterized by etching out an amorphous chalcogenide layer (22) not doped with silver at an unexposed area under an irradiation of a light (6) or an accelerated corpuscular beam by a plasma etching with a fluorine-series gas and also a pattern-forming process wherein silver-doped amorphous chalcogenide layer (21) left on the substrate according to a given pattern by the above process is used as an etching mask and then the substrate layer (1c) is etched out by a plasma etching to form the given pattern on the substrate.

Abstract: The invention discloses a light modulator comprising a semiconductor substrate, a curved thin-film semiconductor optical waveguide having a predetermined curvature and, semiconductor electrode layers formed contiguous to the waveguide, whereby when a potential is applied across the electrode layers, the carrier density in the regions adjacent the waveguide may be varied and consequently the radiation loss in the curved waveguide may be varied accordingly to modulate light radiating through the waveguide in response to the electric potential applied across the electrode layers.

Abstract: The impurity concentration distribution of the layers of a multilayer junction diode is varied such that the concentration in a first region contiguous to the junction is low, in a second region is high, in a third region is low and in a last region gradually increases in the direction away from the junction.

Abstract: A pattern-forming material comprises a substrate and a radiation sensitive chalcogenide layer disposed thereon. The radiation sensitive chalcogenide layer consists of an amorphous layer having a chemical composition of 75 to 95 mol% of selenium and 5 to 25 mol% of germanium and a silver layer superimposed thereon. The pattern-forming materials having the radiation sensitive chalcogenide layer of the invention are particularly useful in lithographic applications.